A semiconductor device includes a first semiconductor layer; an insulation member layer formed on the first semiconductor layer; a transistor disposed in an upper portion of the insulation member layer; a first interlayer insulation film covering the transistor; a layered member including a wiring layer formed on the first interlayer insulation film and a second interlayer insulation film; and a first penetrating electrode penetrating through the insulation member layer, the first interlayer insulation film, and the layered member. The first penetrating electrode is electrically connected only to the first semiconductor layer.

The present invention provides a radiation detector UBM electrode structure body and a radiation detector which suppress the degradation of metal electrode layers at the time of formation of UBM layers and achieve sufficient electric characteristics, and a method of manufacturing the same. A radiation detector UBM electrode structure body according to the present invention includes a substrate made of CdTe or CdZnTe, comprising a Pt or Au electrode layer formed on the substrate by electroless plating, an Ni layer formed on the Pt or Au electrode layer by sputtering, and an Au layer formed on the Ni layer by sputtering.

A semiconductor device includes a first semiconductor layer of a first conductivity type having a primary surface on one side thereof and a secondary surface on an opposite side thereof, and having a sensor therein, a second semiconductor layer of a second conductivity type having a circuit element formed therein, the second semiconductor layer being formed at said one side of the primary surface of the first semiconductor layer, an insulating layer formed between the first semiconductor layer and the second semiconductor layer, and being disposed on the primary surface of the first semiconductor layer, and a charge-attracting semiconductor layer of the first conductivity type configured to attract electrical charges generated in the insulating layer when a fixed voltage is supplied to the charge-attracting semiconductor layer.

The disclosure is directed at a method and apparatus for producing a detector element. The detector element includes first and second electrodes located on opposites sides of a semiconductor layer. The first and second electrodes are staggered with respect to each other in a plane perpendicular to the semiconductor layer.

Provided is a detector that includes a scintillator, a common electrode, a pixel electrode, and a plurality of insulating layers, with a plurality of nano-pillars formed in the plurality of insulating layers, a nano-scale well structure between adjacent nano-pillars, with a-Se separating the adjacent nano-pillars, and a method for operation thereof.

A radiographic imaging control device is provided with a radiation detector, amplifiers and a controller. A plurality of pixels are arrayed in the radiation detector, each pixel including a sensor portion that generates charges in accordance with irradiated radiation and a switching element that is for reading out the charges generated at the sensor portion. Each amplifier is provided in correspondence with a respective pixel of the radiation detector, is equipped with a resetter that resets charges remaining at an integration capacitor, and amplifies an electronic signal according to the charges read out by the switching element from the corresponding pixel by a pre-specified amplification factor. In accordance with pre-specified conditions, the controller controls so as to alter a bias current supplied to the amplifiers in at least some periods of resetting by the resetter.

A semiconductor device includes a first semiconductor layer of a first conductivity type having a primary surface and having a sensor therein, a second semiconductor layer of a second conductivity type having a circuit element formed therein. The second semiconductor layer is formed at a same side of the primary surface of the first semiconductor layer. The device further includes an insulating layer formed between the first semiconductor layer and the second semiconductor layer. The insulating layer is disposed on the primary surface of the first semiconductor layer and surrounds the circuit element, and includes a charge-attracting semiconductor pattern of the first conductivity type that is disposed near the circuit element so as to attract electrical charges generated in the insulating layer.

The present invention provides an invisible light flat plate detector and a manufacturing method thereof, an imaging apparatus, relates to the field of detection technology, can solve problems that the structure of the invisible light flat plate detector in the prior art is complex and the manufacturing method thereof is tedious. The invisible light flat plate detector of the present invention comprises a plurality of detection units and an invisible light conversion layer provided above the detection units for converting invisible light into visible light, each of the detection units comprising a thin film transistor provided on a substrate, and a first insulation layer, a first electrode, a semiconductor photoelectronic conversion module, a second electrode which are successively provided above the thin film transistor and of which projections on the substrate at least partially overlap with a projection of the thin film transistor on the substrate.

The present application discloses a photodetector substrate comprising an array of a plurality of first electrodes; an array of a plurality of second electrodes, and an insulating block. The plurality of first electrodes and the plurality of second electrode are alternately arranged along a first direction, the plurality of first electrodes are disposed spaced apart from the plurality of second electrodes on a same layer; and the insulating block spaces apart at least a pair of adjacent first electrode and second electrode.

The present disclosure relates to an array substrate for an X-ray detector and an X-ray detector including the same. The array substrate is defined as an active area and a pad area, wherein the pad area comprises a plurality of test areas comprising a first test pattern and a second test pattern, the first test pattern comprises a first gate electrode on a substrate, a first active layer on the first gate electrode, a first source/drain electrode on the first active layer, and a first data line on the first source/drain electrode, and the second test pattern comprises a first lower electrode on the substrate, a first photoconductive layer on the first lower electrode, and a first upper electrode on the first photoconductive layer, thereby measuring the characteristic of each of a transistor and an optical detector with high accuracy.