The application discloses a solar cell and a preparation method for a solar cell. The preparation method for a solar cell comprises: sequentially forming a tunnel silicon oxide layer, an N-type doped polysilicon layer, and a back passivated anti-reflection film on a back surface of an N-type silicon substrate; performing grooving on the back passivated anti-reflection film, and forming a nickel metal layer in a grooved region; printing a back fine gate electrode on the nickel metal layer, and printing a back main gate electrode on the back passivated anti-reflection film, wherein the back fine gate electrode is electrically connected to the back main gate electrode.

The present disclosure pertains to the field of back contact cell technologies, and particularly relates to a hybrid passivation back contact cell and a fabrication method thereof, the hybrid passivation back contact cell including: an N-type doped silicon substrate having a light receiving surface and a back surface, and a first semiconductor layer and a second semiconductor layer which are arranged on the back surface, wherein the second semiconductor layer includes an intrinsic silicon layer and a P-type doped silicon layer sequentially arranged in an outward direction perpendicular to the back surface, and the first semiconductor layer includes a tunneling oxide layer and an N-type doped silicon crystal layer sequentially arranged in the outward direction perpendicular to the back surface.

Thermocompression bonding approaches for foil-based metallization of non-metal surfaces of solar cells, and the resulting solar cells, are described. For example, a solar cell includes a substrate and a plurality of alternating N-type and P-type semiconductor regions disposed in or above the substrate. A plurality of conductive contact structures is electrically connected to the plurality of alternating N-type and P-type semiconductor regions. Each conductive contact structure includes a metal foil portion disposed in direct contact with a corresponding one of the alternating N-type and P-type semiconductor regions.

Aligned metallization approaches for fabricating solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a semiconductor layer over a semiconductor substrate. A first plurality of discrete openings is in the semiconductor layer and exposes corresponding discrete portions of the semiconductor substrate. A plurality of doped regions is in the semiconductor substrate and corresponds to the first plurality of discrete openings. An insulating layer is over the semiconductor layer and is in the first plurality of discrete openings. A second plurality of discrete openings is in the insulating layer and exposes corresponding portions of the plurality of doped regions. Each one of the second plurality of discrete openings is entirely within a perimeter of a corresponding one of the first plurality of discrete openings. A plurality of conductive contacts is in the second plurality of discrete openings and is on the plurality of doped regions.

A solar cell is provided, including: a semiconductor substrate including a front surface and a rear surface arranged opposite to each other; an emitter located on the front surface of the semiconductor substrate; a front passivation layer located over the front surface of the semiconductor substrate; a tunneling layer located over the rear surface of the semiconductor substrate; a doped conductive layer located over a surface of the tunneling layer; a rear passivation layer located over a surface of the doped conductive layer; a front electrode in contact with the emitter; and a rear electrode in contact with the first doped conductive layer. The doped conductive layer includes a first doped conductive layer corresponding to a rear metallized region, and a second doped conductive layer corresponding to a rear non-metallized region. The first doped conductive layer has an oxygen content less than the second doped conductive layer.

A solar cell is provided, including a substrate having a first surface and a second surface opposite to each other, an emitter formed on the first surface of the substrate and including a textured structure on a side away from the first surface, a passivation structure formed on the textured structure, first electrodes penetrating the passivation structure and in electrical contact with the textured structure of the emitter, and conductive eutectic layers each formed between a respective first electrode and the emitter and including first conductive particles and second conductive particles. Each of the first conductive particles has a shape different from a shape of any of the second conductive particles. The first conductive particles and the second conductive particles have a first number, the first conductive particles have a second number, and a ratio of the second number to the first number in a range of 20% to 80%.

A solar cell is provided, including a substrate having a rear surface including P-type regions and N-type regions, first dielectric layers each formed over a N-type region, first doped polysilicon layers each formed on a first dielectric layer and doped with an N-type doping element, second dielectric layers each formed over a P-type region, second doped polysilicon layers each formed on a second dielectric layer and doped with a P-type doping element, a passivation layer formed over surfaces of the first and second doped polysilicon layers, and first and second electrodes penetrating the passivation layer. Each first electrode is electrically connected to a first doped polysilicon layer and each second electrode is electrically connected to a second doped polysilicon layer. A first roughness of a surface of a first doped polysilicon layer is greater than a second roughness of a surface of a second doped polysilicon layer.

In one aspect, a preparation method for a bifacial solar cell utilizes a method of deposition and then bombardment to form an intrinsic silicon layer, thus enhancing an ablation resistance of a solar cell, reducing a metal composite loss and a filing coefficient, and significantly improving an efficiency of an obtained solar cell. Moreover, in the bifacial solar cell of the present disclosure, compared with a second crystalline silicon doped layer, the intrinsic silicon layer has a higher number of SiH connected to mono-hydrogen atoms, a lower number of SiH.sub.2 connected to dihydrogen atoms, and fewer carrier recombination defects in the intrinsic silicon layer, thus improving field passivation performance.

The present disclosure relates to a polymeric antireflective coating film for a photoelectric device and a method of manufacturing the same. More specifically, the polymeric antireflective coating film includes a transparent polymer, and micro phosphor particles and oxide nanoparticles, wherein a textured surface of a three-dimensional (3D) structure is included on at least one surface thereof.

A protective coating for solar cells and the method of its making. The coating consists of four sub-coatings: the first, second, and the third polymer nanocomposite coatings and the optical anti-reflection coating on the top. The anti-reflection coating minimizes the reflection of the incident sun light and is made by embedding silica nanoparticles in the third coating. The third coating protects the solar cell for the low-orbit atomic oxygen and transmits the sunlight further down. The second polymer nanocomposite coating is composed of a colorless polymer embedded with the nanoparticles of a compound absorbing sun UV radiation and converting it into visible and NIR radiation suitable for generating electricity by the cell. The first nanocomposite layer is made of a colorless polymer nanocomposite blocking the residual harmful UV and atomic oxygen from reaching the cell and shortening its operational lifetime.