Embodiments of a light-emitting diode (LED) device are disclosed. In some embodiments, the LED device includes a first LED device and one or more other LED devices mounted to the first LED device. By mounting the other LED devices to the first LED device, the LED devices are arranged in a stacked configuration. This allows for better light mixing of the light emitted by the various LED devices since the LED devices are at least partially aligned with one another. Different manners of stacking the LED devices are disclosed. The scope of the disclosure includes the specific embodiments disclosed as well as other combinations depending on the color mixing profile that is desired.

Semiconductor devices and more particularly edge-emitting semiconductor devices and related methods are disclosed. Exemplary edge-emitting semiconductor devices include LED edge emitters. Electrical connections for edge-emitting devices may be provided along certain device edges with opposing edges forming light-emitting edges. LED edge emitters may be vertically arranged and assembled together to form LED arrays with reduced pitch. Related methods include bonding multiple wafer-level structures, such as LED wafers, together, followed by separation techniques that result in individual edge emitters or groupings of edge emitters in the form of LED arrays.

A chip structure is provided. The chip structure includes: a chip wafer unit and a color conversion layer unit arranged on a light-exit side of the chip wafer unit. The chip wafer unit includes a plurality of sub-pixel light-emitting function layers. The color conversion layer unit includes color conversion layers arranged on the light-exit side of the chip wafer unit. The chip structure further includes: an attaching layer, arranged between the chip wafer unit and the color conversion layer unit and configured to attach the chip wafer unit and the color conversion layer unit.

A light sensor structure and a packaging method thereof are disclosed. The light sensor structure comprises a light emitting element, a light sensing element, an opaque molding substance, an insulation layer and a connection layer. The opaque molding substance encloses the light emitting element and the light sensing element, and the opaque molding substance is provided with a via. The insulation layer is disposed on the bottom surface of the light emitting element, and the insulation layer is provided with a number of connection pads on a side away from the light emitting element and the light sensing element. The connection pads are electrically connected to the contacts on the bottom surface of the light emitting element through the connection layer, and the connection pads are electrically connected to the contacts on the light sensing surface of the light sensing element through the connection layer and the via.

Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

The present disclosure provides a method for separating a bonded wafer, including separating a support from a bonded wafer.

A method for manufacturing an LED structure includes forming a first semiconductor layer on a first substrate; performing a first implantation operation to form a first implanted region and a first non-implanted region in a second doping semiconductor layer of the first semiconductor layer; forming a second semiconductor layer on the first semiconductor layer; performing a second implantation operation to form a second implanted region and a second non-implanted region in a fourth doping semiconductor layer of the second semiconductor layer; performing a first etch operation to remove a portion of the second semiconductor layer and expose at least the first non-implanted region; performing a second etch operation to expose a plurality of contacts of a driving circuit formed in the first substrate; and electrically connecting the first non-implanted region and the second non-implanted region with the plurality of contacts.

A polychrome wafer structure (100,200,200) comprising a plurality of structured first epitaxial dies (102) having first light-emitting devices (107) configured to emit light of a first color, at least a plurality f structured second epitaxial dies (103) having second light-emitting devices (107) configured to emit light of a second color. The plurality of the structured first epitaxial dies (102) and the plurality of the structured second epitaxial dies (103) are bonded on a target wafer (507) with a plurality of common monolithic integrated circuits in a manner that the at least one first die and the at least one second die is connected to common monolithic integrated (101) one circuit for simultaneously driving at least one first epitxial die (102) having light-emitting device (107) and at least one second epitaxial die (103) having light-emitting device (107) by the respective one common monolithic integrated circuit (101).

Horizontal Cavity Surface Emitting Lasers (HCSELs) with angled facets may be fabricated by a chemical or physical etching process, and the epitaxially grown semiconductor device layers may be transferred through a selective etch and release process from their original epitaxial substrate to a carrier wafer.

Ions are implanted into a first wafer through a top side, generating an ion damaged layer underneath the substrate film of the first wafer. A stress inducing layer is applied on a surface on the top side of the first wafer on one of the ion implanted side and the opposite side. The substrate film is separated from the first wafer at the ion damaged layer. the separated substrate film is bonded to a second wafer at a surface on one of a first side and a second side that this opposite of the first side of the second wafer to form an engineered wafer.