An image capture device includes a plurality of independently formed camera channels. Each of the plurality of independently formed camera channels includes a respective sensor, wherein the respective sensor includes circuitry that controls an integration time of the respective sensor, and a respective lens that receives incident light and transmits the incident light to the respective sensor without transmitting the incident light to respective sensor of other camera channels within the plurality of independently formed camera channels. Further, a processor that is communicatively coupled to the respective sensor of each of the plurality of independently formed camera channels. The processor is configured to receive respective images from the respective sensor of each of the plurality of independently formed camera channels, and form a combined image by combing each of the respective images.

A passive on-chip optical long-pass filter for removing residual pump photons at short wavelengths after nonlinear generation of photons. A thin layer (<100 nm) of amorphous or poly-crystalline silicon is deposited onto a section of a waveguide to absorb light with a wavelength shorter than the silicon bandgap wavelength of 1.1 m, while the nonlinearly generated light in longer wavelengths than the silicon bandgap wavelength propagates in the waveguide with a negligible absorption loss. The filter is applicable to attain an on-chip optical pump light rejection ratio exceeding 120 dB for nonlinear and quantum photonic chips. The filter is conceptually simple to design and can be fabricated by a CMOS process with potentially a high wafer-level scalability and manufacturability at a low cost. The filter can be realized in various integrated photonic platforms, including silicon carbide, silicon nitride, lithium niobate and aluminum nitride.

An optical device includes a nanostructure body which induces surface plasmon resonance when irradiated with light, an oxide layer which is in contact with the nanostructure body, an alloy layer which is in contact with the oxide layer and which is made of an alloy containing a first metal and a second metal that are different in work function from each other, and an n-type semiconductor which is in Schottky contact with the alloy layer.

An optical device includes a nanostructure body which induces surface plasmon resonance when irradiated with light, an oxide layer which is in contact with the nanostructure body, an alloy layer which is in contact with the oxide layer and which is made of an alloy containing a first metal and a second metal that are different in work function from each other, and an n-type semiconductor which is in Schottky contact with the alloy layer.

An electromagnetic radiation detector includes an InP substrate having a first surface opposite a second surface; a first InGaAs electromagnetic radiation absorber stacked on the first surface and configured to absorb a first set of electromagnetic radiation wavelengths; a set of one or more buffer layers stacked on the first InGaAs electromagnetic radiation absorber and configured to absorb at least some of the first set of electromagnetic radiation wavelengths; a second InGaAs electromagnetic radiation absorber stacked on the set of one or more buffer layers and configured to absorb a second set of electromagnetic radiation wavelengths; and an immersion condenser lens formed on the second surface and configured to direct electromagnetic radiation through the InP substrate and toward the first InGaAs electromagnetic radiation absorber and the second InGaAs electromagnetic radiation absorber.

Techniques are disclosed for optical imager devices, systems, and methods. In one example, an imaging system includes a focal plane array (FPA) and a light shield. The FPA includes a detector array configured to detect a first portion of electromagnetic radiation and generate a detector signal based on the first portion. The FPA further includes a readout circuit coupled to the detector array and configured to receive the detector signal. The light shield is coupled to the FPA and configured to block a second portion of the electromagnetic radiation. Related devices and methods are also provided.

Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an acitve region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

Disclosed are structures and methods of forming the structures so as to have a photodetector isolated from a substrate by stacked trench isolation regions. In one structure, a first trench isolation region is in and at the top surface of a substrate and a second trench isolation region is in the substrate below the first. A photodetector is on the substrate aligned above the first and second trench isolation regions. In another structure, a semiconductor layer is on an insulator layer and laterally surrounded by a first trench isolation region. A second trench isolation region is in and at the top surface of a substrate below the insulator layer and first trench isolation region. A photodetector is on the semiconductor layer and extends laterally onto the first trench isolation region. The stacked trench isolation regions provide sufficient isolation below the photodetector to allow for direct coupling with an off-chip optical fiber.

An object is to provide an optical modulator in which a light receiving element is disposed on a substrate configuring the optical modulator and which is capable of suppressing a decrease in the frequency bandwidth of the light receiving element even in a case in which two radiated lights from a combining part in a Mach-Zehnder type optical waveguide are received and monitored at the same time. The optical modulator includes a substrate 1, an optical waveguide including a Mach-Zehnder type optical waveguide formed in the substrate, and a modulation electrode (not illustrated) for modulating light waves that propagate through the optical waveguide, alight receiving element 5 is disposed to bridge over an output waveguide 24 configuring the Mach-Zehnder type optical waveguide so as to receive two radiated lights being radiated from a combining part in the Mach-Zehnder type optical waveguide, and, in the light receiving element, two or more light receiving areas (51 and 52) are formed apart from each other on a substrate of light receiving element 55.

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as holes, effectively increase the absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more. Their thickness dimensions allow them to be conveniently integrated on the same Si chip with CMOS, BiCMOS, and other electronics, with resulting packaging benefits and reduced capacitance and thus higher speeds.