A method of manufacturing a UV phototransistor and a UV transistor manufactured according to the same are disclosed herein. The method includes mixing a solvent comprising 2-methoxyethanol, 2-ethoxyethanol, and ethylene glycol with an oxide semiconductor to prepare a photoactive solution; applying the prepared photoactive solution onto a substrate to form a photoactive layer, and forming electrodes spaced apart on the photoactive layer.

A method for preparing TOPCon battery substrate and double-sided electroplated TOPcon battery prepared therefrom are provided. The method includes: providing a double-sided grooved silicon matrix of a TOPCon battery; carrying out thermal repair treatment on the silicon matrix; respectively carrying out light injection treatment on the front side and the back side of the silicon matrix after thermal repair treatment, thereby the TOPCon battery substrate is obtained. Thermal repair treatment can greatly increase the overall lattice thermal motion of the silicon substrate, and light is injected into the front side and the back side in the directions of two different light incidence surfaces, so that both the front side and the back side can absorb light, thereby repairing the defects at the interface between the amorphous silicon and the silicon wafer and improving the quality of the PN junctions.

A manufacturing method of a diode radiation sensor having a charge multiplication diode includes providing a substrate that is made of a semiconductor material and has a front surface and a rear surface; making, near the front surface, a first layer of a semiconductor material having a first type of doping; and making, deep in the substrate, a second layer of a semiconductor material having a second type of doping that is electrically opposite to the first type. The second layer is obtained by inserting into the substrate a first predetermined amount of a first type of dopant and a second predetermined amount of a second type of dopant.

Provided are a back-contact battery and a manufacturing method thereof, and a photovoltaic module, which includes a silicon substrate with a front surface and a back surface; a first semiconductor layer with a second semiconductor opening region arranged back surface; and a second semiconductor layer. The back-contact battery further includes multiple insulating layers arranged at intervals along an X-axis direction of the back surface, wherein the insulating layers are arranged on the outer surface of the second semiconductor layer. In the X-axis direction, the insulating layer spans a side-surface edge of the second semiconductor opening region with both ends extending, respectively; the insulating layer has a span length W12 on the second semiconductor opening region, and the insulating layer has a span length W11 on the first semiconductor layer, satisfying a condition: W12:W11=0.1-10:1.

A method of treatment of at least one cut solar cell, the method including steps of: providing the at least one solar cell, said cell having previously been subjected to a cutting process; and performing a carrier injection treatment on at least a cut edge of the cell.

The present disclosure provides a hybrid heterojunction solar cell, a cell component, and a preparation method, the hybrid heterojunction solar cell comprises a semiconductor substrate having a substrate front surface and a substrate back surface opposite to each other, wherein the substrate front surface is close to a light-facing side of the cell and the substrate back surface is close to a backlight side of the cell; at least two composite layers located on one side of the substrate front surface, each composite layer includes a multi-layer structure of a tunneling layer and a doped polysilicon layer sequentially arranged in a direction gradually away from the substrate front surface. The hybrid heterojunction solar cell, cell component and a preparation method provided by this disclosure can achieve a stable passivation effect on the cell surface, reduce light absorption in the non-metallic areas of the cell, and achieve better process control at the same time.

The present application discloses a solar cell, a solar cell module, and a method for manufacturing a solar cell. In one example, a solar cell includes a semiconductor substrate, an ultra-thin dielectric layer, a passivation layer, a first electrode, and metallic crystals. The semiconductor substrate has a light receiving surface and a back surface opposite to the light receiving surface. The ultra-thin dielectric layer is formed on at least one of the back surface and the light receiving surface of the semiconductor substrate. The passivation layer is formed on the ultra-thin dielectric layer. The first electrode is formed on the passivation layer. The metallic crystals are formed in the passivation layer. The metallic crystals include a first metallic crystal, where an end surface of the first metallic crystal abuts against the ultra-thin dielectric layer, and another end surface of the first metallic crystal is connected to the first electrode.

Provided are a back-contact battery and a manufacturing method thereof, and a photovoltaic module, which includes a silicon substrate with a front surface and a back surface; a first semiconductor layer with a second semiconductor opening region arranged back surface; and a second semiconductor layer. The back-contact battery further includes multiple insulating layers arranged at intervals along an X-axis direction of the back surface, wherein the insulating layers are arranged on the outer surface of the second semiconductor layer. In the X-axis direction, the insulating layer spans a side-surface edge of the second semiconductor opening region with both ends extending, respectively; the insulating layer has a span length W12 on the second semiconductor opening region, and the insulating layer has a span length W11 on the first semiconductor layer, satisfying a condition: W12:W11=0.1-10:1.

A sensor package comprises a first substrate and a second substrate. A first substrate sensor element is mounted on an inner surface of the first substrate and between the first substrate and the second substrate, and a second substrate sensor element is mounted on an inner surface of the second substrate and between the first substrate and the second substrate. A first side sensor element and a second side sensor element are mounted vertically between the first substrate and the second substrate, wherein the first and second side sensor elements have respective sensing areas facing away from each other and outwards of the sensor package, and wherein the first and second side sensor elements are electrically coupled to at least one of the first substrate and the second substrate. A first side clear mold and a second side clear mold are formed to cover the respective sensing areas of the first and second side sensor elements. An encapsulant layer is formed between the first substrate and the second substrate to encapsulate the first substrate sensor element, the second substrate sensor element and the first and second side sensor elements.

The present disclosure discloses a preparation method for a solar cell and a solar cell. The preparation method for a solar cell comprises: locally forming a tunnel silicon oxide layer and an N-type doped polysilicon layer on a front surface of a P-type silicon substrate, wherein the N-type doped polysilicon layer is stacked on the tunnel silicon oxide layer; immersing the P-type silicon substrate having the tunnel silicon oxide layer and the N-type doped polysilicon layer locally formed on the front surface into an electroplating solution, irradiating the front surface of the P-type silicon substrate with light for a set duration so as to grow a front metal electrode on the N-type doped polysilicon layer, and removing a metal remaining on the front surface of the P-type silicon substrate by etching, wherein the width of the front metal electrode is the same as the width of the N-type doped polysilicon layer. The preparation method may omit an alignment operation in a metal electrode preparation process, thereby effectively reducing a difficulty in a preparation process of a local passivated contact emitter.