A multi-laver device and its method of manufacture are disclosed. The multi-layer device comprises a first electrode layer, a first repair layer, a functional layer, and a second electrode layer. The first repair layer comprises a conductive hydrogel film or conductive hydrogel beads, the conductive hydrogel film or the conductive hydrogel beads comprising conductive filler particles dispersed in a cross-linked polymer. The repair layer protects the multi-layer device from electrical short circuits. A multilayer device is also disclosed including a light-transmissive electrode layer comprising a porous mesh or porous spheres.

A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.

Provided is a photoelectric conversion module capable of improving bonding strength between photoelectric conversion elements adjacent to each other. The photoelectric conversion module (100) comprises a first photoelectric conversion element (10a) including a collector electrode (30a) and a second photoelectric conversion element (10b) including a conductive substrate (20b). The first photoelectric conversion element (10a) and the second photoelectric conversion element (10b) are arranged side by side so as to partially overlap each other. The photoelectric conversion module comprises a conductor (200) electrically connecting the collector electrode (30a) of the first photoelectric conversion element (10a) and the conductive substrate (20b) of the second photoelectric conversion element (10b) to each other. The conductor (200) is provided from a region of the collector electrode (30a) of the first photoelectric conversion element (10a) to a region outside the collector electrode (30a).

A flexible ultraviolet sensor circuit is provided comprising a number of solar cells, a reflective display device electrically connected to the solar cells, and a floating gate transistor electrically connected to the solar cells and reflective display device. A floating gate in the floating gate transistor discharges in response to ultraviolet light such that the floating gate transistor turns on when a threshold voltage of the floating gate transistor drops below a combined open circuit voltage of the solar cells minus a switching threshold of the reflective display device, thereby causing electrical current flow through the ultraviolet sensor circuit. The reflective display device changes as the electrical current flow increases, indicating total ultraviolet light exposure.

A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including CuZnSnS(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

This power generation module includes: a power generating portion (30) including a power generating element (19); and a wiring substrate. The wiring substrate includes: a reinforcement plate; and a flexible printed circuit (79) provided above the reinforcement plate. The flexible printed circuit (79) has: an FPC land portion (70) configured to have the power generating portion (30) mounted thereto; and a FPC wire portion (73) connected to the FPC land portion (70). The width of the FPC wire portion (73) is smaller than the width of the FPC land portion (70).

This power generation circuit unit includes a wiring substrate and a plurality of power generating elements mounted to the wiring substrate. The wiring substrate includes: a first substrate (32E) and a second substrate (32F) to each of which the power generating element is mounted; and a coupling portion (33L) configured to couple the first substrate (32E) and the second substrate (32F) together. The first substrate (32E) can be disposed at at least two positions of: a first position separated from the second substrate (32F) by a first distance; and a second position separated from the second substrate (32F) by a second distance being greater than the first distance. The coupling portion (33L) has an FPC (flexible printed circuits). In a state where the first substrate is disposed at the second position, at least a part of the coupling portion (33L) is twisted.