A diode comprises a p-doped region, an n-doped region, and a light-sensitive intrinsic region sandwiched laterally between the p-doped region and the n-doped region in a direction transverse to a direction of light propagation in the diode. The p-doped region is made of a first material doped with a first type of dopant and the n-doped region is made of a third material doped with a second type of dopant. The first material includes Si or SiGe. The third material includes Si or SiGe. The intrinsic region is made of a second material, that includes Ge, GeSn, or SiGe. The intrinsic region has a maximal lateral extension between two lateral ends of the intrinsic region of equal to or below 400 nm. The p-doped region and the n-doped region are in-situ doped such that the intrinsic region is not doped when the diode is produced.

A porous carbon material composite formed of a porous carbon material and a functional material and equipped with high functionality. The porous carbon material composite is formed of (A) a porous carbon material obtainable from a plant-derived material having a silicon (Si) content of 5 wt % or higher as a raw material; and (B) a functional material adhered on the porous carbon material, and has a specific surface area of 10 m2/g or greater as determined by the nitrogen BET method and a pore volume of 0.1 cm3/g or greater as determined by the BJH method and MP method.

The present disclosure relates to a method for high pressure regulation and control of photoelectric detection based on BiOBr, and relates to the technical field of photoelectric detection. An exemplary method includes inserting an insulation layer into a pressure chamber of a diamond anvil cell and adding BiOBr, putting a pressure-calibrating substance on a culet of the diamond anvil cell; pressurizing the pressure chamber by rotating a press bolt on the diamond anvil cell; and conducting photoelectric detection using the pressurized BiOBr, where two platinum sheets are disposed on the BiOBr as an electrode. The present disclosure enhances the photo-response speed and photo-responsivity of photoelectric detection.

A method for preparing a p-type gallium oxide film is provided. An M.sub.xGa.sub.1-xN target material is subjected to ablating, sputtering or evaporation in a vacuum chamber via physical vapor deposition to obtain M.sub.xGa.sub.1-xN clusters, where M is selected from the group consisting of Al, Sc, In, Y and Lu, and 0<x<1. The M.sub.xGa.sub.1-xN clusters are oxidized by O.sub.2 to obtain M-N co-doped p-type gallium oxide film on a substrate. The M.sub.xGa.sub.1-xN target material is prepared from MN powder and GaN powder through ball milling, pressing and sintering. A p-type gallium oxide film prepared by the method, and its application in the manufacturing of solar-blind ultraviolet detection devices and high-power electronic devices are also provided.

Compositions, thin films, devices, and methods involving doped oxide semiconductor materials are described. Indium gallium doped zinc oxide (IGZO) with advantageous properties that may be useful as a transparent conductive oxide (TCO) is described. Methods of digital doping to create doped oxide semiconductor materials are described.

Disclosed are functionalized Group IVA particles, methods of preparing the Group IVA particles, and methods of using the Group IVA particles. The Group IVA particles may be passivated with at least one layer of material covering at least a portion of the particle. The layer of material may be a covalently bonded non-dielectric layer of material. The Group IVA particles may be used in various technologies, including lithium ion batteries and photovoltaic cells.

A method for forming CsPbBr.sub.3 perovskite nanocrystals into a two-dimensional (2D) nanosheet includes providing CsPbBr.sub.3 perovskite nanocrystals; mixing the CsPbBr.sub.3 perovskite nanocrystals into a mixture of a first solvent and a second solvent, to form a solution of the CsPbBr.sub.3 perovskite nanocrystals, the first solvent, and the second solvent; and forming an optoelectronic device by patterning the CsPbBr.sub.3 perovskite nanocrystals into a nanosheet, between first and second electrodes. The first solvent is selected to evaporate before the second solvent.

Various forms of Mg.sub.xGe.sub.1xO.sub.2x are disclosed, where an epitaxial layer comprises single crystal Mg.sub.xGe.sub.1xO.sub.2x, with x having a value of 0x<1, wherein the single crystal Mg.sub.xGe.sub.1xO.sub.2x has a crystal symmetry compatible with a substrate or with an underlying layer on which the single crystal Mg.sub.xGe.sub.1xO.sub.2x is grown. Semiconductor structures and devices comprising the epitaxial layer of Mg.sub.xGe.sub.1xO.sub.2x are disclosed, along with methods of making the epitaxial layers and semiconductor structures and devices.

Described herein is a semiconductor structure, comprising: a drain region; a drift region comprised of a wide band gap material disposed over the drain region; and a channel structure disposed over the drift region. In some embodiments, the channel structure comprises: an optically active material disposed over the drift region, wherein the optically active material generates charge carriers in response to an optical signal; and a source region disposed over the optically active material, wherein in an off state charge carriers in the optically active material are depleted to turn off the semiconductor structure, and in an on state charge carriers in the optically active material conduct a current in the semiconductor structure when an electric field is applied across the source region and drain region, causing the current to substantially flow directly between the source region and the drain region.

In one embodiment described herein, a device includes optically reflective metal patches positioned within a dielectric substrate. A dielectric barrier layer separates the reflective metal patches and the dielectric substrate to prevent diffusion of the reflective metal into the dielectric substrate. An optically transparent dielectric spacer layer is deposited thereon, and an array of metal elements extend from the dielectric spacer layer. A dielectric coating is applied to the top wall and sidewalls of each metal element. A conductive barrier material is positioned between the base wall of each metal element and the dielectric spacer layer. A tunable dielectric material is positioned within the gaps between adjacent metal elements.