A camera having an integrated dewar cooler assembly (IDCA) with an optical window, and a reduced dark current photodetector disposed within the IDCA to receive light passing through the optical window. The photodetector comprising a semiconductor photo absorbing layer, a semiconductor barrier layer having a thickness and a first side adjacent a side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the photo absorbing layer and a conduction band energy level exhibiting an energy gap in relation to the conduction band of the photo absorbing layer, and a contact area comprising a doped semiconductor, the contact area is adjacent a second side of the barrier layer opposing the first side. The energy gap and/or the thickness of the of the barrier layer is sufficient to minimize charge carriers tunneling and thermalization.

A method of baking a detector, the method comprising: placing a mid-wave infrared detector in an environmental chamber, wherein the environmental chamber is opaque. The mid-wave infrared detector comprises an anode, a guard terminal, and a cathode. The method further comprising connecting the anode to the cathode in a short circuit configuration, heating the environmental chamber to a bake temperature selected in the range of 60 to 70 degrees Celsius, and maintaining the detector in the environmental chamber for a period selected in the range of 72 hours to 240 hours.

The present invention provides a radiation detector UBM electrode structure body and a radiation detector which suppress the degradation of metal electrode layers at the time of formation of UBM layers and achieve sufficient electric characteristics, and a method of manufacturing the same. A radiation detector UBM electrode structure body according to the present invention includes a substrate made of CdTe or CdZnTe, comprising a Pt or Au electrode layer formed on the substrate by electroless plating, an Ni layer formed on the Pt or Au electrode layer by sputtering, and an Au layer formed on the Ni layer by sputtering.

A method for fabricating an optically transparent conductor including depositing a plurality of metal nanowires on a substrate, annealing or illuminating the plurality of metal nanowires to thermally or optically fuse nanowire junctions between metal nanowires to form a metal nanowire network, disposing a graphene layer over the metal nanowire network to form a nanohybrid layer comprising the graphene layer and the metal nanowire network, depositing a dielectric passivation layer over the nanohybrid layer, patterning the dielectric passivation layer using lithography, printing, or any other method of patterning to define an area for the optically transparent conductor, and etching the patterned dielectric passivation layer to define the optically transparent conductor.

An ultraviolet photodetector for a sensor device includes a film deposited on a substrate. The film includes a compositionally graded magnesium-zinc oxide having a ratio of magnesium-to-zinc that decreases between a portion of the film adjacent to the substrate and a portion of the film opposite the substrate for shifting the peak absorption of the film toward the visible wavelengths of the electromagnetic spectrum.

A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

A compound photovoltaic cell includes a substrate, a first cell made of a first semiconductor material and formed on the substrate, a tunnel layer, and a second cell made of a second semiconductor material lattice mismatched with a material of the substrate, connected to the first cell via the tunnel layer, and disposed on an incident side with respect to the first cell, wherein band gaps of the first and the second cells become smaller from an incident side to a back side, and wherein the tunnel layer includes a p-type layer disposed on the incident side and a n-type layer disposed on the back side, the p-type layer being a p.sup.+-type (Al)GaInAs layer, the n-type layer being an n.sup.+-type InP layer, an n.sup.+-type GaInP layer having a tensile strain with respect to InP or n.sup.+-type Ga(In)PSb layer having a tensile strain with respect to InP.

A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

A quantum well infrared photodetector (QWIP) and method of making is disclosed. The QWIP includes a plurality of epi-layers formed into multiple periods of quantum wells, each of the quantum wells being separated by a barrier, the quantum wells and barriers being formed of II-VI semiconductor materials. A multiple wavelength QWIP is also disclosed and includes a plurality of QWIPs stacked onto a single epitaxial structure, in which the different QWIPs are designed to respond at different wavelengths. A dual wavelength QWIP is also disclosed and includes two QWIPs stacked onto a single epitaxial structure, in which one QWIP is designed to respond at 10 m and the other at 3-5 m wavelengths.

The semiconductor device comprises a semiconductor wafer with an integrated circuit, formed by a plurality of dies, a further semiconductor wafer, which differs from the semiconductor wafer in diameter and semiconductor material, the semiconductor wafer and the further semiconductor wafer being bonded to one another by means of a bonding layer, and an electrically conductive contact layer arranged on the further semiconductor wafer opposite to the bonding layer.