A packaging structure, a preparation method, and a camera module are provided. The packaging structure includes a substrate module, and a light emitting unit and a light receiving unit located on the substrate of the substrate module. The substrate module defines first channels and second channels. Two ends of each first channel extend to the substrate and the non-photosensitive area of the light receiving unit, respectively. A first conductive layer is formed on an inner wall of each first channel to form a first hollow conductive channel, which is electrically connected to the substrate and the non-photosensitive area. Two ends of each second channel extend to the substrate and the light emitting unit, respectively. A second conductive layer is formed on an inner wall of each second channel to form a second hollow conductive channel, which is electrically connected to the substrate and the light emitting unit.

Photoelectric conversion device includes first region of first conductivity type arranged in semiconductor layer having first second surfaces, second region of second conductivity type arranged between the second surface and the first region and forming avalanche photodiode, separation region of the second conductivity type arranged between the first and second surfaces to surround the second region, contact region of the second conductivity type contacted to the separation region, first contact plug connected to the first region, and second contact plug connected to the contact region. The second region has shape of rectangle, and the second contact plug is arranged in diagonal direction of the rectangle. Distance between center of the first contact plug and center of the second contact plug is larger than distance between center of the second region and the center of the second contact plug.

A modular photovoltaic system adapted for collecting light rays from a solar light source to generate electrical current, the system having a light-tracking solar collector adapted to collect the light rays, an edge-lit photovoltaic array, and a transport conduit adapted to transport the light rays to the edge-lit photovoltaic array. The edge-lit photovoltaic array has a plurality of edge-lit photovoltaic panels, each having a transparent diffusing pane positioned between two backing panels with inwardly directed photovoltaic surfaces. Each edge-lit photovoltaic panel perpendicularly contacts a lateral light distributor attached to the transport conduit, causing the transparent diffusing pane to illuminate the photovoltaic surfaces to generate electrical current. The light-tracking solar collector is adapted to rotate to remain oriented toward the solar light source.

An apparatus includes a package structure. The package structure includes a chip, a conductive structure over the chip, a molding structure surrounding and underneath the chip, and a first passivation layer over the conductive structure. The chip includes an optical component and a chip conductive pad. The conductive structure is electrically coupled to the chip conductive pad. The conductive structure has a planar portion substantially in parallel with an upper surface of the chip. The first passivation layer has a first opening defined therein. The first opening exposes a portion of the planar portion. The package structure is configured to receive an electrical coupling through the first opening in the first passivation layer.

A semiconductor structure includes a silicon substrate, a protection layer, an electrical pad, an isolation layer, a redistribution layer, a conductive layer, a passivation layer, and a conductive structure. The silicon substrate has a concave region, a step structure, a tooth structure, a first surface, and a second surface opposite to the first surface. The step structure and the tooth structure surround the concave region. The step structure has a first oblique surface, a third surface, and a second oblique surface facing the concave region and connected in sequence. The protection layer is located on the first surface of the silicon substrate. The electrical pad is located in the protection layer and exposed through the concave region. The isolation layer is located on the first and second oblique surfaces, the second and third surfaces of the step structure, and the tooth structure.

A photodiode includes a p-type ohmic contact and a p-type substrate in contact with the p-type ohmic contact. An intrinsic layer is formed over the substrate and including a III-V material. A transparent II-VI n-type layer is formed on the intrinsic layer and functions as an emitter and an n-type ohmic contact.

A semiconductor light receiving device includes a substrate, a semiconductor fine line waveguide provided on the substrate, and a light receiving circuit that is provided on the substrate and that absorbs light propagating through the semiconductor fine line waveguide. The light receiving circuit includes a p type first semiconductor layer, a number of second semiconductor mesa structures provided on the p type first semiconductor layer in such a manner that an n type second semiconductor layer is provided on top of an i type second semiconductor layer, a p side electrode connected to the p type first semiconductor layer in a location between the second semiconductor mesa structures, and an n side electrode connected to the n type second semiconductor layer. The refractive index and the optical absorption coefficient of the second semiconductor layers are greater than the refractive index and the optical absorption coefficient of the first semiconductor layer.

A packaged chip assembly with a semiconductor substrate, a semiconductor device integrally formed on or in the substrate's top surface, and first bond pads at the substrate's top surface electrically coupled to the semiconductor device. A second substrate includes a first aperture and one or more second apertures extending therethrough, second and third bond pads at the second substrate's top and bottom surfaces, respectively, and conductors electrically coupled to the second and third bond pads. The semiconductor substrate's top surface is secured to the second substrate's bottom surface such that the semiconductor device is aligned with the first aperture, and each of the first bond pads is aligned with one of the second apertures. A plurality of wires are each electrically connected between one of the first bond pads and one of the second bond pads and each passing through one of the one or more second apertures.

An electronic device mounting substrate includes: a first wiring substrate shaped in a rectangular frame, an interior of the rectangular frame constituting a first through hole; a second wiring substrate shaped in a rectangular frame or plate, the second wiring substrate being disposed so as to overlie a lower surface of the first wiring substrate and be electrically connected to the first wiring substrate; a metallic plate disposed so as to overlie a lower surface of the second wiring substrate so that the second wiring substrate is sandwiched between the metallic plate and the first wiring substrate; and a lens holder secured to an outer periphery of the metallic plate. A frame interior of the first wiring substrate, or a frame interior of each of the first wiring substrate and the second wiring substrate, constitutes an electronic device mounting space.

An integrated optical sensor module includes an optical sensor die having an optical sensing area on its first surface, and an application-specific integrated circuit (ASIC) die arranged over the first surface of the optical sensor die. A hole in the ASIC die is at least partially aligned with the optical sensing area such that at least some of the light passing through the hole may contact the optical sensing area. The hole through the ASIC die can be configured to receive an optical fiber, lens structure, or other optical element therein.