A semiconductor structure includes a substrate including a first semiconductor material, a first doped region disposed in the substrate and having a first conductivity type, a second doped region disposed in the substrate and separated from the first doped region, a first epitaxial region disposed in a cavity of the substrate, and a second epitaxial region disposed in the cavity of the substrate and connected to the first epitaxial region. The second doped region has a second conductivity type different than the first conductivity type. The first epitaxial region includes the first semiconductor material with an impurity of the second conductivity type, and the second epitaxial region includes a second semiconductor material different than the first semiconductor material.

A diode comprises a p-doped region, an n-doped region, and a light-sensitive intrinsic region sandwiched laterally between the p-doped region and the n-doped region in a direction transverse to a direction of light propagation in the diode. The p-doped region is made of a first material doped with a first type of dopant and the n-doped region is made of a third material doped with a second type of dopant. The first material includes Si or SiGe. The third material includes Si or SiGe. The intrinsic region is made of a second material, that includes Ge, GeSn, or SiGe. The intrinsic region has a maximal lateral extension between two lateral ends of the intrinsic region of equal to or below 400 nm. The p-doped region and the n-doped region are in-situ doped such that the intrinsic region is not doped when the diode is produced.

The present disclosure relates to a photodiode and method of forming the photodiode. The photodiode includes a doped layer and an absorption region positioned on the doped layer. The absorption region includes a base region contacting the doped layer, a first facet region positioned on the base region, and a second facet region positioned on the first facet region. The first facet region includes (i) a first tapered surface and a second tapered surface extending from the base region and (ii) a first step region and a second step region extending laterally from the first tapered surface and the second tapered surface, respectively. The second facet region includes a third tapered surface extending from the first step region and a fourth tapered surface extending from the second step region.

In an embodiment, an optoelectronic component includes a structured region including a semiconductor body having a first semiconductor region and a second semiconductor region, which have different conductivities, a first main surface and a second main surface and at least one first delimiting surface and at least one second delimiting surface delimiting a recess, a protective layer, which is arranged on the at least one first delimiting surface and covers a junction between the first semiconductor region and the second semiconductor region in the recess, wherein the first main surface is not covered by the protective layer and the protective layer does not adjoin any further protective layer on a side facing the junction and on a side facing away from the junction, and wherein the protective layer is retracted from the first delimiting surface and the second delimiting surface or wherein the protective layer has an L-shape in cross-section.

A method for forming CsPbBr.sub.3 perovskite nanocrystals into a two-dimensional (2D) nanosheet includes providing CsPbBr.sub.3 perovskite nanocrystals; mixing the CsPbBr.sub.3 perovskite nanocrystals into a mixture of a first solvent and a second solvent, to form a solution of the CsPbBr.sub.3 perovskite nanocrystals, the first solvent, and the second solvent; and forming an optoelectronic device by patterning the CsPbBr.sub.3 perovskite nanocrystals into a nanosheet, between first and second electrodes. The first solvent is selected to evaporate before the second solvent.

The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.

Described herein is a semiconductor structure, comprising: a drain region; a drift region comprised of a wide band gap material disposed over the drain region; and a channel structure disposed over the drift region. In some embodiments, the channel structure comprises: an optically active material disposed over the drift region, wherein the optically active material generates charge carriers in response to an optical signal; and a source region disposed over the optically active material, wherein in an off state charge carriers in the optically active material are depleted to turn off the semiconductor structure, and in an on state charge carriers in the optically active material conduct a current in the semiconductor structure when an electric field is applied across the source region and drain region, causing the current to substantially flow directly between the source region and the drain region.

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed in a plurality of non-continuous trenches in the back surface of the substrate.

The disclosure provides a photoelectric detector. The photoelectric detector includes a waveguide layer, an absorption layer, and a cladding material. The absorption layer is located on an upper surface of the waveguide layer or at least partially embedded in the waveguide layer. The cladding material covers top portions and side walls of the waveguide layer and the absorption layer. At least one end surface of the photoelectric detector is a light incident surface, and a thickness of an end surface of the absorption layer adjacent to the light incident surface is smaller than a thickness of other portions.

A photodetector, comprising a flat slab structure (1), a waveguide structure (6), a light trapping structure (2), an absorption structure (3), a first electrode structure (4) and a second electrode structure (5), wherein the waveguide structure (6) extends into the light trapping structure (2), and a first edge where a first side wall of the waveguide structure (6) is located is tangent to a second edge where a second side wall in outer side walls of the light trapping structure (2) is located; the waveguide structure (6) is used for guiding incident light into the light trapping structure (2) in a direction tangent to the second edge; the guided light is trapped in the light trapping structure (2) by means of total internal reflection of the side walls of the light trapping structure (2) for annular transmission, and the guided light is coupled into the absorption structure (3) by means of the light trapping structure (2); the first electrode structure (4) is located in the light trapping structure (2); the first electrode structure (4) and the second electrode structure (5) are used for collecting electrons or holes transmitted along the absorption structure (3) and the light trapping structure (2); the types of current carriers collected by the first electrode structure (4) and the second electrode structure (5) are different.