To prepare a semiconductor substrate in which a first semiconductor part is formed above a main substrate, divide the first semiconductor part into a plurality of base semiconductor parts by forming a plurality of trenches in the first semiconductor part, and form a compound semiconductor part above at least one of the plurality of base semiconductor parts.

A chip structure and a method for manufacturing the same, and a display apparatus. The chip structure includes a chip wafer unit and a color conversion unit disposed on a light exit side of the chip wafer unit. The color conversion unit includes a base substrate; the base substrate includes a body portion and an edge portion surrounding the body portion; the edge portion includes original layers and modified layers alternately arranged along a first direction; and in the edge portion, layers located on outermost two sides in the first direction are both original layers, the first direction being perpendicular to a surface of the base substrate away from the chip wafer unit. A light reflectivity of the original layers and a light reflectivity of the modified layers are different.

A mounting substrate includes a ceramic substrate having two or more through holes, metal members disposed in respective through holes, and a bonding material disposed between the ceramic substrate and each of the metal members in the through holes. A portion of an upper surface, a portion of a lower surface, and a portion of lateral surfaces of each of the metal members are exposed through the ceramic substrate. The portion of the lateral surfaces and the portion of the lower surface of each of the metal members, exposed through the ceramic substrate, are continuous with each other. The portion of the lateral surfaces of each of the metal members, exposed through the ceramic substrate, is coplanar with a lateral surface of the ceramic substrate. The ceramic substrate is disposed so as to surround an outer periphery of each of the metal members in a top view.

The present invention relates to a method for manufacturing a semiconductor device using a semiconductor growth template, and to a method for manufacturing a semiconductor light-emitting device or a power semiconductor device by using a semiconductor growth template including an ultra-thin type sapphire seed layer.

The present invention relates to an epitaxial die and a chip die for a semiconductor light-emitting device, and a manufacturing method thereof, wherein only one of two electrodes is exposed to the outside, and a process of forming a positive ohmic contact electrode (p-ohmic contact electrode) or a negative ohmic contact electrode (n-ohmic contact electrode) is completed in an epitaxial die manufacturing step so as to achieve dramatic thickness reduction and easy reduction of the chip die size, thereby improving the light output.

A light-emitting device includes: a light-emitting element; a light-transmissive member disposed on an upper surface and a lateral surface of the light-emitting element; and a light diffusion member disposed on an upper surface of the light-transmissive member. A lateral surface of the light-transmissive member is exposed from the light diffusion member. A distance between an upper surface of the light-emitting element and an upper surface of the light-transmissive member is greater than a distance between a lateral surface of the light-emitting element and a lateral surface of the light-transmissive member. An upper surface of the light-transmissive member includes one or more first protruding portions. The light diffusion member is in contact with a surface of the one or more first protruding portions.

A light-emitting diode structure and a manufacturing method thereof are provided. The light-emitting diode structure includes a substrate, a light-emitting diode chip, a wavelength conversion layer, and a short-pass filter coating. The light-emitting diode chip is disposed on the substrate in a flip-chip manner and is used to emit a first light beam. The wavelength conversion layer is disposed on the light-emitting diode chip and is used to convert a part of the first light beam into a second light beam. A wavelength of the first light beam is less than a wavelength of the second light beam. The short-pass filter coating is disposed between the wavelength conversion layer and the light-emitting diode chip, allowing the first light beam to pass through and reflecting the second light beam.