A light emitting device including first, second, and third light emitting stacks each including first and second conductivity type semiconductor layers, a first lower contact electrode in ohmic contact with the first light emitting stack, and second and third lower contact electrodes respectively in ohmic contact with the second conductivity type semiconductor layers of the second and third light emitting stacks, in which the first lower contact electrode is disposed between the first and second light emitting stacks, the second and third lower contact electrodes are disposed between the second and third light emitting stacks, and the first, second, and third lower contact electrodes include transparent conductive oxide layers.

Light sources including one or more light emitting diodes (LEDs) comprise: a primary down converter material on the one or more LEDs; and a roughened down converter material on the one or more LEDs. The down converter material may comprise a polycrystalline ceramic plate of a phosphor material. A method of manufacturing a light source comprises: measuring a baseline color point distribution of a baseline light source, and a primary down converter material in the absence of any laser-modified down converter material; preparing a baseline color point distribution graph; identifying one or more sections of the primary down converter material whose corresponding LEDs contribute to deviating from a tuned color point distribution; and applying a roughening laser treatment to prepare one or more sections of roughened down converter material, and thereby prepare a light source having the tuned color point distribution.

Embodiments provide a method for processing an optoelectronic device, wherein the method includes providing a functional semiconductor layer stack with a conductive layer and hard mask layer located on the conductive layer. Both hard mask and conductive layer are structured, and a protective layer is arranged on sidewalls of the conductive layer. Then two dry etching and a wet etching process are performed to obtain an optoelectronic device. Portions of the hard mask layer on the conductive layer remain on the functional layer stack and form an integral part of the device.

Disclosed are an LED having a multi-series junction structure and improved light characteristics and a method of manufacturing the same. An LED includes a substrate, a buffer layer deposited on the substrate, a first n type semiconductor layer, a first active layer, and a first p type semiconductor layer sequentially deposited on the buffer layer, a tunnel junction layer deposited on the p type semiconductor layer, a second n type semiconductor layer, a second active layer, and a second p type semiconductor layer sequentially deposited on the tunnel junction layer, ITO formed on the second p type semiconductor layer, and a passivation layer deposited on the side or front of the first n type semiconductor layer to the ITO. Etching is performed from the ITO to one location of the first n type semiconductor layer so that the ITO to the first n type semiconductor layer have a mesa structure.

Disclosed are a semiconductor epitaxial structure, a preparation method thereof, and a light-emitting diode. The semiconductor epitaxial structure includes a buffer layer, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer that are sequentially arranged on a substrate. The material of the buffer layer is Al.sub.xIn.sub.yGa.sub.(1-x-y)N, wherein 0x and 0y. The buffer layer is doped with carbon impurities. The doping concentration of the carbon impurities in the buffer layer is lower than 9E17 atoms/cm.sup.3. The present invention grows the buffer layer using a high-temperature growth method. The buffer layer has a lower defect density and a lower content of carbon impurities, making it more possible to facilitate enhancement of the lattice quality of the subsequent epitaxial structure and improve the luminous efficiency and anti-aging capability of the light-emitting diode.

A display device includes a first barrier layer disposed on a substrate, a lower metal layer disposed on the first barrier layer, and a semiconductor layer disposed on the lower metal layer. In a cross-sectional view, the lower metal layer includes a first part spaced apart from the semiconductor layer and a second part closer to the semiconductor layer, in a plan view, an area of the second part is smaller than an area of the first part, and a side of the semiconductor layer and a side of the second part, which is adjacent to the semiconductor layer, are parallel to each other.

Devices and methods of manufacturing light emitting devices including selective area epitaxy deposited N-polar semiconductors. The devices and methods can be utilized to realize high-quality, high-performance and/or high-efficiency nanowire based light emitting devices.

A method of manufacturing a light emitting device includes: providing a structure including: a first substrate, a plurality of light emitting parts arranged apart from one another on an upper surface of the first substrate, a metal layer disposed on an upper surface side of the first substrate and covering at least the light emitting parts, and a protective member covering the metal layer; bonding a second substrate to the protective member; exposing the lower surfaces of the light emitting parts by removing the first substrate; bonding a light transmissive member to the lower surfaces of the light emitting parts via a bonding member; removing the second substrate; creating exposed portions of the light transmissive member; removing the metal layer; and dividing the light transmissive member into individual pieces at the exposed portions.

A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes: forming a base including multiple light-emitting mesa regions; forming light-emitting mesas on the base, and the light-emitting mesas being disposed in an array and formed in the multiple light-emitting mesa regions; forming a first bonding layer containing first conductive pillars, and at least a part of the first conductive pillars being disposed on top surfaces of the light-emitting mesas; forming a driver backplane including a second bonding layer, and the second bonding layer containing second conductive pillars corresponding to the at least a part of the first conductive pillars; and detachably bonding the first bonding layer and the second bonding layer, and the at least a part of the first conductive pillars are electrically connected with a part of or all of the second conductive pillars in a one-to-one correspondence.

A method of manufacturing a semiconductor apparatus includes: forming a two-dimensional material layer on a substrate layer, wherein the substrate layer includes a nitrogen (N)-polar nitride compound material; forming a plurality of through-holes in the two-dimensional material layer along a thickness direction of the two-dimensional material layer by performing a heat treatment at a process temperature in a process gas atmosphere; epitaxially growing a first semiconductor layer along the thickness direction in the plurality of through-holes of the two-dimensional material layer; and performing epitaxial lateral over-growing, horizontally along a plane perpendicular to the thickness direction, of the first semiconductor layer on the two-dimensional material layer.