A method for fabricating an optically transparent conductor including depositing a plurality of metal nanowires on a substrate, annealing or illuminating the plurality of metal nanowires to thermally or optically fuse nanowire junctions between metal nanowires to form a metal nanowire network, disposing a graphene layer over the metal nanowire network to form a nanohybrid layer comprising the graphene layer and the metal nanowire network, depositing a dielectric passivation layer over the nanohybrid layer, patterning the dielectric passivation layer using lithography, printing, or any other method of patterning to define an area for the optically transparent conductor, and etching the patterned dielectric passivation layer to define the optically transparent conductor.

An optical device for detecting a first chemical species and a second chemical species contained in a specimen, which includes: a first optical sensor, which may be optically coupled to an optical source through the specimen and is sensitive to radiation having a wavelength comprised in a first range of wavelengths; and a second optical sensor, which may be optically coupled to the optical source through the specimen and is sensitive to radiation having a wavelength comprised in a second range of wavelengths, different from the first range of wavelengths.

The detection device comprises a cold finger which performs thermal connection between a detector fitted on a cooling plate and a cooling system. The cold finger comprises at least one side wall at least partially formed by an area made from the hafnium-based amorphous metal alloy. Advantageously, the whole of the cold finger is made from the hafnium-based amorphous metal alloy.

A method produces a light-receiving device by growing a light-receiving layer having an undoped multi-quantum well structure; growing a cap layer on the light-receiving layer while the cap layer is doped with a p-type impurity during its growth; growing a mesa structure; growing a protective film on surfaces of the mesa structure; and annealing to form a p-n junction. The mesa structure is defined by a surrounding trench. Alternatively, a selective growth mask can be formed on the light-receiving layer whereafter the cap layer is grown on the light-receiving layer by use of the mask. In the alternative, the p-n junction is formed by diffusing p-type impurity from a p-type contact layer of the cap layer through a concentration adjusting layer thereof to the light-receiving layer.

The present application relates generally to light emitting diodes and photodetectors as well as their methods of manufacture and use. In one exemplary embodiment, an integrated device may include a substrate, a light emitting diode formed on the substrate, and a photodetector formed on the substrate. In another embodiment, a device may include a light emitting diode formed on a substrate, and the light emitting diode may act as both a solid state light and as an optical transmitter.

A low noise infrared photodetector has an epitaxial heterostructure that includes a photodiode and a transistor. The photodiode includes a high sensitivity narrow bandgap photodetector layer of first conductivity type, and a collection well of second conductivity type in contact with the photodetector layer. The transistor includes the collection well, a transfer well of second conductivity type that is spaced from the collection well and the photodetector layer, and a region of first conductivity type between the collection and transfer wells. The collection well and the transfer well are of different depths, and are formed by a single diffusion.

An optical device for detecting a first chemical species and a second chemical species contained in a specimen, which includes: a first optical sensor, which may be optically coupled to an optical source through the specimen and is sensitive to radiation having a wavelength comprised in a first range of wavelengths; and a second optical sensor, which may be optically coupled to the optical source through the specimen and is sensitive to radiation having a wavelength comprised in a second range of wavelengths, different from the first range of wavelengths.

A transducer to convert optical energy to electrical energy. The transducer or photo-transducer has a base layer which has a group of connecting elements formed therein at separations which are increasing with the distance away from an emitter layer formed atop the base layer. The connecting elements separate and electrically connect the base layer into base segments, the base segments having increasing thicknesses with the distance away from the emitter layer. The photo-transducer generates an output voltage that is greater than the input light photovoltage. The photo-transducer output voltage is proportional to the number of connecting elements formed in the base layer.

An optoelectronic device includes an integrated circuit including electronic devices formed on a front side of a semiconductor substrate. A barrier layer is formed on a back side of the semiconductor substrate. A photonics layer is formed on the barrier layer. The photonics layer includes a core for transmission of light and a cladding layer encapsulating the core and including a different index of refraction than the core. The core is configured to couple light generated from a component of the optoelectronic device.

An optoelectronic device includes an integrated circuit including electronic devices formed on a front side of a semiconductor substrate. A barrier layer is formed on a back side of the semiconductor substrate. A photonics layer is formed on the barrier layer. The photonics layer includes a core for transmission of light and a cladding layer encapsulating the core and including a different index of refraction than the core. The core is configured to couple light generated from a component of the optoelectronic device.