In one aspect, a preparation method for a double-sided solar cell includes: preparing a semi-finished product of the double-sided solar cell, the semi-finished product including a silicon wafer, and a P-type doped layer, a front passivation layer, and a front anti-reflection layer that are sequentially formed on a front surface of the silicon wafer; providing an opening corresponding to a front finger on a front surface of the semi-finished product, the opening extending through the front anti-reflection layer and the front passivation layer in sequence and exposing a surface of the P-type doped layer; and coating a non-fire-through paste in contact with the P-type doped layer through the opening, sintering the paste, to form the front finger. This preparation method can increase the open circuit voltage of the double-sided solar cell, and improve the conversion efficiency of double-sided solar cell.

Photovoltaic devices having bifacial enhancement are described herein.

A solar cell includes a semiconducting substrate, a first emitter, an insulating layer, and a second emitter. The semiconducting substrate includes a first surface and a second surface, and includes a first region and a second region. The first region includes a first sub-region and a second sub-region. The first sub-region is in contact with the second region. The first direction is perpendicular to the thickness direction of the semiconducting substrate. The first emitter is disposed on the first surface and in the first region. The insulating layer is disposed on the first emitter and in the first sub-region. The second emitter is disposed on the first surface. The second emitter includes a first sub-emitter and a second sub-emitter. The first sub-emitter is located on the second region. The second sub-emitter is disposed on the insulating layer. Electrical conduction exists between the first emitter and the first sub-emitter.

A solar cell and a manufacturing method thereof, and a photovoltaic system. The solar cell includes: a substrate layer including a first surface and a second surface arranged oppositely along a thickness direction thereof; a tunnel oxide layer, a first doped polysilicon layer, and a first passivation layer sequentially arranged on the first surface of the substrate layer in a direction gradually away from the substrate layer; and a first finger electrode layer, at least one of the first fingers being arranged in first connection holes, bottoms of the first connection holes being located in the first doped polysilicon layer, and the first fingers passing through the first connection holes corresponding thereto to be electrically connected to the first doped polysilicon layer; and in the first direction, widths of the first connection holes being all less than widths of the first fingers corresponding to the first connection holes. While ensuring good electrical connection, the solar cell causes less damage and recombination to a passivation structure of the solar cell, and has high photoelectric conversion efficiency.

A semiconductor substrate, including a back surface having N-type conductive regions and P-type conductive regions. The N-type conductive regions are provided with first non-pyramidal texture structures, and the P-type conductive regions are provided with second non-pyramidal texture structures. A top surface of the first non-pyramidal texture structure is a polygonal plane, and a top surface of the second non-pyramidal texture structure is a polygonal plane. A one-dimensional size of the top surface of the first non-pyramidal texture structure is less than a one-dimensional size of the top surface of the second non-pyramidal texture structure. The one-dimensional size of the top surface of the first non-pyramidal texture structure is in a range of 5 m to 12 m. The one-dimensional size of the top surface of the second non-pyramidal texture structure is in a range of 10 m to 40 m.

Increasing the power conversion efficiency of silicon (Si) photovoltaics is a key enabler for continued reductions in the cost of solar electricity. Disclosed herein is a multi-junction photovoltaic cell that does not utilize a conventional interconnection layer and instead places a wide bandgap oxide conductor, for example, a metal oxide such as TiO.sub.2, between a top light absorption layer having a relatively large bandgap and a bottom light absorption layer having a relatively small bandgap. The advantageous omission of a conventional interconnection layer between the two subcells is enabled by low contact resistivity between the top and bottom light absorbing layers provided by the wide bandgap oxide conductor. The absence of the conventional interconnect between the subcells significantly reduces both optical losses and processing steps. The disclosed photovoltaic cell may thus enable low-cost, high-efficiency multi-junction devices through less complex manufacturing processes and lower material costs.

Compositions of matter, downconversion layers including the compositions of matter, and devices including the compositions of matter are described. In an embodiment, the compositions of matter are downconversion materials configured to absorb a quantum of energy of a first energy and, in response, emit two or more quanta of energy of a second energy less than the first energy. Methods of making and depositing downconversion materials are also described. Downconversion precursor mixtures suitable for making downconversion materials and methods of making the same are also described.

In a method for manufacturing a solar cell panel according to an embodiment of the present invention, a step of forming an electrode comprises the steps of: forming a main electrode part on a conductive region; and forming a connection electrode part on the main electrode part by using a paste comprising metal particles having a first metal, a solder material having a second metal different from the first metal, and an adhesive material.

Some embodiments relate to photovoltaic shingle. A photovoltaic shingle comprises an encapsulated solar cell, a glass layer above the encapsulated solar cell, an anti-reflective layer above the glass layer, and a plurality of protrusions above the glass layer. The plurality of protrusions covers at least a portion of at least one of the glass layer, the anti-reflective layer, or any combination thereof, such that the anti-reflective coating is exposed between at least a portion of the plurality of protrusions.

A layered structure is provided for a solar cell having tunnel-oxide-passivated contacts. The layered structure includes at least one tunnel oxide layer and a c-SiCx layer, wherein x0.5. A solar cell having tunnel-oxide-passivated contacts is also provided. The solar cell includes at least one crystalline n-doped or p-doped silicon layer, and the layered structure having the tunnel-oxide passivated contacts. A method for producing a layered structure for a solar cell having tunnel-oxide-passivated contacts is additionally provided. The method includes providing a substrate layer comprising a silicon layer, depositing a tunnel oxide layer on the substrate layer, and depositing a u c-SiCx:H layer, which is n-doped or p-doped, on the tunnel oxide layer.