A method for fabricating an image sensor comprises: forming an array of sensor elements on a sensor-wafer substrate; forming a readout circuit on the sensor-wafer substrate; forming a plurality of signal lines between the array of sensor elements and the readout circuit; forming a solid-state cooler between the array of sensor elements and the readout circuit; bonding a carrier-wafer substrate to an epitaxial structure of the sensor-wafer substrate; etching the carrier-wafer substrate in the thermal-barrier zone to form a carrier-wafer trench between the array of sensor elements and the readout circuit; reducing the thickness of the sensor-wafer substrate; and etching the sensor-wafer substrate in the thermal-barrier zone to form a sensor-wafer trench between the array of sensor elements and the readout circuit.

Disclosed are a BIPV-applicable high-power shingled photovoltaic module and a manufacturing method therefor, the module comprising: a solar panel having a shingled array structure; a first sealant stacked on the solar panel so as to protect the solar panel; a second sealant stacked under the solar panel in order to protect the solar panel; a front cover through which the sunlight passes, and which is stacked on the first sealant so as to protect the first sealant; and a first back sheet stacked under the second sealant in order to protect the solar panel from the outside environment, and thus aesthetic impression and reflectance reduction of a high-power shingled photovoltaic module are increased so that use as an external design element of a building is possible.

Systems for reducing dark current in a photodiode include a heater configured to heat a photodiode above room temperature. A reverse bias voltage source is configured to apply a reverse bias voltage to the heated photodiode to reduce a dark current generated by the photodiode.

Methods and systems for reducing dark current in a photodiode include heating a photodiode above room temperature. A reverse bias voltage is applied to the heated photodiode to reduce a dark current generated by the photodiode.

A semiconductor device includes: a processor having a heat sink mounted thereon; and an optical module having a heat transfer interposer, wherein the heat sink and the optical module are coupled to each other via the heat transfer interposer. And a semiconductor device includes: a semiconductor chip mounted on a substrate; a lead that covers the semiconductor chip; a heat sink installed on the lead; and an optical module coupled to the heat sink via a heat transfer interposer.

An image capture device includes an image sensor, a reading component, a timing generator, and a voltage regulator. The image sensor includes a temperature sensor configured to measure temperature measurements of the image sensor. The reading component is configured to read the temperature measurements from the temperature sensor. The timing generator is configured to apply an electronic shutter pulse to the image sensor. The voltage regulator is coupled between the temperature sensor and the reading component for regulating increased voltage at the reading component resulting from the electronic shutter pulse.

A system and method for blocking heat from reaching an image sensor in a three dimensional stack with a semiconductor device. In an embodiment a heat sink is formed in a back end of line process either on the semiconductor device or else on the image sensor itself when the image sensor is in a backside illuminated configuration. The heat sink may be a grid in either a single layer or in two layers, a zig-zag pattern, or in an interleaved fingers configuration.

Methods and systems for reducing dark current in a photodiode include heating a photodiode above room temperature. A reverse bias voltage is applied to the heated photodiode to reduce a dark current generated by the photodiode.

The present disclosure relates to a semiconductor photomultiplier comprising a substrate; an array of photosensitive cells formed on the substrate that are operably coupled between an anode and a cathode. A set of primary bus lines are provided each being associated with a corresponding set of photosensitive cells. A secondary bus line is coupled to the set of primary bus lines. An electrical conductor is provided having a plurality of connection sites coupled to respective connection locations on the secondary bus line for providing conduction paths which have lower impedance than the secondary bus line.

Methods and systems for reducing dark current in a photodiode include heating a photodiode above room temperature. A reverse bias voltage is applied to the heated photodiode to reduce a dark current generated by the photodiode.