A semiconductor substrate, including a back surface having N-type conductive regions and P-type conductive regions. The N-type conductive regions are provided with first non-pyramidal texture structures, and the P-type conductive regions are provided with second non-pyramidal texture structures. A top surface of the first non-pyramidal texture structure is a polygonal plane, and a top surface of the second non-pyramidal texture structure is a polygonal plane. A one-dimensional size of the top surface of the first non-pyramidal texture structure is less than a one-dimensional size of the top surface of the second non-pyramidal texture structure. The one-dimensional size of the top surface of the first non-pyramidal texture structure is in a range of 5 m to 12 m. The one-dimensional size of the top surface of the second non-pyramidal texture structure is in a range of 10 m to 40 m.

The present disclosure provides a double-sided passivated contact cell, where a front side and a rear side of the double-sided passivated contact cell each are provided with a tunnel layer, a doped polysilicon layer, and a passivation layer sequentially from an inside to an outside; and for the doped polysilicon layer at the front side and the doped polysilicon layer at the rear side, one of the doped polysilicon layer at the front side and the doped polysilicon layer at the rear side is a boron and carbon co-doped polysilicon layer, and the other of the doped polysilicon layer at the front side and the doped polysilicon layer at the rear side is a phosphorus and carbon co-doped polysilicon layer. The present disclosure further provides a preparation method of the double-sided passivated contact cell.

Disclosed is solar cell, a photovoltaic module, and a method for manufacturing a photovoltaic module. The solar cell includes a substrate, first busbars and second busbars arranged on the substrate, first fingers connected to the first busbars, and second fingers connected to the second busbars. The first busbars and the second busbars have opposite polarities. The first fingers have a same polarity as the first busbars, and the second fingers have a same polarity as the second busbars. The substrate is provided with busbar pits. At least part of the first and second busbars are located in the busbar pits. Depths of the busbar pits range from 30 m to 50 m. Along a thickness direction of the substrate, ratios of the depths of the busbar pits to heights of the first busbars and/or the second busbars range from 10:3 to 6:5.

The present disclosure pertains to the field of back contact cell technologies, and particularly relates to a hybrid passivation back contact cell and a fabrication method thereof, the hybrid passivation back contact cell including: an N-type doped silicon substrate having a light receiving surface and a back surface, and a first semiconductor layer and a second semiconductor layer which are arranged on the back surface, wherein the second semiconductor layer includes an intrinsic silicon layer and a P-type doped silicon layer sequentially arranged in an outward direction perpendicular to the back surface, and the first semiconductor layer includes a tunneling oxide layer and an N-type doped silicon crystal layer sequentially arranged in the outward direction perpendicular to the back surface.

Thermocompression bonding approaches for foil-based metallization of non-metal surfaces of solar cells, and the resulting solar cells, are described. For example, a solar cell includes a substrate and a plurality of alternating N-type and P-type semiconductor regions disposed in or above the substrate. A plurality of conductive contact structures is electrically connected to the plurality of alternating N-type and P-type semiconductor regions. Each conductive contact structure includes a metal foil portion disposed in direct contact with a corresponding one of the alternating N-type and P-type semiconductor regions.

A solar cell is provided, including a substrate having a first surface and a second surface opposite to each other, an emitter formed on the first surface of the substrate and including a textured structure on a side away from the first surface, a passivation structure formed on the textured structure, first electrodes penetrating the passivation structure and in electrical contact with the textured structure of the emitter, and conductive eutectic layers each formed between a respective first electrode and the emitter and including first conductive particles and second conductive particles. Each of the first conductive particles has a shape different from a shape of any of the second conductive particles. The first conductive particles and the second conductive particles have a first number, the first conductive particles have a second number, and a ratio of the second number to the first number in a range of 20% to 80%.

A semiconductor light receiving device (1) has a light receiving portion (6) with a light absorbing layer (4) on a first surface (2a) side of a semiconductor substrate (2) transparent to incident light in an infrared range for optical communications, a reflecting portion (11) in a region where light that was incident on the light receiving portion (6) and passed through the light absorbing layer (4) is reached on a second surface (2b) side opposite the first surface (2a) to reflect the light toward the second surface (2b), and end surfaces (2c, 2d) of the semiconductor substrate (2), where light reflected by the reflecting portion (11) and reflected by the second surface (2b) reaches, are formed as a rough surface having roughness with a height equal to or greater than the wavelength of the incident light.

The present invention discloses a back contact solar cell. The back contact solar cell includes a semiconductor substrate having a front surface and a rear surface; a first conductive type semiconductor region having a first conductive type and a second conductive type semiconductor region having a second conductive type at an interval on the rear surface of the semiconductor substrate. Furthermore, the rear surface of the semiconductor substrate has a texturing structure at the interval between the first conductive type semiconductor region and the second conductive type semiconductor region.

To impart an re properties without reducing the amount of transmitted light, a method for processing a surface of light-transmitting-glass accord o the present invention comprises a blasting step of ejecting abrasive grains with particle sizes of #800 to #3000 average particle diameter 14 m to 4 m) such as WA (white alundum: high-purity alumina) having higher hardness than that of the glass onto a light-receiving surface of the glass having light-transmitting property to be processed for forming indentations and protrusions in the light-receiving surface of the glass, an lasting step, a hydrofluoric acid treatment step of immersing the light-receiving surface of the glass into a hydrofluoric acid solution in 10% to 20% concentration for 30 to 600 seconds thereby increase a height (amplitude) of indentations and protrusions of the surface of light-transmitting-glass.

The invention relates to a method of making hybrid organic-inorganic core-shell nano-particles, comprising the steps of a) providing colloidal organic particles comprising a synthetic polyampholyte as a template; b) adding at least one inorganic oxide precursor; and c) forming a shell layer from the precursor on the template to result in core-shell nano-particles. With this method it is possible to make colloidal organic template particles having an average particle size in the range of 10 to 300 nm; which size can be controlled by the comonomer composition of the polyampholyte, and/or by selecting dispersion conditions.

The invention also relates to organic-inorganic or hollow-inorganic core-shell nano-particles obtained with this method, to compositions comprising such nano-particles, to different uses of said nano-particles and compositions, and to products comprising or made from said nano-particles and compositions, including anti-reflective coatings and composite materials.