Patent classifications
H10F77/42
INTELLIGENT SOLAR RACKING SYSTEM
According to one or more embodiments, an intelligent solar racking system is provided. The intelligent solar racking system includes a racking frame that receives and mechanically supports solar modules. The intelligent solar racking system includes sensors distributed throughout the racking frame. Each of the sensors detects and reports parameter data by generating output signals. The sensors include module sensors positioned to associate with each of the solar modules and detect a module presence as the parameter data for the solar modules. The intelligent solar racking system includes a computing device that receives, stores, and analyzes the output signals to determine and monitor operations of the intelligent solar racking system.
SOLAR CELL AND METHOD FOR PRODUCING THE SAME
Embodiments of the present disclosure relate to a solar cell and a method for producing the same. The solar cell includes: a substrate having a first textured surface, a plurality of sheet-shaped anti-reflection films, and a plurality of grid lines. A plurality of grid-line areas spaced from each other are formed on the first textured surface, and each grid-line area has a second textured surface. One or more sheet-shaped anti-reflection films of the plurality of sheet-shaped anti-reflection films are formed on a portion of the second textured surface of each grid-line area. Each grid line of the plurality of grid lines is formed on a respective grid-line area, and each grid line is in contact with the one or more sheet-shaped anti-reflection films and with a remaining portion of the second textured surface of the respective grid-line area not covered by any sheet-shaped anti-reflection films. grid linegrid line.
SOLAR CELL AND METHOD FOR PRODUCING THE SAME
Embodiments of the present disclosure relate to a solar cell and a method for producing the same. The solar cell includes: a substrate having a first textured surface, a plurality of sheet-shaped anti-reflection films, and a plurality of grid lines. A plurality of grid-line areas spaced from each other are formed on the first textured surface, and each grid-line area has a second textured surface. One or more sheet-shaped anti-reflection films of the plurality of sheet-shaped anti-reflection films are formed on a portion of the second textured surface of each grid-line area. Each grid line of the plurality of grid lines is formed on a respective grid-line area, and each grid line is in contact with the one or more sheet-shaped anti-reflection films and with a remaining portion of the second textured surface of the respective grid-line area not covered by any sheet-shaped anti-reflection films. grid linegrid line
THREE-DIMENSIONAL THIN FILM SEMICONDUCTOR SUBSTRATE WITH THROUGH-HOLES AND METHODS OF MANUFACTURING
A three-dimensional thin-film semiconductor substrate with selective through-holes is provided. The substrate having an inverted pyramidal structure comprising selectively formed through-holes positioned between the front and back lateral surface planes of the semiconductor substrate to form a partially transparent three-dimensional thin-film semiconductor substrate.
TARGET INTEGRATED CIRCUIT COMBINED WITH A PLURALITY OF PHOTOVOLTAIC CELLS
A microchip structure and a method for manufacturing thereof are provided. The microchip structure comprises a target integrated circuit (TIC) comprising a first surface and a first power contact at a first location on the first surface of the TIC, the TIC further comprising a second power contact at a second location on the first surface of the TIC; a plurality of photovoltaic (PV) diodes deposited on a first surface of a transparent substrate, each of the PV diodes having an anode coupled to an anode contact and a cathode coupled to a cathode contact, the transparent substrate is transparent to an electromagnetic frequency to which the PV diodes are sensitive; the cathode contact of a first PV diode of the PV diodes is bonded to the first power contact and the anode contact of a second PV diode of the PV diodes is bonded to the second power contact.
Solid-state imaging device
A solid-state imaging device includes unit pixels arrayed two dimensionally in a pixel area, wherein: a unit pixel disposed in a central region of the pixel area includes a first collecting element having a convex surface and a unit pixel in a region of the pixel area not including the central region includes a second collecting element having a convex surface and grooves having widths less than or equal to a wavelength of incident light; the second collecting element includes a sparse region and a dense region in which a density of formations of the grooves is higher than in the sparse region; and the sparse region is positioned closer to the central region of the pixel area than the dense region.
LIGHT TRAPPING OPTICAL STRUCTURE
A light trapping optical structure employing an optically transmissive layer with a plurality of light deflecting elements. The transparent layer is defined by opposing broad-area surfaces extending parallel to each other. The light deflecting elements deflect light propagating transversely through the optically transmissive layer at a sufficiently high bend angle with respect to a surface normal, above a critical angle of a Total Internal Reflection. The deflected light is retained by means of at least TIR in the system which allows for longer light propagation paths through a photoabsorptive layer that may be associated with the optically transmissive layer for an improved light absorption. The light trapping optical structure may further employ a focusing array of light collectors being pairwise associated with the respective light deflecting elements.
Photovoltaic interconnect wire
A photovoltaic interconnect wire includes a conductive base strip with grooves provided thereon, and the grooves are linear and/or curved strip-shaped grooves (3) arranged obliquely to a longitudinal direction of the conductive base strip. An inclination angle of 15 to 75 is present between each linear strip-shaped groove and the longitudinal direction of the conductive base strip, and between a tangent line of any point on the curve of a curved-shaped groove and the longitudinal direction of the conductive base strip. The photovoltaic soldering strip increases an output power of a solar cell assembly by increasing the total reflection proportion. It also ensures soldering fastness by adjusting flat regions of the base strip. Effective cross section loss of the conductive base strip is reduced by adjusting the angle of each groove, so as to minimize the confluence efficiency loss of the soldering strip.
Methods for producing photovolaic material and device able to exploit high energy photons
The present invention concerns methods for producing photovoltaic material and a device able to exploit high energy photons. The photovoltaic material is obtained from a conventional photovoltaic material having a top surface intended to be exposed to photonic radiation, having a built-in P-N junction delimiting an emitter part and a base part and comprising at least one area or region specifically designed, treated or adapted to absorb high energy or energetic photons, located adjacent or near at least one hetero-interface. According to the invention, this material is subjected to treatments resulting in the formation of at least one semiconductor based metamaterial field or region being created, as a transitional region of the or a hetero-interface, in an area located continuous or proximate to the or an absorption area or region for the energetic photons of the photonic radiation impacting said photovoltaic material.
RESIN-CONTAINING SOLAR CELL MODULE
A solar cell module includes solar cells. encapsulants are layered on surfaces of the solar cells. A glass substrate is layered on the encapsulants. The solar cell module further includes an epoxy resin-containing member. Each encapsulant includes the ultraviolet ray-absorbing member. The ultraviolet ray-absorbing member sets the transmittance to 1% or less at the wavelengths ranging from 300 to 360 nm.