H10H20/0363

METHOD OF MANUFACTURING SEMICONDUCTOR CHIP
20250234677 · 2025-07-17 · ·

The disclosure provides a method of manufacturing a semiconductor chip. The method of manufacturing the semiconductor chip includes the following steps: providing a first carrier; transferring a semiconductor die to the first carrier, wherein the semiconductor die has a surface and another surface opposite to each other; forming a filling layer on a side surface of the semiconductor die; forming a reflective layer on the semiconductor die and the side surface, wherein the reflective layer includes a first part and a second part, the first part is disposed on the surface of the semiconductor die, and the second part is disposed on the filling layer; and forming a conductive layer on the another surface of the semiconductor die. The method of manufacturing the semiconductor chip of the disclosure may directly perform detection after the semiconductor chip is transferred.

METALLIC STRUCTURE FOR OPTICAL SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING THE SAME, AND OPTICAL SEMICONDUCTOR DEVICE
20250002783 · 2025-01-02 · ·

A metallic structure for an optical semiconductor device, including a base body having disposed thereon at least in part metallic layers in the following order; a nickel or nickel alloy plated layer, a gold or gold alloy plated layer, and a silver or silver alloy plated layer, wherein the silver or silver alloy plated layer has a thickness in a range of 0.001 m or more and 0.01 m or less.

METHOD FOR PRODUCING AN OPTOELECTRONIC ASSEMBLY
20250006543 · 2025-01-02 ·

In an embodiment a method for producing an optoelectronic assembly includes providing at least one component of the optoelectronic assembly, providing a source carrier with a functional material on a lower face of the source carrier facing the at least one component, detaching a part of the functional material by irradiation via a laser beam through an upper face of the source carrier facing away from the at least one component, attaching the detached part of the functional material to a side of the at least one component facing the source carrier and completing the optoelectronic assembly, wherein the source carrier comprises cavities, each cavity being filled with the functional material.

UNIT PIXEL HAVING LIGHT EMITTING DEVICE, METHOD OF FABRICATING THE SAME, AND DISPLAYING APPARATUS HAVING THE SAME
20240413135 · 2024-12-12 ·

A unit pixel is provided. The unit pixel includes a transparent substrate, a first light blocking layer disposed on the transparent substrate and having windows that transmit light, an adhesive layer covering the first light blocking layer, a plurality of light emitting devices disposed on the adhesive layer to be arranged on the windows, and a second light blocking layer covering side surfaces of the light emitting devices.

Method of manufacturing a light emitting device
20240413263 · 2024-12-12 · ·

A method of manufacturing a light emitting device is provided, the method at least includes the following steps: a substrate is provided, a light emitting unit is bonded on the substrate, an insulating layer is formed on the substrate so that at least a part of the light emitting unit is enclosed by the insulating layer, and a collimator corresponding to the light emitting unit is formed on the substrate after the insulating layer is formed.

Optical projection device having a grid structure
12191285 · 2025-01-07 · ·

An optical projection device and a method of producing the optical projection device are described. The optical projection device includes: a plurality of LEDs (light-emitting diodes), the LEDs each including a semiconductor mesa laterally spaced apart from one another by a grid structure. Each of the semiconductor mesas includes an n-type material and a p-type material adjoining at least partly the n-type material. The grid structure at least partly laterally surrounds at least the n-type material of each of the semiconductor mesas. The grid structure includes a conductive material that electrically interconnects the n-type material of the semiconductor mesas. The grid structure is configured to block optical crosstalk between light emitted by the LEDs.

Display device

A display device includes: a plurality of light emitting elements on a first substrate; a second substrate facing the first substrate; a partition wall on one surface of the second substrate facing the first substrate, and including a plurality of openings; a plurality of color filters in the plurality of openings; wavelength conversion layers on the plurality of color filters, respectively, and to convert wavelengths of light emitted from the plurality of light emitting elements; and an adhesive layer adhering the first substrate and the second substrate to each other. The partition wall includes a silicon single crystal.

Emitter and method for emitting light

An emitter and a method for emitting light are described. The emitter has a substrate with a substrate surface and at least one LED element arranged on the substrate surface for generating the light to be emitted. An active cooling unit for cooling the at least one LED element has at least one cooling channel. The at least one cooling channel is arranged on the substrate surface in a beam path of at least one portion of the light to be emitted, which can be generated by means of the at least one LED element, for redirecting the light to be emitted.

Light-emitting substrate and method for manufacturing the same, and display apparatus

A light-emitting substrate includes a transparent substrate; a first metal light-shielding layer, a wiring layer and light-emitting devices. The first metal light-shielding layer is disposed on the transparent substrate. The wiring layer is disposed on a side of the first metal light-shielding layer away from the transparent substrate, and the wiring layer includes circuit traces and pads. Orthographic projections of the circuit traces and the pads on the transparent substrate are all located within an orthographic projection of the first metal light-shielding layer on the transparent substrate. The light-emitting devices are disposed on a side of the wiring layer away from the transparent substrate, and electrically connected to some of the pads; and orthographic projections of the light-emitting devices on the transparent substrate are located within the orthographic projection of the first metal light-shielding layer on the transparent substrate.

MICROLENS SUBSTRATE, DISPLAY DEVICE AND METHOD FOR MANUFACTURING MICROLENS SUBSTRATE

A microlens substrate, a display device and a method for manufacturing a microlens substrate are provided. The microlens substrate includes: a base; a first lens pattern disposed on a side of the base and including a plurality of first microlenses distributed at intervals; a second lens pattern disposed on a side of the first lens pattern and including a plurality of second microlenses distributed at intervals, where an orthographic projection of at least one of the plurality of second microlens on the base is located between two orthographic projections of two adjacent first microlenses on the base.