This specification discloses a converter element and light emitting devices including the converter element. The converter element is monolithic with at least two layers, where one layer is more porous than the other layer. The converter element may be integrated with a reflector layer, such as by metallization. The layer of the converter structure that is denser and having a smoother surface may be the one that is metallized, while the more porous layer is closer to the laser. The porosity enhances light extraction while the smoother surface decreases a loss of reflectivity at the reflector-phosphor interface. The converter element may be used in a laser based light emitting device.

A metallic structure for an optical semiconductor device, including a base body having disposed thereon at least in part metallic layers in the following order; a nickel or nickel alloy plated layer, a gold or gold alloy plated layer, and a silver or silver alloy plated layer, wherein the silver or silver alloy plated layer has a thickness in a range of 0.001 m or more and 0.01 m or less.

A chip structure is provided. The chip structure includes: a chip wafer unit and a color conversion layer unit arranged on a light-exit side of the chip wafer unit. The chip wafer unit includes a plurality of sub-pixel light-emitting function layers. The color conversion layer unit includes color conversion layers arranged on the light-exit side of the chip wafer unit. The chip structure further includes: an attaching layer, arranged between the chip wafer unit and the color conversion layer unit and configured to attach the chip wafer unit and the color conversion layer unit.

A patterning method of quantum dots, the method includes the steps of coating with a mixture containing quantum dots and a curable resin on a substrate to obtain a resin layer, ejecting a curing agent in a pattern shape on the resin layer by an inkjet method, performing a curing treatment to cure the portion of the resin layer where the curing agent was ejected, and removing an uncured portion of the resin layer with a solvent.

The present invention provides a display device using a semiconductor light-emitting element and a manufacturing method therefor, the display device transferring semiconductor light-emitting elements on a temporary substrate, and then directly implementing, through a stack process, the structure of a wiring substrate on the temporary substrate on which the semiconductor light-emitting elements are arrayed, thereby enabling the semiconductor light-emitting elements and the wiring substrate to be electrically connected.

A display device includes a base substrate, a partitioning wall on the base substrate, wherein the partitioning wall includes a first partitioning wall, and a second partitioning wall on the first partitioning wall, and a light emitting element spaced from the partitioning wall and located in a space surrounded by the partitioning wall in a plan view. The first partitioning wall and the light emitting element include a same material. The second partitioning wall includes a transparent conductive oxide.

A display apparatus includes a color filter substrate, a first encapsulation layer, a first bank layer, wavelength selective dimming patterns, color conversion patterns, a second encapsulation layer, a driving circuit substrate, a second bank layer and light emitting components. The wavelength selective dimming patterns are disposed in at least a portion of first openings of the first bank layer. The color conversion patterns are disposed in the first openings and on the wavelength selective dimming patterns. One wavelength selective dimming pattern includes a base material and scattering particles. The wavelength selective dimming pattern has a thickness within a range of 2 m to 10 m in a direction perpendicular to the color filter substrate. A volume ratio of the scattering particles to the wavelength selective dimming pattern falls within a range of 0.5% to 4.5%. Diameters of the scattering particles fall within a range of 80 nm to 200 nm.

A method of manufacturing a light emitting device is provided, the method at least includes the following steps: a substrate is provided, a light emitting unit is bonded on the substrate, an insulating layer is formed on the substrate so that at least a part of the light emitting unit is enclosed by the insulating layer, and a collimator corresponding to the light emitting unit is formed on the substrate after the insulating layer is formed.

A method for manufacturing a light-emitting device includes providing a layered body including a wavelength conversion layer, a light-transmissive layer disposed above the wavelength conversion layer, and a semiconductor layer disposed above the light-transmissive layer, separating the semiconductor layer into a plurality of semiconductor portions above the wavelength conversion layer by removing a part of the semiconductor layer; and singulating the layered body into a plurality of light-emitting devices by cleaving the wavelength conversion layer along a portion where the part of the semiconductor layer is removed.

A display device includes a first substrate, a transistor disposed on the first substrate, a light emitting device connected to the transistor, an encapsulation layer covering the light emitting device, a plurality of banks disposed to overlap the encapsulation layer in a plan view and partitioning a first emission area, a second emission area, and a third emission area, a first color conversion layer disposed in the first emission area, a second color conversion layer disposed in the second emission area, and a transmission layer disposed in the third emission area. A thickness of at least one of the first color conversion layer or the second color conversion layer is greater than a thickness of the plurality of banks.