An optical semiconductor element includes a substrate and a plurality of cells. Each cell includes an optical layer, a first semiconductor layer, and a second semiconductor layer. The plurality of cells include a first cell and a second cell. The second semiconductor layer of the first cell and the first semiconductor layer of the second cell are electrically connected to each other by a first connection portion of a first wiring portion. The first wiring portion has a first extending portion that extends from the first connection portion so as to surround four side portions of the optical layer of the first cell. The optical layer is an active layer that generates light having a central wavelength of 3 m or more and 10 m or less or an absorption layer having a maximum sensitivity wavelength of 3 m or more and 10 m or less.

Various embodiments of the present disclosure are directed towards an image sensor with a passivation layer for dark current reduction. A device layer overlies a substrate. Further, a cap layer overlies the device layer. The cap and device layers and the substrate are semiconductor materials, and the device layer has a smaller bandgap than the cap layer and the substrate. For example, the cap layer and the substrate may be silicon, whereas the device layer may be or comprise germanium. A photodetector is in the device and cap layers, and the passivation layer overlies the cap layer. The passivation layer comprises a high k dielectric material and induces formation of a dipole moment along a top surface of the cap layer.

Various embodiments of the present disclosure are directed towards an image sensor with a passivation layer for dark current reduction. A device layer overlies a substrate. Further, a cap layer overlies the device layer. The cap and device layers and the substrate are semiconductor materials, and the device layer has a smaller bandgap than the cap layer and the substrate. For example, the cap layer and the substrate may be silicon, whereas the device layer may be or comprise germanium. A photodetector is in the device and cap layers, and the passivation layer overlies the cap layer. The passivation layer comprises a high k dielectric material and induces formation of a dipole moment along a top surface of the cap layer.

Provided is a semiconductor device that can suppress a leakage current more than has been achieved before. A semiconductor device 22 includes a first carrier holding layer 48, which is arranged on a lower electrode 47, is in contact with a lower electrode 47 via a first interface 49, and includes majority carriers of one type, and a second carrier holding layer 57, which is arranged on the first carrier holding layer 48, defines a second interface 58 constituting a conduction path to the first carrier holding layer 48, and includes majority carriers of the other type. The first interface 49 has its outline within the outline of the first carrier holding layer 48 when seen in a plan view in a direction that is orthogonal to a surface of the substrate, and the second interface 58 has its outline within the outline of the first carrier holding layer 48 when seen in the plan view.

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

According to one embodiment, a detection device includes a substrate, a photoelectric conversion element provided on the substrate and including a semiconductor layer, a transistor provided to correspond to the photoelectric conversion element, and a green color filter provided above the photoelectric conversion element.

The present disclosure provides an image sensor panel and a method for capturing graphical information using the image sensor panel. In one aspect, the image sensor panel includes a substrate and a sensor array on the substrate, the sensor array including a plurality of photosensitive pixels. The substrate includes a first region defined by the sensor array and a second region other than the first region. The second region is optically transparent and has an area greater than that of the first region.

A plurality of holes in a top surface of a silicon medium form a plurality of sub-meta lenses to result in multiple focal points rather than a single point (resulting from using a single meta lens). As a result, optical paths for incoming light are reduced as compared with a single optical path associated with a single meta lens, which in turn reduces angular response of incident photons. Thus, a pixel sensor including the plurality of sub-meta lenses experiences improved light focus and greater signal-to-noise ratio. Additionally, dimensions of the pixel sensor are reduced (particularly a height of the pixel sensor), which allows for greater miniaturization of an image sensor that includes the pixel sensor.

According to an aspect, a detection device includes: a substrate; photoelectric conversion elements arranged on the substrate; transistors that each include a semiconductor layer and a gate electrode facing the semiconductor layer and are provided for each photoelectric conversion element; and a first electrode and a second electrode that are provided between the substrate and the photoelectric conversion elements in a direction orthogonal to the substrate and face each other with an insulating film interposed therebetween. The first electrode includes main parts that overlap the respective photoelectric conversion elements and a coupling part couples together adjacent main parts of the main parts. The second electrode is formed to have an island pattern for each photoelectric conversion element. The first electrode is located in the same layer as that of the gate electrode. The second electrode is located in the same layer as that of the semiconductor layer.

A diode comprising a light-sensitive germanium region which is totally embedded in silicon and forms with the silicon a lower interface and lateral interfaces, wherein the lateral interfaces do not extend perpendicularly, but obliquely to the lower interface and therefore produce a faceted form.