High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.

A self-balancing optical position sensitive detector includes a pair of spaced apart, parallel, longitudinally extending doped regions on a first surface on a front side of a substrate 16 of opposite doping type with contact pads on the front side at respective ends of a first doped region of the pair. A voltage source applies a potential difference between the contact pads of the first doped region. On the front side, a contact pad of the second doped region of the pair provides an analog output signal representative of a longitudinal position of a center of gravity of an incident light pattern along the doped regions without external circuitry processing the output signal to obtain a readout of the longitudinal position. A resistive line may directly overly, abut and be in contact with at least a portion of the first doped region. A conductive line may directly overly, abut and be in contact with at least a portion of the second doped region. No backside contact or processing of the substrate is required or employed.

An electronic device may have image transport layer material such as coherent fiber bundle material or Anderson localization material. The image transport layer material may overlap optical components. Optical sensor components can emit and/or detect light passing through the image transport layer material. Optical components such as light-emitting diodes may emit light through image transport layers. An image from a display may pass through an image transport layer. Infrared light-emitting diodes, infrared photodetectors, and/or other optical sensor components may be used to form a two-dimensional optical touch sensor that is configured to gather touch input from an external object such as a finger of a user. The optical touch sensor may operate through an image transport layer.

The present invention is directed to a position sensing detector made of a photodiode having a semi insulating substrate layer; a buffered layer that is formed directly atop the semi-insulating substrate layer, an absorption layer that is formed directly atop the buffered layer substrate layer, a cap layer that is formed directly atop the absorption layer, a plurality of cathode electrodes electrically coupled to the buffered layer or directly to the cap layer, and at least one anode electrode electrically coupled to a p-type region in the cap layer. The position sensing detector has a photo-response non-uniformity of less than 2% and a position detection error of less than 10 m across the active area.

A photo detecting device comprising: a substrate; a plurality of photoelectric conversion elements provided to the substrate and configured to output a detection signal corresponding to light with which the photoelectric conversion elements are irradiated; at least one or more light emitting elements provided to the substrate; and a control circuit configured to set a wavelength of light output from the light emitting element by controlling an electric current flowing through the light emitting element.

An optoelectronic device includes a pixel. The pixel is formed by: a first semiconductor region; a second semiconductor region of a conductivity type different from the first conductivity type, resting on the first region; a photodiode resting on the second region, the photodiode comprising a third semiconductor region, the third region being in contact with the second region and being separated from the first region by the second region; and a first conductive and insulated element extending in the second region. A biasing circuit is configured to bias the first conductive and insulated element by a first voltage during a first operating step to allow the passing of charges from the third region to the first region.

The present invention relates to a micro-nano structure sensitive to a laser beam in a specific direction, including a substrate, wherein an insulating layer is fixedly disposed on the substrate, the insulating layer is provided with two silicon nanowires parallel to each other and having the same shape and size, lead-out nanowires are arranged at both ends of each of the silicon nanowires and are connected with a potentiometer, and a near-field coupling effect occurs between the silicon nanowires and the substrate when laser light irradiates the silicon nanowires, and one silicon nanowire closer to a laser light source is completely suppressed and the other silicon nanowire farther away from the laser light source maintains brightness. The present invention enables precise detection of a laser signal at a specific angle and non-contact signal transmission in a specific direction. The present invention relates to a micro nano structure sensitive to a laser beam in a specific direction. The micro nano structure comprises a substrate, wherein an insulating layer is fixedly arranged on the substrate; and two silicon wires, which are parallel to each other and are in the same shape and size, are arranged on the insulating layer, and wires are led out from two ends of each silicon wire and are connected to potential meters. When laser light irradiates the silicon wires, a near field coupling effect is generated between the silicon wires and the substrate; and one silicon wire close to a laser light source is completely inhibited, and the other silicon wire far away from the laser light source maintains the brightness thereof. By means of present invention, a laser signal at a certain specific angle can be accurately detected, and non contact signal transmission can be carried out in a specific direction.

A light receiving element includes a plurality of pixels, each pixel includes a photoelectric conversion unit that generates carriers according to an amount of received light; a first conductor portion is disposed inside a first insulator that provides insulation between adjacent pixels; a second conductor portion is disposed on an outer edge side of a light receiving region of the photoelectric conversion unit and has an opening region; and a charge accumulation region corresponds to the opening region and is disposed further on an outer edge side than the second conductor portion.