A semiconductor device, a manufacturing method therefor, and an electronic apparatus that reduces a parasitic capacitance generated between an internal electrode and a board silicon to suppress waveform distortion and signal delay of high-frequency signals, thereby enabling a high-speed operation. A configuration to include: a board silicon; a silicon oxide film stacked on the board silicon; an inter-wiring-layer film having an internal electrode stacked on the silicon oxide film; a through-hole forming a stepped hole with a larger-diameter hole extending from the board silicon to the silicon oxide film and a smaller-diameter hole extending from the silicon oxide film to the internal electrode; an interlayer dielectric film stacked on a circumferential side surface of the larger-diameter hole and the board silicon; and a redistribution layer on an inner peripheral surface of the through-hole and the interlayer dielectric film and connected to the internal electrode.

One aspect of this invention relates to a method of forming a nanomaterial ink comprising providing an as-prepared (AP) semiconductor ink containing first nanosheets of at least one semiconductor; and megasonically exfoliating the AP semiconductor ink to form a megasonicated semiconductor ink containing second nanosheets of the at least one semiconductor.

Photovoltaic modules including a plurality of solar cells bonded to a module back sheet are described herein, wherein each solar cell includes a superstrate bonded to a front side of a photovoltaic device to facilitate handling of very thin photovoltaic devices during fabrication of the module. Modules may also include module front sheets and the solar cells may include bottom sheets. The modules may be made of flexible materials, and may be foldable. Fabrication processes include tabbing photovoltaic devices prior to attaching the individual superstrates.

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

A radiation detector comprises a silicon body in which are defined vertical pores filled with a converter material and situated within silicon depletion regions. One or more charge-collection electrodes are arranged to collect current generated when secondary particles enter the silicon body through walls of the pores. The pores are disposed in low-density clusters, have a majority pore thickness of 5 m or less, and have a majority aspect ratio, defined as the ratio of pore depth to pore thickness, of at least 10.

A plurality of holes in a top surface of a silicon medium form a plurality of sub-meta lenses to result in multiple focal points rather than a single point (resulting from using a single meta lens). As a result, optical paths for incoming light are reduced as compared with a single optical path associated with a single meta lens, which in turn reduces angular response of incident photons. Thus, a pixel sensor including the plurality of sub-meta lenses experiences improved light focus and greater signal-to-noise ratio. Additionally, dimensions of the pixel sensor are reduced (particularly a height of the pixel sensor), which allows for greater miniaturization of an image sensor that includes the pixel sensor.

The present application is directed to a solid state device for detecting neutrons. The device includes a semiconductor substrate having pores. The device also includes a p- or n-type doping layer formed on a surface of the pores. Moreover, a layer of fill material is formed on the p- or n-type doping layer. The present application also is directed to a method of making a solid state device. Further, the present application is directed to a method of detecting efficiency of solid state detector devices.

The present disclosure relates to a photodiode comprising a first part made of silicon and a second part made of doped germanium lying on and in contact with the first part, the first part comprising a stack of a first area and of a second area forming a p-n junction and the doping level of the germanium increasing as the distance from the p-n junction increases.

A method of manufacturing a lead salt thin film on a substrate by seeding a substrate with a lead salt solution (e.g., PbSe, PbS, or PbTe) to form a seeded substrate comprising lead salt seed crystals, and growing the lead salt thin film upon the substrate by exposing the seeded substrate to a chemical bath comprising the lead salt solution at a predetermined growth temperature. A lead salt thin film manufactured by the process. A photonic crystal microchip comprising the lead salt thin film. A gas sensing device comprising a diode laser, a mid-infrared photodetector, and the photonic crystal microchip. A method of detecting a hydrocarbon gas, comprising exposing a gas sample to the gas sensing device, and determining the content of hydrocarbon gases in the gas sample.