The invention provides an article of manufacture, and methods of designing and making the article. The article permits or prohibits waves of energy, especially photonic/electromagnetic energy, to propagate through it, depending on the energy band gaps built into it. The structure of the article may be reduced to a pattern of points having a hyperuniform distribution. The point-pattern may exhibit a crystalline symmetry, a quasicrystalline symmetry or may be aperiodic. In some embodiments, the point pattern exhibits no long-range order. Preferably, the point-pattern is isotropic. In all embodiments, the article has a complete, TE- and TM-optimized band-gap. The extraordinary transmission phenomena found in the disordered hyperuniform photonic structures of the invention find use in optical micro-circuitry (all-optical, electronic or thermal switching of the transmission), near-field optical probing, thermophotovoltaics, and energy-efficient incandescent sources.

Provided are a method of manufacturing a quantum-dot photoactive-layer including: alternately depositing an amorphous silicon compound layer and a silicon-rich compound layer containing conductive impurities and an excess of silicon based on a stoichiometric ratio on a silicon substrate to form a composite multi-layer; and heat treating the composite multi-layer to form a plurality of silicon quantum-dots in a matrix corresponding to a silicon compound, wherein an amorphous silicon layer containing the conductive impurities is formed at least one time instead of the silicon-rich compound layer, and a quantum-dot photoactive-layer manufactured using the method as described above.

In an embodiment a method includes providing a plurality of radiation-emitting semiconductor chips configured to emit primary radiation of a first wavelength range, applying a converter on the plurality of radiation-emitting semiconductor chips, the converter configured to emit secondary radiation of a second wavelength range, applying a mirror layer sequence arranged downstream of the converter, the mirror layer sequence configured to reflect the primary radiation and transmit the secondary radiation and singulating the plurality of radiation-emitting semiconductor chips in order to produce optoelectronic components, wherein the converter is applied on the plurality of radiation-emitting semiconductor chips by spray coating, and wherein the mirror layer sequence is applied on the converter by sputtering, atomic layer deposition and/or plasma-enhanced chemical vapor deposition (PECVD).

A wafer for fabricating a unit pixel is provided. The wafer includes a transparent substrate, and a light blocking layer disposed on the transparent substrate. The light blocking layer includes a plurality of unit pixel regions and at least one observation region. Each of the unit pixel regions has a mounting region for mounting a light emitting device, and the observation region includes the mounting region for mounting the light emitting device and an auxiliary pattern disposed around the mounting region.

Methods for fabricating optically active quantum memories into quantum-grade diamond thin films and then bonding them to semiconductor substrates are described. Semiconductor substrates are optically and electronically functionalized in preparation for using a flip-chip bonding technique to bond the functionalized substrates to overgrown diamond thin films that host color centers. By purposefully growing quantum-grade diamond thin films and implanting them with color centers separately from fabrication processes that functionalize the substrates, the high quality, purity, and crystallinity of the thin films are preserved, while also allowing for further customization of the types of color centers that are implanted into the diamond.

A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a bulk silicon substrate, an oxide layer, a patterned polycrystalline silicon layer and a patterned epitaxial layer. The oxide layer is disposed above the bulk silicon substrate, the patterned polycrystalline silicon layer is disposed above the oxide layer, and the patterned epitaxial layer is disposed above the patterned polycrystalline silicon layer. The patterned epitaxial layer has an optoelectronic component and a control circuit. The optoelectronic component and the control circuit are spatially isolated from each other due to the patterned polycrystalline silicon layer.