A method (100) is provided for making light emitting mesa structures on a semiconductor wafer, each mesa structure comprising a first doped layer, a second doped layer, and an emission layer in-between. The method comprises the steps of providing (101) a first mask for assigning a shape of a sidewall of the mesa structures, etching (102) from the first doped layer according to the first mask up to the emission layer, providing (103) a second mask for assigning a shape of a trench between two adjacent mesa structures, and etching (104) the trench through the emission layer according to the second mask. In this regard, the trench is nonadjacent to the sidewall of the mesa structures.

In an embodiment an optoelectronic semiconductor device includes a semiconductor layer sequence having an active region oriented perpendicular to a growth direction of the semiconductor layer sequence and a passivation regrowth layer oriented at least in part oblique to the active region, wherein the passivation regrowth layer is located directly on the semiconductor layer sequence and runs across a lateral boundary of the active region, wherein the semiconductor layer sequence and the passivation regrowth layer are based on the same semiconductor material system, and wherein the semiconductor material system is InGaAlP or AlInGaAsP.

To prepare a semiconductor substrate in which a first semiconductor part is formed above a main substrate, divide the first semiconductor part into a plurality of base semiconductor parts by forming a plurality of trenches in the first semiconductor part, and form a compound semiconductor part above at least one of the plurality of base semiconductor parts.

An ultraviolet LED device and a manufacturing method therefor is provided according to an embodiment of the disclosure. The ultraviolet LED device includes: a substrate (1), an AlN buffer layer (2), an n-AlGaN layer (3), a quantum well region (4), an electron blocking layer (5), a p-type GaN layer (6), and an etched trench region (7). The AlN buffer layer (2) is disposed on the substrate (1). The n-AlGaN layer (3) is disposed on the AlN buffer layer (2). The quantum well region (4) is disposed on the n-AlGaN layer (3). The electron blocking layer (5) is disposed on the quantum well region (4). The p-type GaN layer (6) is disposed on the electron blocking layer (5). The etched trench region (7) is etched downwards from the p-type GaN layer (6). The etched trench region (7) is obtained by etching from the p-type GaN layer (6) along a direction pointing toward the substrate (1). An etching angle of the etched trench region (7) is greater than 0 degree and less than or equal to 90 degrees.

An optoelectronic device (100) comprises a semiconductor light-emitting component (101) capable of emitting light at a first wavelength, a cavity (107) filled with a semiconductor wavelength conversion material (103) disposed in a path of the light emitted by the semiconductor light-emitting component (101) for converting the first wave-length into a second wavelength and a first multilayer interference reflector (105) provided at a bottom of the cavity (107) directed to the light-emitting component (101). The first multilayer interference reflector (105) is configured to be transmitive for the first wavelength and reflective for the second wavelength and a second multilayer interference reflector (106) is provided at a top (106) and sidewalls (106) of the cavity (107). The second multilayer interference reflector (106) is configured to be transmitive for the second wavelength and to be reflective for the first wavelength. An associated method of making the optoelectronic device is also provided.

In an embodiment a micro semiconductor LED structure includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, which is arranged on the first semiconductor layer, an active layer sequence including a first edge layer of the first conductivity type facing the first semiconductor layer and a second edge layer of the second conductivity type facing away from the first semiconductor layer and a third semiconductor layer of the second conductivity type, which is arranged at least on the active layer sequence, wherein the second semiconductor layer has at least one window, which penetrates through the second semiconductor layer from a side of the second semiconductor layer facing away from the first semiconductor layer toward the first semiconductor layer, wherein the first semiconductor layer has a recess in a region of the window, and wherein the active layer sequence is arranged at least in the recess.

A micro light-emitting element includes a substrate and at least one micro light-emitting diode. Each micro light-emitting diode includes a semiconductor epitaxial stacked layer, which includes a first-type semiconductor layer, an active layer and a second-type semiconductor layer, and comprises a first surface and a second surface; the first surface is located on a side near the first-type semiconductor layer, the second surface is located on a side near the second-type semiconductor layer, and the first surface faces towards the substrate; and an adhesive film layer, which is located between the substrate and the semiconductor epitaxial stacked layer. An etching protective layer is disposed between the adhesive film layer and the first surface. The micro light-emitting element can reduce damage to the semiconductor epitaxial stacked layer during a residual adhesive removing process after laser lifting-off of each micro light-emitting diode, thus improving reliability of the micro light-emitting element.

The present invention provides a method for manufacturing a bonded semiconductor wafer, the method includes the steps of epitaxially growing an etching stop layer on a starting substrate, epitaxially growing a compound semiconductor functional layer on the etching stop layer, forming an isolation groove for forming a device in the compound semiconductor functional layer by a dry etching method, etching on a surface of the isolation groove by a wet etching method, bonding a visible light-transmissive substrate of a different material from a material of the compound semiconductor functional layer to the compound semiconductor functional layer via a visible light-transmissive thermosetting bonding member, and obtaining a bonded semiconductor wafer by removing the starting substrate from the compound semiconductor functional layer bonded to the visible light-transmissive substrate. This can provide a method for manufacturing a bonded semiconductor wafer that can make a device with suppressed generation of decrease in brightness when the device is produced on a substrate.

A method for manufacturing a light-emitting device includes steps of providing a substrate, the substrate having a first surface and a second surface that are opposite to each other; forming a nucleation layer on the first surface of the substrate by deposition, the nucleation layer having an upper surface that is uneven; forming a plurality of first voids, the plurality of first voids extending in a direction from the nucleation layer to the substrate, each of the plurality of first voids having an aspect ratio that is greater than 1, and a diameter that is no greater than 300 nm; forming an Al.sub.xGa.sub.1-xN layer on the nucleation layer to form an even surface, x>0.5; and forming a semiconductor epitaxial structure on the Al.sub.xGa.sub.1-xN layer. A light-emitting device manufactured by the above method is also provided.

A display device includes a first epitaxial structure vertically stacked, a first light emitting element including a second epitaxial structure and a third epitaxial structure, a second light emitting element spaced apart from the first light emitting element and including the first epitaxial structure, a first passivation layer arranged to surround a sidewall of the first light emitting element, and a second passivation layer arranged to surround a sidewall of the second light emitting element. Each of the first epitaxial structure, the second epitaxial structure, and the third epitaxial structure may include a structure in which a first semiconductor layer of a first conductivity type, a carrier blocking layer, an active layer, and a second semiconductor layer of a second conductivity type are sequentially stacked.