A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The active region is located between the first semiconductor structure and the second semiconductor structure. The active region includes a light-emitting region having N pair(s) of semiconductor stack(s). Each of the semiconductor stack includes a well layer and a barrier layer, in which N is a positive integer greater than or equal to 1. The well layer includes a first group III-V semiconductor material including indium with a first percentage of indium content. The barrier layer includes a second group III-V semiconductor material including indium with a second percentage of indium content. The first group III-V semiconductor material and the second group III-V semiconductor material further includes phosphorus. The second percentage of indium content is less than the first percentage of indium content.

A device for producing electrical current. In one embodiment, the device comprises a stack of epitaxial layers (from a bottom surface): a p-doped semiconductor reflector layer, a p-doped semiconductor emitter layer, an n-doped semiconductor base layer, and an n-doped semiconductor window layer. A radioisotope source, disposed above or in contact with an uppermost layer of the stack, produces radioisotope decay particles or gamma rays that impinge the stack. The electrical current is produced between the first and second conductive regions by action of the radioisotope decay particles or the gamma rays on the emitter and base layers.

A diode comprises a p-doped region, an n-doped region, and a light-sensitive intrinsic region sandwiched laterally between the p-doped region and the n-doped region in a direction transverse to a direction of light propagation in the diode. The p-doped region is made of a first material doped with a first type of dopant and the n-doped region is made of a third material doped with a second type of dopant. The first material includes Si or SiGe. The third material includes Si or SiGe. The intrinsic region is made of a second material, that includes Ge, GeSn, or SiGe. The intrinsic region has a maximal lateral extension between two lateral ends of the intrinsic region of equal to or below 400 nm. The p-doped region and the n-doped region are in-situ doped such that the intrinsic region is not doped when the diode is produced.

An electronic device including optical sensing with a concentric architecture and methods for operation thereof is disclosed. The concentric architecture can include light detector(s) arranged in a concentric manner around light emitter(s). In some examples, at least one light emitter can be located in the center of the device, and each light detector can be located the same separation distance from the light emitter. Each light detector can be arranged such that the separation distance from the centrally located light emitter can be greater than the separation distance from another light emitter. Examples of the disclosure further include a selective transparent layer overlaying the light detector(s). The selective transparent layer can include section(s) transparent to a first wavelength range and non-transparent to a second wavelength ranges. In some examples, the selective transparent layer can further include section(s) transparent to the second wavelength range.

The disclosed embodiments relate to an integrated circuit structure and methods of forming them in which photonic devices are formed on the back end of fabricating a CMOS semiconductor structure containing electronic devices. Doped regions associated with the photonic devices are formed using microwave annealing for dopant activation.

Light detection devices and related methods are provided. The devices may comprise a reaction structure for containing a reaction solution with a relatively high or low pH and a plurality of reaction sites that generate light emissions. The devices may comprise a device base comprising a plurality of light sensors, device circuitry coupled to the light sensors, and a plurality of light guides that block excitation light but permit the light emissions to pass to a light sensor. The device base may also include a shield layer extending about each light guide between each light guide and the device circuitry, and a protection layer that is chemically inert with respect to the reaction solution extending about each light guide between each light guide and the shield layer. The protection layer prevents reaction solution that passes through the reaction structure and the light guide from interacting with the device circuitry.

Semiconductor devices comprising a semiconductor edge filter, a first light absorbing region overlying the semiconductor edge filter and a second light absorbing region underlying the semiconductor edge filter are disclosed. The semiconductor edge filter has a high reflectivity over a first wavelength range absorbed by the overlying light absorbing region and a high transmission over a second wavelength range absorbed by the underlying light absorbing region.

The present disclosure relates to a photodiode and method of forming the photodiode. The photodiode includes a doped layer and an absorption region positioned on the doped layer. The absorption region includes a base region contacting the doped layer, a first facet region positioned on the base region, and a second facet region positioned on the first facet region. The first facet region includes (i) a first tapered surface and a second tapered surface extending from the base region and (ii) a first step region and a second step region extending laterally from the first tapered surface and the second tapered surface, respectively. The second facet region includes a third tapered surface extending from the first step region and a fourth tapered surface extending from the second step region.

An electromagnetic radiation detector pixel includes a set of epitaxial layers and a lens. The set of epitaxial layers defines an electromagnetic radiation absorber. The lens is directly bonded to the set of epitaxial layers.

In an embodiment, an optoelectronic component includes a structured region including a semiconductor body having a first semiconductor region and a second semiconductor region, which have different conductivities, a first main surface and a second main surface and at least one first delimiting surface and at least one second delimiting surface delimiting a recess, a protective layer, which is arranged on the at least one first delimiting surface and covers a junction between the first semiconductor region and the second semiconductor region in the recess, wherein the first main surface is not covered by the protective layer and the protective layer does not adjoin any further protective layer on a side facing the junction and on a side facing away from the junction, and wherein the protective layer is retracted from the first delimiting surface and the second delimiting surface or wherein the protective layer has an L-shape in cross-section.