Patent classifications
H10F71/1218
Semiconductor device including a strain relief buffer
A semiconductor device comprising a substrate having a region protruding from the substrate surface; a relaxed semiconductor disposed on the region; an additional semiconductor disposed on the relaxed semiconductor; and low density dielectric disposed next to and at least partially underneath the relaxed semiconductor and adjacent to the protruding region of the substrate.
METHOD FOR FORMING A STRAINED SEMICONDUCTOR LAYER INCLUDING REPLACING AN ETCHABLE MATERIAL FORMED UNDER THE STRAINED SEMICONDUCTOR LAYER WITH A DIELECTRIC LAYER
A semiconductor device comprising a substrate having a region protruding from the substrate surface; a relaxed semiconductor disposed on the region; an additional semiconductor disposed on the relaxed semiconductor; and low density dielectric disposed next to and at least partially underneath the relaxed semiconductor and adjacent to the protruding region of the substrate.
SEMICONDUCTOR DEVICE INCLUDING A STRAIN RELIEF BUFFER
A semiconductor device comprising a substrate having a region protruding from the substrate surface; a relaxed semiconductor disposed on the region; an additional semiconductor disposed on the relaxed semiconductor; and low density dielectric disposed next to and at least partially underneath the relaxed semiconductor and adjacent to the protruding region of the substrate.
Photoelectric conversion device and manufacturing method thereof
It is an object to reduce the region of a photoelectric conversion element which light does not reach, to suppress deterioration of power generation efficiency, and to suppress manufacturing cost of a voltage conversion element. The present invention relates to a transmissive photoelectric conversion device which includes a photoelectric conversion element including an n-type semiconductor layer, an intrinsic semiconductor layer, and a p-type semiconductor layer; a voltage conversion element which is overlapped with the photoelectric conversion element and which includes an oxide semiconductor film for a channel formation region; and a conductive element which electrically connects the photoelectric conversion element and the voltage conversion element. The photoelectric conversion element is a solar cell. The voltage conversion element includes a transistor having a channel formation region including an oxide semiconductor film. The voltage conversion element is a DC-DC converter.