A method of manufacturing an optical semiconductor element includes: a first step in which a columnar structure of a semiconductor layer formed on a semi-insulating substrate is formed; a second step in which the substrate is exposed in a periphery of the columnar structure; a third step in which a region including exposed surfaces of the first contact layer and the substrate is pretreated; a fourth step in which a first electrode is formed on the exposed surface of the first contact layer; a fifth step in which an interlayer insulating film is formed in a region including a side surface of the columnar structure and the exposed surfaces; a sixth step in which a first electrode wiring is formed on the interlayer insulating film; and a seventh step in which a second electrode wiring is formed on the interlayer insulating film.

A ultraviolet detector includes a substrate; a first epitaxial layer that is a heavily doped epitaxial layer and located on the substrate, a second epitaxial layer located on the first epitaxial layer, where the second epitaxial layer is a lightly doped epitaxial layer, or a double-layer or multi-layer structure composed of at least one lightly doped epitaxial layer and at least one heavily doped epitaxial layer; an ohmic contact layer located on the second epitaxial layer or formed in the second epitaxial layer, where the ohmic contact layer is a graphical heavily doped layer; and a first metal electrode layer located on the ohmic contact layer.

A photovoltaic cell (1) including a first front collector layer (4), an amorphous silicon layer (6) on the first layer (4) and a second conductive layer (8) on the amorphous silicon layer (6). Electrical connection of the second conductive layer (8) to the first layer (4) is made through the amorphous silicon layer (6) at the periphery of the photovoltaic cell, the electrically conductive layer (8) comprising a positive peripheral bus (8), which is connected to the TCO first layer (4) and to at least one positive connection terminal at one end of the positive peripheral bus, and a negative peripheral bus, which is connected to a negative connection terminal, and the positive and negative peripheral buses being asymmetrical relative to one another, with the positive peripheral bus being longer than the negative peripheral bus.

The present invention is directed to a position sensing detector made of a photodiode having a semi insulating substrate layer; a buffered layer that is formed directly atop the semi-insulating substrate layer, an absorption layer that is formed directly atop the buffered layer substrate layer, a cap layer that is formed directly atop the absorption layer, a plurality of cathode electrodes electrically coupled to the buffered layer or directly to the cap layer, and at least one anode electrode electrically coupled to a p-type region in the cap layer. The position sensing detector has a photo-response non-uniformity of less than 2% and a position detection error of less than 10 m across the active area.

A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light receiving surface side, the insulation structure having a forward tapered shape where a top diameter at an upper portion of the light receiving surface side of the silicon layer is greater than a bottom diameter at a bottom portion of the silicon layer. Also, there are provided a method of producing the solid state imaging apparatus and an electronic device including the solid state imaging apparatus.

An example device in accordance with an aspect of the present disclosure includes a photodetector disposed on a substrate, and a mirror disposed on the photodetector. The mirror is to reflect light back into the photodetector. The mirror includes a reflective layer and a second layer. The second layer is disposed between the reflective layer and the photodetector.

The invention relates to semiconductor devices for conversion of the ionizing radiation into an electrical signal enabling determination of the radiation level and absorbed dose of gamma, proton, electronic and alpha radiations being measured. The ionizing radiation sensor is a p-i-n structure fabricated by the planar technology. The sensor contains a high-resistance silicon substrate of n-type conductivity, on whose front side there are p-regions; layer from SiO2; aluminum metallization; and a passivating layer. P-region, located in the central part of the substrate and occupying the most surface area, forms the active region of the sensor. At least two p-regions in the form of circular elements are located in the inactive region on the perimeter of the substrate around the central p-region and ensure a decrease in the surface current value and smooth voltage drop from the active region to the device perimeter.

The present invention discloses a vertical photoconductive semiconductor switch (PCSS) made of group III nitride material. The vertical PCSS is made of a plate of a semi-insulating group III nitride crystal such as GaN, AlN, and BN. The vertical PCSS has an electrically conductive region on the top surface, which acts as a window for the photo irradiation. There is a top electrode connected to the electrically conductive region. The shortest distance from the edge of the plate to the boundary of the electrically conductive region and the boundary of the top electrode is preferably larger than the thickness of the plate. The Vertical PCSS also has an electrode on the bottom surface of the plate.

The present disclosure relates to a photodiode device, which overcomes the drawbacks of conventional devices like increased dark currents. The photodiode device includes a semiconductor substrate, at least one doped well of a first type of electric conductivity at a main surface of the substrate and at least one doped region of a second type of electric conductivity being adjacent to the doped well. The at least one doped well and the at least one doped region are electrically contactable. On a portion of an upper surface of the doped well a protection structure is arranged. The protection structure protects the upper surface of the underlying doped well from an etching process for removing a spacer layer.

Disclosed is a circular interdigital array plasmon electrode photoelectric detector suitable for non-polarized light. The detector includes a substrate, a semiconductor layer and a circular interdigital array electrode, where rectangular electrodes on left side and right side of the circular interdigital array electrode respectively form a positive electrode and a negative electrode, the positive and negative electrodes are connected to the circular interdigital array electrode through electrode connecting wires, and a circular electrode array and the electrode connecting wires form a circular interdigital array electrode structure. A preparation method for a circular interdigital array plasmon electrode photoelectric detector is also provided. According to the present disclosure, by adjusting inner circle and outer circle radii and the arrangement manner of circular electrodes, the polarization-insensitive effect of the detector for incident light is achieved, and the absorption efficiency for the incident light and the bandwidth of the detector are increased.