An imaging device of an embodiment of the present disclosure includes a semiconductor substrate, multiple first pixels, and multiple second pixels. The semiconductor substrate includes a first surface and a second surface that are opposed to each other, and includes a pixel array unit in which multiple unit pixels are arranged in a matrix. The multiple first pixels are each provided in corresponding one of the multiple unit pixels. The multiple second pixels are each provided in corresponding one of the multiple unit pixels and convert a smaller amount of charge per unit time than the multiple first pixels. The multiple second pixels are each disposed in corresponding one of the unit pixels to allow the multiple second pixels to be equal to each other in distance from a center of the pixel array unit, on the basis of respective positions, in the pixel array unit, of the multiple unit pixels in which the respective second pixels are provided, in a planar view.

A detection device includes: a substrate; photoelectric conversion elements provided to the substrate; transistors; and signal lines each of which is between adjacent photoelectric conversion elements. Each detection element includes one of the photoelectric conversion element and the transistors adjacent to the photoelectric conversion element. A first signal line among the signal lines is between the photoelectric conversion element of a first detection element and the photoelectric conversion element of a second detection element adjacent to one side of the first detection element and is coupled to the first detection element and the second detection element. A second signal line among the signal lines is between the photoelectric conversion element of the first detection element and the photoelectric conversion element of a third detection element adjacent to another side of the first detection element and is coupled to the first detection element and the third detection element.

A light-receiving device of an embodiment of the disclosure includes: a semiconductor substrate including a light-receiving region with light-receiving elements arranged two-dimensionally in matrix, and a peripheral region provided therearound; a first first electrically-conductive region provided at an interface of a first surface of the semiconductor substrate for each element and coupled to a first electrode, in the light-receiving region; a second first electrically-conductive region provided around the first first region provided for each element and coupled to a second electrode, at the interface; a third first electrically-conductive region provided around the second first region provided for each element and having electrically floating state, at the interface;

a fourth first electrically-conductive region provided at the interface around the light-receiving region and having electrically floating state, in the peripheral region; and a first second electrically-conductive region embeddedly formed in the semiconductor substrate and facing the second, third, and fourth first regions.

Disclosed are image sensors and methods of fabricating the same. The image sensor includes a semiconductor substrate including a pixel zone and a pad zone and having a first surface and a second surface opposing each other, a first pad separation pattern on the pad zone and extending from the first surface of the semiconductor substrate toward the second surface of the semiconductor substrate, a second pad separation pattern extending from the second surface toward the first surface of the semiconductor substrate on the pad zone the second pad and in contact with the first pad separation pattern, and a pixel separation pattern on the pixel zone and extending from the second surface of the semiconductor substrate toward the first surface of the semiconductor substrate.

A radiation detector for position-resolved detection of radiation comprises at least one sensor tile with sensor material sensitive to the radiation. The sensor tile defines a horizontal plane spanned by a first axis and a second axis orthogonal to the first axis. A set of sensor pixels of electrically conductive material is arranged in the horizontal plane and in contact with the sensor material. The set comprises a subset of inner sensor pixels, wherein an inner sensor pixel has a neighbor sensor pixel in each direction of the first axis and the second axis. At least two neighboring inner sensor pixels of the subset show an extension along the second axis that exceeds an extension along the first axis. The radiation detector further comprises at least one readout chip assigned to the at least one sensor tile and extending along the first axis and the second axis.

The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a substrate and a transfer gate disposed from a front-side surface of the substrate. The CMOS image sensor further comprises a photo detecting column disposed at one side of the transfer gate within the substrate. The photo detecting column comprises a doped sensing layer comprising one or more recessed portions along a circumference of the doped sensing layer in parallel to the front-side surface of the substrate. By forming the photo detecting column with recessed portions, a junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.

Some embodiments relate to an integrated circuit light sensor device. The integrated circuit light sensor device includes a semiconductor substrate, as well as a plurality of first light-absorption regions and a plurality of second light-absorption regions located in the semiconductor substrate. Each of the first light-absorption regions includes an implantation region of the semiconductor substrate. The implantation region and the semiconductor substrate form at least a portion of a corresponding one of a plurality of first photodetectors for a first light wavelength band. Each of the second light-absorption regions includes a semiconductor material different from the semiconductor substrate. The semiconductor material forms at least a portion of a corresponding one of a plurality of second photodetectors for a second light wavelength band different from the first light wavelength band.

A pattern recognition substrate and a display device are disclosed, the pattern recognition substrate includes: a base substrate; a photosensitive device arranged on the base substrate and including a first electrode, a photoelectric conversion layer and a second electrode that are stacked, where the photoelectric conversion layer includes an I-type semiconductor layer with a thickness enough to convert a part of fingerprint-reflected light to an electrical signal, the first electrode includes a light-transmitting region transmitting the fingerprint-reflected light which is converted by the photoelectric conversion layer; and a light absorbing layer arranged between the base substrate and a layer where the photosensitive device is located to absorb the fingerprint-reflected light not converted by the photoelectric conversion layer.

An electromagnetic wave detector includes: a semiconductor layer in which a step is formed, the semiconductor layer having sensitivity to a detection wavelength; an insulating film disposed on the step and provided with an opening through which a part of the step is exposed; a two-dimensional material layer disposed on the insulating film and the opening, the two-dimensional material layer including a connection region electrically connected to the semiconductor layer in the opening; a first electrode disposed on the insulating film and electrically connected to the two-dimensional material layer; and a second electrode disposed on the semiconductor layer and electrically connected to the first electrode through the connection region of the two-dimensional material layer.

The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a substrate having a pixel region arranged between one or more trenches formed by sidewalls of the substrate. One or more dielectric materials are arranged along the sidewalls of the substrate forming the one or more trenches. A conductive material is disposed within the one or more trenches. The conductive material is electrically coupled to an interconnect disposed within a dielectric arranged on the substrate.