A display device includes a substrate in which a plurality of sub pixels are defined; a pair of low potential power lines are in a sub pixel of the plurality of sub pixels; and a plurality of light emitting diodes that overlap an area between the pair of low potential power lines. Each of the plurality of light emitting diodes includes a first semiconductor layer; an emission layer; a second semiconductor layer; a first insulating film that encloses side surfaces of the first semiconductor layer, the emission layer, and the second semiconductor layer; a side electrode on the first insulating film; and a first electrode that is in contact with a bottom surface of the first semiconductor layer and a lower part of the side electrode.

A method for manufacturing a light-emitting device includes providing a layered body including a wavelength conversion layer, a light-transmissive layer disposed above the wavelength conversion layer, and a semiconductor layer disposed above the light-transmissive layer, separating the semiconductor layer into a plurality of semiconductor portions above the wavelength conversion layer by removing a part of the semiconductor layer; and singulating the layered body into a plurality of light-emitting devices by cleaving the wavelength conversion layer along a portion where the part of the semiconductor layer is removed.

A display device includes: a substrate having a display area and a non-display area; and a pixel in each of a pixel area in the display area. Each of the pixels includes: an insulating layer on the substrate and having an opening; first and second electrodes on the insulating layer and spaced apart from each other; a plurality of light emitting elements in the opening; a first contact electrode electrically connecting one end of the light emitting elements and the first electrode to each other; a second contact electrode electrically connecting another end of the light emitting elements and the second electrode to each other; a first insulating pattern on the first contact electrode; and a second insulating pattern on the second contact electrode. The first insulating pattern and the second insulating pattern are on the same layer and spaced apart from each other.

An optical projection device and a method of producing the optical projection device are described. The optical projection device includes: a plurality of LEDs (light-emitting diodes), the LEDs each including a semiconductor mesa laterally spaced apart from one another by a grid structure. Each of the semiconductor mesas includes an n-type material and a p-type material adjoining at least partly the n-type material. The grid structure at least partly laterally surrounds at least the n-type material of each of the semiconductor mesas. The grid structure includes a conductive material that electrically interconnects the n-type material of the semiconductor mesas. The grid structure is configured to block optical crosstalk between light emitted by the LEDs.

A display device may include: a base layer including a plurality of islands, at least one first bridge configured to connect the islands in a first direction, and at least one second bridge configured to connect the islands in a second direction; and at least one pixel including a plurality of sub-pixels in the base layer. Each of the sub-pixels may include: a first electrode and a second electrode in one island of the islands and spaced from each other; a third electrode and a fourth electrode in one bridge of the at least one first bridge and the at least one second bridge and spaced from each other; at least one first light emitting element between the first electrode and the second electrode; and at least one second light emitting element between the third electrode and the fourth electrode.

A method includes forming a light emitting chip on a surface of a growth substrate; forming a transfer film layer on a transient substrate; forming an electrode fixing structure on a side of the transfer film layer away from the transient substrate, and opening a through-wire hole in the transfer film layer adjacent to the electrode fixing structure; making the growth substrate opposite to the transient substrate; making the light emitting transfer structure opposite to a driving backplane; and forming a connection wire, a portion of the connection wire is connected to the binding-point electrode through the through-wire hole, and another portion of the connection wire is connected to the electrode fixing structure.

A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAl.sub.xN.sub.y material at least partially contiguous with the semiconductor structure. The TiAl.sub.xN.sub.y material can be TiAl.sub.3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAl.sub.xN.sub.y material, such that the TiAl.sub.xN.sub.y material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.

Direct-bonded LED arrays and applications are provided. An example process fabricates a LED structure that includes coplanar electrical contacts for p-type and n-type semiconductors of the LED structure on a flat bonding interface surface of the LED structure. The coplanar electrical contacts of the flat bonding interface surface are direct-bonded to electrical contacts of a driver circuit for the LED structure. In a wafer-level process, micro-LED structures are fabricated on a first wafer, including coplanar electrical contacts for p-type and n-type semiconductors of the LED structures on the flat bonding interface surfaces of the wafer. At least the coplanar electrical contacts of the flat bonding interface are direct-bonded to electrical contacts of CMOS driver circuits on a second wafer. The process provides a transparent and flexible micro-LED array display, with each micro-LED structure having an illumination area approximately the size of a pixel or a smallest controllable element of an image represented on a high-resolution video display.

A display apparatus including a display substrate, light emitting devices disposed on the display substrate, circuit electrodes disposed between the light emitting devices and the display substrate, and a transparent layer covering the light emitting devices and the circuit electrodes, in which at least one of the light emitting devices includes a first LED sub-unit configured to emit light having a first wavelength, a second LED sub-unit adjacent to the first LED sub-unit and configured to emit light having a second wavelength, a third LED sub-unit adjacent to the second LED sub-unit and configured to emit light having a third wavelength, and a substrate disposed on the third LED sub-unit, in which a difference in refractive indices between the transparent layer and air is less than a difference in refractive indices between the substrate and a semiconductor layer of the third LED sub-unit.

A pixel may include first and second areas sectioned from each other in a first direction; 1-1-th to 4-1-th electrodes successively arranged in the first area in a second direction intersecting the first direction; 1-2-th to 4-2-th electrodes successively arranged in the second area in the second direction; light emitting elements disposed between two adjacent electrodes of the 1-1-th to 4-1-th electrodes of the first area; light emitting elements disposed between two adjacent electrodes of the 1-2-th to 4-2-th electrodes of the second area; a first conductive pattern disposed in the first area, and electrically connecting the 2-1-th and 3-1-th electrodes; a second conductive pattern disposed over the first and second areas, and electrically connecting the 4-1-th electrode of the first area with the 1-2-th electrode of the second area; and a third conductive pattern disposed in the second area and electrically connecting the 2-2-th and 3-2-th electrodes.