Patent classifications
H10F77/407
INTEGRATED STRUCTURE OF WAVEGUIDE AND ACTIVE COMPONENT AND MANUFACTURING METHOD THEREOF
A manufacturing method for an integrated structure of a waveguide and an active component is proposed. The manufacturing method includes providing a substrate including a dielectric layer and a semiconductor layer, and the semiconductor layer includes a waveguide region, a transition region and an active component region; etching the semiconductor layer to form a plurality of waveguide trenches; depositing a waveguide material on the semiconductor layer to form a deposition layer, and the waveguide trenches are filled with the waveguide material; performing an ion implantation process on the semiconductor layer to form a first doped portion and a second doped portion; etching the waveguide region, the transition region and the active component region to form a waveguide structure, a transition structure and an active component structure; depositing a cover layer on the dielectric layer; forming two via holes and two contact pads in the cover layer.
Digital cameras with direct luminance and chrominance detection
An image capture device includes a plurality of independently formed camera channels. Each of the plurality of independently formed camera channels includes a respective sensor, wherein the respective sensor includes circuitry that controls an integration time of the respective sensor, and a respective lens that receives incident light and transmits the incident light to the respective sensor without transmitting the incident light to respective sensor of other camera channels within the plurality of independently formed camera channels. Further, a processor that is communicatively coupled to the respective sensor of each of the plurality of independently formed camera channels. The processor is configured to receive respective images from the respective sensor of each of the plurality of independently formed camera channels, and form a combined image by combing each of the respective images.
SEMICONDUCTOR PACKAGE
A semiconductor package includes a first die comprising an optical coupler, a second die bonded to the first die, and a substrate over the first die. The substrate includes a first portion, a second portion at least partially overlapped with the optical coupler from a top view, and a third portion between the first portion and the second portion. A first top surface of the first portion, a second top surface of the second portion and a third top surface of the third portion are at different surface levels.
Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules
Various optoelectronic modules are described that include an optoelectronic device (e.g., a light emitting or light detecting element) and a transparent cover. Non-transparent material is provided on the sidewalls of the transparent cover, which, in some implementations, can help reduce light leakage from the sides of the transparent cover or can help prevent stray light from entering the module. Fabrication techniques for making the modules also are described.
IMAGE PICKUP APPARATUS AND CAMERA MODULE
An image pickup apparatus includes an optical device, a transparent conductive film, an electrode pad, and a penetrating electrode. In the optical device, an optical element area for receiving light is formed on a first surface side of a substrate, and an external connection terminal is formed on a side of a second surface opposite to the first surface of the substrate. The transparent conductive film is formed to face the first surface of the substrate. The electrode pad is formed on the first surface of the substrate and configured to perform connection with a fixed potential. The penetrating electrode is connected to the electrode pad and formed to penetrate the substrate between the first surface and second surface. The transparent conductive film is connected to the electrode pad, and the penetrating electrode is connected to the external connection terminal on the side of the second surface of the substrate.
HYBRID ORGANIC-INORGANIC NANO-PARTICLES
The invention relates to a method of making hybrid organic-inorganic core-shell nano-particles, comprising the steps of a) providing colloidal organic particles comprising a synthetic polyampholyte as a template; b) adding at least one inorganic oxide precursor; and c) forming a shell layer from the precursor on the template to result in core-shell nano-particles. With this method it is possible to make colloidal organic template particles having an average particle size in the range of 10 to 300 nm; which size can be controlled by the comonomer composition of the polyampholyte, and/or by selecting dispersion conditions.
The invention also relates to organic-inorganic or hollow-inorganic core-shell nano-particles obtained with this method, to compositions comprising such nano-particles, to different uses of said nano-particles and compositions, and to products comprising or made from said nano-particles and compositions, including anti-reflective coatings and composite materials.
Opto-electric hybrid board
An opto-electric hybrid board includes opto-electric module portions respectively defined on opposite end portions of an elongated insulation layer, and an interconnection portion defined on a portion of the insulation layer between the opto-electric module portions and including an optical waveguide. A metal reinforcement layer extends over the opto-electric module portions into the interconnection portion. A portion of the metal reinforcement layer present in the interconnection portion has a smaller width than portions of the metal reinforcement layer present in the opto-electric module portions, and has a discontinuity extending widthwise across the metal reinforcement layer. This arrangement makes it possible to protect the optical waveguide from the bending and the twisting of the interconnection portion, while ensuring the flexibility of the interconnection portion including the optical waveguide.
Semiconductor device comprising an emitter of radiation and a photosensor and appertaining production method
The semiconductor device comprises a semiconductor substrate (1), a photosensor (2) integrated in the substrate (1) at a main surface (10), an emitter (12) of radiation mounted above the main surface (10), and a cover (6), which is at least partially transmissive for the radiation, arranged above the main surface (10). The cover (6) comprises a cavity (7), and the emitter (12) is arranged in the cavity (7). A radiation barrier (9) can be provided on a lateral surface of the cavity (7) to inhibit cross-talk between the emitter (12) and the photosensor (2).
LIGHT EMITTER AND LIGHT DETECTOR MODULES INCLUDING VERTICAL ALIGNMENT FEATURES
This disclosure describes various modules that can provide ultra-precise and stable packaging for an optoelectronic device such as a light emitter or light detector. The modules include vertical alignment features that can be machined, as needed, during fabrication of the modules, to establish a precise distance between the optoelectronic device and an optical element or optical assembly disposed over the optoelectronic device.
Semiconductor device, manufacturing method thereof, and electronic apparatus
A semiconductor device having a first semiconductor section including a first wiring layer at one side thereof; a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other; a conductive material extending through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication; and an opening, other than the opening for the conductive material, which extends through the first semiconductor section to the second wiring layer.