A semiconductor device, a manufacturing method therefor, and an electronic apparatus that reduces a parasitic capacitance generated between an internal electrode and a board silicon to suppress waveform distortion and signal delay of high-frequency signals, thereby enabling a high-speed operation. A configuration to include: a board silicon; a silicon oxide film stacked on the board silicon; an inter-wiring-layer film having an internal electrode stacked on the silicon oxide film; a through-hole forming a stepped hole with a larger-diameter hole extending from the board silicon to the silicon oxide film and a smaller-diameter hole extending from the silicon oxide film to the internal electrode; an interlayer dielectric film stacked on a circumferential side surface of the larger-diameter hole and the board silicon; and a redistribution layer on an inner peripheral surface of the through-hole and the interlayer dielectric film and connected to the internal electrode.

A method of making a single-photon detector includes growing an epitaxial multi-layer structure that includes a buffer layer, an absorption layer, a transition layer, a field control charge layer, a multiplication layer, an inversion layer, a migration layer, a window layer, and an Ohmic contact layer sequentially on a substrate. A curved diffusion region is formed in the window layer and the Ohmic contact layer via a diffusion process. A mesa structure is formed by etching the epitaxial multi-layer. A light input window is formed on the substrate. A p-type electrode is formed on the Ohmic contact layer, and an n-type electrode is formed on the substrate. The inversion layer provides supplementary regulation of an electric field distribution that is regulated by the field control charge layer. A single-photon detector made from the method, and a single-photon detector array made with a multitude of the single-photon detectors are also provided.

The coated glass sheet of the present invention includes: a glass sheet; and a coating film provided on at least one principal surface of the glass sheet and having a smooth surface. The coating film includes: isolated closed pores present within the coating film; and a matrix. The coating film is substantially free of open pores open at the surface of the coating film. For the coated glass sheet of the present invention, a transmittance gain is 2.5% or more, the transmittance gain being calculated by subtracting an average transmittance of the glass sheet as determined by applying light having wavelengths of 380 to 1100 nm to the glass sheet in the absence of the coating film on the surface of the glass sheet from an average transmittance of the coated glass sheet as determined by applying light having the wavelengths to the coated glass sheet from a side on which the coating film lies.

The present technology relates to a light receiving device and a distance measurement system that enable light to be surely received by a reference pixel. A light receiving device includes a plurality of pixels each including a light receiving element having a light receiving surface, and a light emission source provided on an opposite side of the light receiving surface with respect to the light receiving element. The plurality of pixels includes a first pixel including a light shielding member provided between the light receiving element and the light emission source, and a second pixel including a light guiding unit that is configured to propagate a photon and is provided between the light receiving element and the light emission source. The present technology can be applied to a distance measurement system or the like that detects a distance to a subject in a depth direction, for example, for example.

A display module and system applications including a display module are described. The display module may include a display substrate including a front surface, a back surface, and a display area on the front surface. A plurality of interconnects extend through the display substrate from the front surface to the back surface. An array of light emitting diodes (LEDs) are in the display area and electrically connected with the plurality of interconnects, and one or more driver circuits are on the back surface of the display substrate. Exemplary system applications include wearable, rollable, and foldable displays.

A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole. A first distance between an edge of the groove and an edge of the through-hole surrounded by the groove is longer than a second distance between the edge of the groove and an edge of the light receiving region adjacent to the through-hole surrounded by the groove.

The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.

A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

A solar cell assembly in which a solar cell component is bonded to a flexible support is disclosed. The solar cell assembly comprises a flexible support with a predetermined size, a solar cell component, bonding adhesive between the support and the solar cell component, wherein the support with the predetermined size has a uniform borders of 0.003 inch to 0.2 inch in width extending beyond the edges of the solar cell component.