A method for fabricating an optically transparent conductor including depositing a plurality of metal nanowires on a substrate, annealing or illuminating the plurality of metal nanowires to thermally or optically fuse nanowire junctions between metal nanowires to form a metal nanowire network, disposing a graphene layer over the metal nanowire network to form a nanohybrid layer comprising the graphene layer and the metal nanowire network, depositing a dielectric passivation layer over the nanohybrid layer, patterning the dielectric passivation layer using lithography, printing, or any other method of patterning to define an area for the optically transparent conductor, and etching the patterned dielectric passivation layer to define the optically transparent conductor.

A solar cell includes a photoelectric conversion section that, includes an n-type crystal silicon substrate, a p-type silicon-based thin-film provided on a first principal surface, and an n-type silicon-based thin-film provided on a second principal surface, and further includes a first electrode layer on the p-type silicon-based thin-film, and a second electrode layer on the n-type silicon-based thin film. A patterned collector electrode is provided on the first electrode layer. On the first principal surface of the photoelectric conversion section, a wraparound portion of the second electrode layer, an insulating region where neither the first electrode layer nor the second electrode layer is provided, and a first electrode layer-formed region are arranged in this order from a peripheral end.

The invention provides a flexible transparent solar cell and a production process of the same, and belongs to the technical field of solar cell. The flexible transparent solar cell comprises: a flexible transparent substrate, a transparent front-electrode, a cell unit, a transparent back-electrode and a transparent encapsulating layer, which are disposed in this order; the transparent front-electrode comprising a metallic grid thin film layer and a graphene layer; and the transparent back-electrode comprising a nano metal layer and a graphene layer. The invention can be used in production of flexible transparent solar cell, in order to improve conductivity and transparency of solar cells.

Electrically conductive, thin, smooth films are provided that comprise silver (Ag) and a conductive metal, such as aluminum (Al), titanium (Ti), nickel (Ni), chromium (Cr), gold (Au), magnesium (Mg), tantalum (Ta), germanium (Ge) or combinations thereof. In other alternative variations, electrically conductive, thin, smooth films are provided that comprise gold (Au) or copper (Cu) and a conductive metal, such as aluminum (Al), titanium (Ti), nickel (Ni), chromium (Cr), gold (Au), magnesium (Mg), tantalum (Ta), germanium (Ge) or combinations thereof. Such materials have excellent electrical conductivity, may be ultra-thin, flexible, transparent, and have low optical loss. Assemblies incorporating such films and methods of making the films are also provided. The assemblies may be used in photovoltaic and light emitting devices with high power conversion efficiencies or optical meta-materials that exhibit high transmittance and homogeneous response, among others.

A solar cell manufacturing method includes: forming a first amorphous semiconductor layer of one conductivity type on a main surface of a semiconductor substrate; forming an insulation layer on the first amorphous semiconductor layer; etching to remove the insulation layer and the first amorphous semiconductor layer in a predetermined first region; forming a second amorphous semiconductor layer of an other conductivity type on the insulation layer after the etching, the other conductivity type being different from the one conductivity type; and etching to remove the second amorphous semiconductor layer in a predetermined second region, wherein the etching to remove the insulation layer and the first amorphous semiconductor layer in a predetermined first region includes: applying an etching paste to the insulation layer in the predetermined first region; and etching to remove the insulation layer and the first amorphous semiconductor layer in the predetermined first region using the etching paste.

Monolithic tandem chalcopyrite-perovskite photovoltaic devices and techniques for formation thereof are provided. In one aspect, a tandem photovoltaic device is provided. The tandem photovoltaic device includes a substrate; a bottom solar cell on the substrate, the bottom solar cell having a first absorber layer that includes a chalcopyrite material; and a top solar cell monolithically integrated with the bottom solar cell, the top solar cell having a second absorber layer that includes a perovskite material. A monolithic tandem photovoltaic device and method of formation thereof are also provided.

A product comprises a thin film comprising metal nanostructures in an optically transparent polymer, wherein a loading of the metal nanostructures ranges from 5-50 wt % and having a sheet resistance less than 20 Ohm/sq. Related devices and methods are also disclosed.

The invention generally relates to the field of transparent electrodes. In particular, the invention relates to a method for producing a transparent and conducting auto-supported silver nanowire film, to the transparent and conducting silver nanowire film obtained by said method and to the use of said film as a transparent and flexible electrode in an electric device, in particular in a photovoltaic cell (solar cell).

The present disclosure relates to OLED and PV devices including transparent electrodes that are formed of conductive nanostructures and methods of improving light out-coupling in OLED and input-coupling in PV devices.

A ballistic carrier spectral sensor includes a photon absorption region to generate photo-generated carriers from incident light; a first potential barrier region adjacent the photon absorption region and having an adjustable height defining a minimum energy of the photo-generated carriers required to pass therethrough; a second potential barrier region having an adjustable height defining a minimum energy of the photo-generated carriers required to pass therethrough; a spillage well region disposed between the first potential barrier region and the second potential barrier region and configured to collect photo-generated carriers having an energy lower than that required to pass through the second potential barrier region; and a collection region adjacent the second potential barrier region and configured to collect carriers that cross the second potential barrier region. A total thickness of the first potential barrier region and the spillage well region is less than a mean free path of the photo-generated carriers.