A semiconductor device, a manufacturing method therefor, and an electronic apparatus that reduces a parasitic capacitance generated between an internal electrode and a board silicon to suppress waveform distortion and signal delay of high-frequency signals, thereby enabling a high-speed operation. A configuration to include: a board silicon; a silicon oxide film stacked on the board silicon; an inter-wiring-layer film having an internal electrode stacked on the silicon oxide film; a through-hole forming a stepped hole with a larger-diameter hole extending from the board silicon to the silicon oxide film and a smaller-diameter hole extending from the silicon oxide film to the internal electrode; an interlayer dielectric film stacked on a circumferential side surface of the larger-diameter hole and the board silicon; and a redistribution layer on an inner peripheral surface of the through-hole and the interlayer dielectric film and connected to the internal electrode.

Circuitry is provided that includes a first die, a second die, and a third die that are vertically stacked. The second die may have a front side facing the third die and a back side facing the first die. The first die can include a plurality of single-photon avalanche diodes (SPADs). The second die can include a plurality of switches coupled to cathode terminals of the plurality of SPADs in the first die. The third die can include digital readout logic coupled to the plurality of switches in the second die. The plurality of switches in the second die can be power using a high voltage and are sometimes referred to as analog high voltage switches. The digital readout logic in the third die can be power using a voltage that is lower than the high voltage being used to power the second die.

A photoelectric conversion device includes first and second semiconductor components. A semiconductor layer of the first semiconductor component includes a pixel array unit. First and second elements are included in a semiconductor layer different from the first semiconductor layer. At a bonding surface, first and second insulating films are bonded, and first and second metal portions are bonded. A first pixel generating a signal corresponding to brightness and the first element are connected through the first metal portion. A second pixel generating an event signal and the second element are connected through a second metal portion. A first conductor included in a first electrical path and positioned in a predetermined layer between first and fourth surfaces is provided, and a second conductor included in a second electrical path and positioned in the predetermined layer is provided. The first and second conductors are different in size.

The present application discloses an optical semiconductor device. The optical semiconductor device includes a logic die including a core circuit area and a logic peripheral circuit area; a memory die positioned on the logic die and including a memory cell area and a memory peripheral area, and a first inter-die via positioned in the memory peripheral area and electrically connected to the logic peripheral circuit area; and a sensor die positioned on the memory die and including a sensor pixel area and a sensor peripheral area, a first intra-die via positioned in the sensor peripheral area and electrically coupled to the logic peripheral circuit area through the first inter-die via, and a second intra-die via positioned in the sensor peripheral area. A height of the first intra-die via is greater than a height of the second intra-die via.

To generate multiple types of images of the same subject, an electronic apparatus includes a drive control unit that controls the drive of an image sensor, a division unit that divides an image capture region of the image sensor into at least first and second regions, and an image generation unit that generates a first image by capturing an image of the same subject in the first region and generates a second image by capturing an image of the same subject in the second region.

A photoelectric conversion apparatus includes a pulse shaping circuit that shapes an output from a diode of avalanche amplification type into a pulse, and a pulse conversion circuit that converts a pulse signal output from the pulse shaping circuit. The pulse conversion circuit converts a pulse signal having a first amplitude and output from the pulse shaping circuit into a pulse signal having a second amplitude smaller than the first amplitude.

A semiconductor device capable of realizing a capacitative element of which a capacitance value has low bias dependence and of which capacitance density is high without lowering operating voltage is provided. The semiconductor device includes: a semiconductor substrate; a first capacitative element stacked on the semiconductor substrate; and a second capacitative element which is stacked on an opposite side to a side of the semiconductor substrate of the first capacitative element and of which a capacitance value has bias characteristics being opposite to bias characteristics of a capacitance value of the first capacitative element, wherein the first capacitative element and the second capacitative element are connected in parallel.

An electrode controls transmittance of a blocking layer over a photodiode of a pixel sensor (e.g., a photodiode of a small pixel detector) by changing oxidation of a metal material included in the blocking layer. By using the electrode to adjust transmittance of the blocking layer, pixel sensors for different uses and/or products may be produced using a single manufacturing process. As a result, power and processing resources are conserved that otherwise would have been expended in switching manufacturing processes. Additionally, production time is decreased (e.g., by eliminating downtime that would otherwise have been used to reconfigure fabrication machines.

A radiation detector for position-resolved detection of radiation comprises at least one sensor tile with sensor material sensitive to the radiation. The sensor tile defines a horizontal plane spanned by a first axis and a second axis orthogonal to the first axis. A set of sensor pixels of electrically conductive material is arranged in the horizontal plane and in contact with the sensor material. The set comprises a subset of inner sensor pixels, wherein an inner sensor pixel has a neighbor sensor pixel in each direction of the first axis and the second axis. At least two neighboring inner sensor pixels of the subset show an extension along the second axis that exceeds an extension along the first axis. The radiation detector further comprises at least one readout chip assigned to the at least one sensor tile and extending along the first axis and the second axis.

An imaging element includes a first substrate provided with a photoelectric conversion portion that photoelectrically converts light and generates charge, and a readout circuit that outputs a signal based on the charge generated by the photoelectric conversion portion, a second substrate laminated on the first substrate and provided with a processing portion that processes the signal output from the readout circuit, and a connection portion provided with a bent portion bending in a portion other than the vicinity of the first substrate and the second substrate, and electrically connecting the readout circuit to the processing portion.