Embodiments of the present disclosure relates to the field of solar cells, and in particular to a solar cell and a production method thereof, and a photovoltaic module. The solar cell includes: a P-type emitter formed on a first surface of an N-type substrate and including a first portion and a second portion, a top surface of the first portion includes first pyramid structures, and a top surface of the second portion includes second pyramid structures whose edges are straight. A transition surface is respectively formed on at least one edge of each first pyramid structure, and each of top surfaces of at least a part of the first pyramid structures includes a spherical or spherical-like substructure. A tunnel layer and a doped conductive layer sequentially formed over a second surface of the N-type substrate. The present disclosure can improve the photoelectric conversion performance of solar cells.

The present invention relates to a method for manufacturing a solar cell having excellent long-term reliability and high efficiency, said method including: a step (7) for applying a paste-like electrode agent to an antireflection film formed on the light receiving surface side of a semiconductor substrate having at least a pn junction, said electrode agent containing a conductive material; and an electrode firing step (9) having local heat treatment (step (9a)) for applying heat such that at least a part of the conductive material is fired by irradiating merely the electrode agent-applied portion with a laser beam, and whole body heat treatment (step (9b)) for heating the whole semiconductor substrate to a temperature below 800 C.

A photodiode and a related method of manufacture are disclosed. The photodiode includes a transfer gate and a floating diffusion adjacent to the transfer gate. In addition, the photodiode includes an upper terminal; an intrinsic semiconductor region in contact with the upper terminal, the intrinsic semiconductor region in a trench in a substrate adjacent to the transfer gate; and a lower terminal in contact with the intrinsic semiconductor region. An insulator layer is along an entirety of a sidewall of the intrinsic semiconductor region and between the intrinsic semiconductor region and the transfer gate. A p-type well may also optionally be between the insulator layer and the transfer gate.

A lateral photodetector may include a high e-field multiplication region. The high e-field multiplication region may be provided by lightly p doping areas adjacent to or near an n-finger of the photodetector. The high e-field multiplication region may also be provided by providing a slightly conducting horizontal plane between p-fingers and n-fingers of the photodetector. The photodetector may be grown on a silicon substrate, which is etched to form a gap to allow for light to reach the photodetector through the gap.

A tandem photovoltaic device includes: an upper cell unit, a lower cell unit and a tunnel junction positioned between the upper cell unit and the lower cell unit; the tunnel junction includes an upper transport layer, a lower transport layer, and an intermediate layer positioned between the upper transport layer and the lower transport layer, the intermediate layer is an ordered defect layer, or, the intermediate layer is a continuous thin layer, or, the intermediate layer includes a first layer in contact with the lower transport layer and a second layer in contact with the upper transport layer; a doping concentration of the first layer is 10-10,000 times of a doping concentration of the lower transport layer, and the doping concentration of the first layer is less than 10.sup.21 cm.sup.3; a doping concentration of the second layer is 10-10,000 times of a doping concentration of the upper transport layer.

A stacked (or vertically arranged) photodetector having at least one contact region on a germanium sensing region. Including the at least one contact on the germanium sensing region reduces the amount of surface area of the germanium sensing region that is interfaced with a substrate (e.g., a silicon substrate) in which the germanium sensing region is included. This reduces the amount of lattice mismatch reduces the amount of misfit defects for the germanium sensing region, which reduces the dark current for the photodetector. The reduced amount of dark current may increase the photosensitivity of the photodetector, may increase low-light performance of the photodetector, and/or may decrease noise and other defects in images and/or light captured by the photodetector, among other examples.

Provided are a silicon carbide detector and a fabrication method thereof. The silicon carbide detector includes: a silicon carbide substrate layer; and a silicon carbide base layer located on a side of the silicon carbide substrate layer, where the silicon carbide base layer includes a first silicon carbide layer, a second silicon carbide layer and a third silicon carbide layer that are stacked; the third silicon carbide layer serves as an anode layer and is located in a first region of the second silicon carbide layer, and a second region of the second silicon carbide layer is exposed; N drift rings are provided in the second region of the second silicon carbide layer, and among the N drift rings, a 1st drift ring is a closed ring and remaining drift rings are arranged in a spiral pattern around the 1st drift ring.