A solid state detector for ionizing radiation having a semiconductor substrate, a conductive metal layer, a first and a second active region, the first active region having a faster response time to ionizing radiation than the second active region. A first voltage is applied to the first active region and a second voltage applied to the second active region, the first and second voltages having opposite polarities and equal magnitudes. The solid state detector being configured to maintain a constant output voltage when not irradiated and to output an output voltage when irradiated, the output voltage being the time resolved sum of a first charge and a second charge accumulated by the two active regions, the first charge and the second charge having opposite polarities and configured to drain residual charges from the active regions.

A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole. A first distance between an edge of the groove and an edge of the through-hole surrounded by the groove is longer than a second distance between the edge of the groove and an edge of the light receiving region adjacent to the through-hole surrounded by the groove.

A photodiode structure is based on the use of a double junction sensitive to different wavelength bands based on a magnitude of a reverse bias applied to the photodiode. The monolithic integration of a sensor with double functionality in a single chip allows realization of a low cost ultra-compact sensing element in a single packaging useful in many applications which require simultaneous or spatially synchronized detection of optical photons in different spectral regions.

A photodiode structure is based on the use of a double junction sensitive to different wavelength bands based on a magnitude of a reverse bias applied to the photodiode. The monolithic integration of a sensor with double functionality in a single chip allows realization of a low cost ultra-compact sensing element in a single packaging useful in many applications which require simultaneous or spatially synchronized detection of optical photons in different spectral regions.

In an embodiment a semiconductor detector includes a doped semiconductor body with a detection region, a front side and a rear side opposite the front side, a first electrical ring electrode and a second electrical ring electrode arranged around a read-out point on the front side, wherein the ring electrodes are configured to generate an electric field profile in the semiconductor body to guide free charge carriers to the read-out point, the ring electrodes overlapping at least partially with the detection region, as seen in plan view of the front side, a passivation layer arranged on the front side in a direction parallel to the front side between the first ring electrode and the second ring electrode and a first doped layer extending along the front side and electrically conductively connecting the first ring electrode to the second ring electrode without interruptions, wherein the first doped layer and a rest of the semiconductor body are oppositely doped to each other, and wherein a specific resistance of the first doped layer is between 1 cm and 1000 cm, inclusive.

Embodiments of the disclosure provide a structure with a guard ring between the terminals of a single photon avalanche diode photodetector (SPAD), and related methods. A structure according to the disclosure includes a SPAD with an anode within a doped well and a cathode within the doped well. A guard ring includes a semiconductor material within the doped well. The semiconductor material and the doped well have opposite doping polarities.

A photodiode has an absorption layer and a cap layer operatively connected to the absorption layer. A pixel is formed in the cap layer and extends into the absorption layer to receive charge generated from photons therefrom. The pixel defines an annular diffused area to reduce dark current and capacitance. A photodetector includes the photodiode. The photodiode includes includes an array of pixels formed in the cap layer. At least one of the pixels extends into the absorption layer to receive charge generated from photons therefrom. At least one of the pixels defines an annular diffused area to reduce dark current and capacitance.

A method of manufacturing an optical semiconductor element includes: a first step in which a columnar structure of a semiconductor layer formed on a semi-insulating substrate is formed; a second step in which the substrate is exposed in a periphery of the columnar structure; a third step in which a region including exposed surfaces of the first contact layer and the substrate is pretreated; a fourth step in which a first electrode is formed on the exposed surface of the first contact layer; a fifth step in which an interlayer insulating film is formed in a region including a side surface of the columnar structure and the exposed surfaces; a sixth step in which a first electrode wiring is formed on the interlayer insulating film; and a seventh step in which a second electrode wiring is formed on the interlayer insulating film.

An avalanche photodiode for detecting ultraviolet radiation, including: a silicon carbide body having a first type of conductivity, which is delimited by a front surface and forms a cathode region; an anode region having a second type of conductivity, which extends into the body starting from the front surface and contacts the cathode region; and a guard ring having the second type of conductivity, which extends into the body starting from the front surface and surrounds the anode region.

There is provided an electronic device including at least two diodes each having a mesa structure, including: a first and a second doped semiconductor portion forming a p-n junction, such that a first part of the second doped semiconductor portion located between a second part of the second doped semiconductor portion and the first doped semiconductor portion forms an offset from the second part; a first electrode electrically connected to the first portion, and a second electrode electrically connected to the second portion at an upper face of the second part; and dielectric portions covering side faces of the first portion, the second portion, and the first electrode, wherein upper faces of the first electrode, the second electrode, and the dielectric portions form an approximately plane continuous surface.