Various examples are provided related to color and optical sensing with vertically stacked sensors. In one example, a vertical color sensing element includes a R-sensing channel layer including a first sensing material, G-sensing channel layer including a second sensing material, and a B-sensing channel layer including a third sensing material. First and second transparent insulating layer having first and second thicknesses are between the R and G sensing channel layers and the G and B sensing channel layers, respectively. The first and second thicknesses can be based upon focal lengths of R-light, G-light and B-light entering the vertical color sensing device. In another example, a vertical optical sensor can include a first sensing channel layer including a first sensing material, a transparent insulating layer, and a second sensing channel layer including a second sensing material. The first sensing material can be vdW-S and the second sensing material can be different.

An imaging device with excellent imaging performance is provided. In the imaging device, a first layer, a second layer, and a third layer have a region overlapping with one another, the first layer and the second layer each include transistors, and the third layer includes a photoelectric conversion element. Off-state currents of the transistors formed in the first layer are lower than those of the transistors formed in the second layer, and field-effect mobilities of the transistors formed in the second layer are higher than those of the transistors formed in the first layer.

Provided is a detector that includes a scintillator, a common electrode, a pixel electrode, and a plurality of insulating layers, with a plurality of nano-pillars formed in the plurality of insulating layers, a nano-scale well structure between adjacent nano-pillars, with a-Se separating the adjacent nano-pillars, and a method for operation thereof.

An imaging device with excellent imaging performance is provided. An imaging device that easily performs imaging under a low illuminance condition is provided. A low power consumption imaging device is provided. An imaging device with small variations in characteristics between its pixels is provided. A highly integrated imaging device is provided. A photoelectric conversion element includes a first electrode, and a first layer, a second layer, and a third layer. The first layer is provided between the first electrode and the third layer. The second layer is provided between the first layer and the third layer. The first layer contains selenium. The second layer contains a metal oxide. The third layer contains a metal oxide and also contains at least one of a rare gas atom, phosphorus, and boron. The selenium may be crystalline selenium. The second layer may be a layer of an InGaZn oxide including c-axis-aligned crystals.

An imaging device with excellent imaging performance is provided. In the imaging device, a first layer, a second layer, and a third layer have a region overlapping with one another, the first layer and the second layer each include transistors, and the third layer includes a photoelectric conversion element. Off-state currents of the transistors formed in the first layer are lower than those of the transistors formed in the second layer, and field-effect mobilities of the transistors formed in the second layer are higher than those of the transistors formed in the first layer.

To provide an imaging device capable of high-speed reading. The imaging device includes a photodiode, a first transistor, a second transistor, a third transistor, and a fourth transistor. The back gate electrode of the first transistor is electrically connected to a wiring that can supply a potential higher than a source potential of the first transistor and a potential lower than the source potential of the first transistor. The back gate electrode of the second transistor is electrically connected to a wiring that can supply a potential higher than a source potential of the second transistor. The back gate electrode of the third transistor is electrically connected to a wiring that can supply a potential higher than a source potential of the third transistor and a potential lower than the source potential of the third transistor.

Disclosed are methods for the surface cleaning and passivation of PV absorbers, such as CdTe substrates usable in solar cells, and devices made by such methods. In some embodiments, the method involves an anode layer ion source (ALIS) plasma discharge process to clean and oxidize a CdTe surface to produce a thin oxide layer between the CdTe layer and subsequent back contact layer(s).

The present disclosure generally relates to single photon emission from an indirect band gap two-dimensional (2D) material through deterministic strain induced localization. At least some aspects of the present disclosure relate to techniques for deterministically creating spatially localized defect single photon emission sites in the 750 nm to 800 nm regime using a tungsten diselenide (WSe.sub.2) film and ultra-sharp SiO.sub.2 tips.

The present disclosure generally relates to single photon emission from an indirect band gap two-dimensional (2D) material through deterministic strain induced localization. At least some aspects of the present disclosure relate to techniques for deterministically creating spatially localized defect single photon emission sites in the 750 nm to 800 nm regime using a tungsten diselenide (WSe.sub.2) film and ultra-sharp SiO.sub.2 tips.

Thermoelectric conversion materials, expressed by the following formula: Bi.sub.1-xM.sub.xCu.sub.1-wO.sub.a-yQ1.sub.yTe.sub.b-zQ2.sub.z. Here, M is at least one element selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb; Q1 and Q2 are at least one element selected from the group consisting of S, Se, As and Sb; x, y, z, w, a, and b are 0x<1, 0<w<1, 0.2<a<4, 0y<4, 0.2<b<4, 0z<4 and x+y+z>0. These thermoelectric conversion materials may be used for thermoelectric conversion elements, where they may replace thermoelectric conversion materials in common use, or be used along with thermoelectric conversion materials in common use.