A semiconductor LED includes p-doped, n-doped, and active layers, and has anode and cathode electrical contacts. The p-doped layer has a refractive index of n.sub.P and a nonzero thickness less than 10.sub.0/n.sub.P. The LED is less than 30.sub.0/n.sub.P wide, and the anode electrical contact is in direct contact with only a central region of the p-doped layer that is separated from the LED side surfaces by more than .sub.0/2n.sub.P. The LED width, the separation of the anode contact from the LED side surface, and the p-doped layer thickness can result in one or more of (i) increased Purcell factor, (ii) increased extraction efficiency, (iii) increased overall light output efficiency, or (iv) narrowed light output angular distribution.

The disclosure provides a method of manufacturing a semiconductor chip. The method of manufacturing the semiconductor chip includes the following steps: providing a first carrier; transferring a semiconductor die to the first carrier, wherein the semiconductor die has a surface and another surface opposite to each other; forming a filling layer on a side surface of the semiconductor die; forming a reflective layer on the semiconductor die and the side surface, wherein the reflective layer includes a first part and a second part, the first part is disposed on the surface of the semiconductor die, and the second part is disposed on the filling layer; and forming a conductive layer on the another surface of the semiconductor die. The method of manufacturing the semiconductor chip of the disclosure may directly perform detection after the semiconductor chip is transferred.

A display element includes a first spacer, a second spacer, at least one first electrode, a second electrode, at least one LED structure, a reflective layer, a first transparent molding layer and a transparent conductive layer. The second spacer is located on one side of the first spacer. The first electrode is surrounded by the first spacer. The second electrode is surrounded by the second spacer. The LED structure is located on the first electrode. The reflective layer is located on a sidewall of the first spacer facing the LED structure. The first transparent molding layer is located on the reflective layer and surrounds the LED structure. The transparent conductive layer is located on the top surface of the second semiconductor layer and the top surface of the first transparent molding layer, and extends to the second electrode.

A display element includes a substrate, a three-colored LED light emitting structure, a first insulation layer, a first active device layer, at least one conductive via and at least one electrode. The three-colored LED light emitting structure is located on the substrate. The first insulation layer is located on the fourth semiconductor layer. The first active device layer is located on the first insulation layer, and the first active device layer includes at least one transistor. The conductive via extends from the first active device layer to and electrically connects at least one of the first semiconductor layer, the second semiconductor layer, the third semiconductor layer and the fourth semiconductor layer. The electrode is located upon the first active device layer.

A display device having a pad area and a display area is provided. The display device includes: a substrate; a pad structure on the substrate in the pad area; and a display element part on the substrate in the display area. The pad structure includes a first pad pattern, a second pad pattern on the first pad pattern, and a third pad pattern on the second pad pattern, and the display element part includes a light emitting element configured to emit light in a display direction. The second pad pattern has a first area and a second area, the second pad pattern and the third pad pattern do not contact each other in the first area, and the second pad pattern and the third pad pattern contact each other in the second area.

Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

The present invention provides a display device using a semiconductor light-emitting element and a manufacturing method therefor, the display device transferring semiconductor light-emitting elements on a temporary substrate, and then directly implementing, through a stack process, the structure of a wiring substrate on the temporary substrate on which the semiconductor light-emitting elements are arrayed, thereby enabling the semiconductor light-emitting elements and the wiring substrate to be electrically connected.

A display device and a method of fabricating a display device. The display device includes a substrate including an emission area and a subarea adjacent to the emission area, a bank disposed in the emission area of the substrate, a height difference compensation pattern disposed in the subarea of the substrate, a first electrode and a second electrode that are disposed on the bank, the first electrode and the second electrode being spaced apart from each other, and a light-emitting element disposed in the emission area, between the first electrode and the second electrode.

A display device includes a base substrate, a partitioning wall on the base substrate, wherein the partitioning wall includes a first partitioning wall, and a second partitioning wall on the first partitioning wall, and a light emitting element spaced from the partitioning wall and located in a space surrounded by the partitioning wall in a plan view. The first partitioning wall and the light emitting element include a same material. The second partitioning wall includes a transparent conductive oxide.

A method for manufacturing an LED structure includes forming a first semiconductor layer on a first substrate; performing a first implantation operation to form a first implanted region and a first non-implanted region in a second doping semiconductor layer of the first semiconductor layer; forming a second semiconductor layer on the first semiconductor layer; performing a second implantation operation to form a second implanted region and a second non-implanted region in a fourth doping semiconductor layer of the second semiconductor layer; performing a first etch operation to remove a portion of the second semiconductor layer and expose at least the first non-implanted region; performing a second etch operation to expose a plurality of contacts of a driving circuit formed in the first substrate; and electrically connecting the first non-implanted region and the second non-implanted region with the plurality of contacts.