An optical device and a method of fabricating the same are disclosed. The optical device includes a first die layer and a second die layer. The first die layer includes a first substrate having a first surface and a second surface opposite to the first surface, first and second pixel structures, an inter-pixel isolation structure disposed in the first substrate and surrounding the first and second pixel structures, and a floating diffusion region disposed in the first substrate and between the first and second pixel structures. The second die layer includes a second substrate having a third surface and a fourth surface opposite to the third surface and a pixel transistor group disposed on the third surface of the second substrate and electrically connected to the first and second pixel structures.

An image sensor includes a substrate that includes a plurality of pixel areas, where the substrate includes a first surface and a second surface that are opposite to each other; and a device isolation pattern that extends from the first surface and into the substrate, where the device isolation pattern is between the plurality of pixel areas, where the device isolation pattern includes an intervening region, a crossing region, a first device isolation portion, and a second device isolation portion, where the intervening region includes: a first dielectric pattern; a conductive liner; and a second dielectric pattern, where the first dielectric pattern extends from the first device isolation portion and toward the second device isolation portion, and where the first device isolation portion includes the conductive liner and the second dielectric pattern.

An image sensor includes a substrate that includes a first surface and a second surface that are opposite to each other, where the substrate includes a plurality of pixel areas; an isolation pattern that extends from the first surface and into the substrate, where the isolation pattern is between the plurality of pixel areas; and an antireflection layer on the isolation pattern, where the isolation pattern includes: a first device isolation pattern that contacts the antireflection layer; and a second device isolation pattern that is spaced apart from the antireflection layer, where the first device isolation pattern includes: a first dielectric layer; and a conductive reflection layer on the first dielectric layer, and where a top surface of the conductive reflection layer and a top surface of the first dielectric layer extend from the second surface of the substrate by a same distance.

An image sensor includes a first sub-pixel group including a plurality of first unit pixels, a first color filter, a first micro lens at least partially overlapping the plurality of first unit pixels, a second sub-pixel group including a plurality of second unit pixels, a second color filter, a second micro lens at least partially overlapping the plurality of second unit pixels, a third sub-pixel group including a plurality of third unit pixels, a third color filter, a third micro lens at least partially overlapping the plurality of third unit pixels, a first dead zone in which the first micro lens does not overlap the first sub-pixel group, a second dead zone in which the second micro lens does not overlap the second sub-pixel group, and a third dead zone in which the third micro lens does not overlap the third sub-pixel group.

An image sensor is provided. The image sensor includes a semiconductor substrate including a first surface, and a second surface opposite to the first surface, the semiconductor substrate further including a photoelectric conversion region; a transmission gate disposed on the first surface of the semiconductor substrate; a buried insulation layer disposed on the first surface of the semiconductor substrate to cover the transmission gate; and a pixel isolation structure disposed in a pixel isolation trench, the pixel isolation trench extending toward the second surface of the semiconductor substrate from the first surface of the semiconductor substrate and passing through the buried insulation layer, the pixel isolation structure defining a plurality of pixels in the semiconductor substrate, a portion of the pixel isolation structure being covered by the buried insulation layer.

An image sensor structure including an image stack disposed over a device stack. The image stack includes a plurality of light detectors. A first optical filter stack is disposed over the image stack. The first optical filter stack includes a light guide layer. Light pipe cavities are disposed in the light guide layer. Each light pipe cavity is associated with a light detector. Each light pipe cavity has an aspect ratio that is greater than about 2.5 to about 1. A nanowell layer is disposed over the first optical filter stack. Nanowells are disposed in the nanowell layer. Each nanowell is associated with a light detector.

Improvement of pixel characteristics is achieved. A light detecting device includes a semiconductor layer and first and second separation areas disposed in the semiconductor layer. The first separation area includes an insulating film that fills a first dug part extending in a thickness direction of the semiconductor layer and of which a refractive index is lower than that of the semiconductor layer, and the second separation area includes a conductive film filling a second dug part extending in the thickness direction of the semiconductor layer.

Image sensors are provided. The image sensors may include a plurality of unit pixels and a color filter array on the plurality of unit pixels. The color filter array may include a color filter unit including four color filters that are arranged in a two-by-two array, and the color filter unit may include two yellow color filters, a cyan color filter, and one of a red color filter or a green color filter.

An image sensor includes: a semiconductor substrate including a first surface and a second surface opposite to each other; a buried transfer gate electrode arranged in a transfer gate trench extending from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the buried transfer gate electrode has an upper surface arranged at a level lower than that of the first surface of the semiconductor substrate with respect to the second surface of the semiconductor substrate; and a transfer gate spacer arranged on an upper sidewall of the transfer gate trench and on the buried transfer gate electrode.

Disclosed are image sensors and methods of fabricating the same. The image sensor includes a semiconductor substrate including a pixel zone and a pad zone and having a first surface and a second surface opposing each other, a first pad separation pattern on the pad zone and extending from the first surface of the semiconductor substrate toward the second surface of the semiconductor substrate, a second pad separation pattern extending from the second surface toward the first surface of the semiconductor substrate on the pad zone the second pad and in contact with the first pad separation pattern, and a pixel separation pattern on the pixel zone and extending from the second surface of the semiconductor substrate toward the first surface of the semiconductor substrate.