The disclosure provides a method of manufacturing a semiconductor chip. The method of manufacturing the semiconductor chip includes the following steps: providing a first carrier; transferring a semiconductor die to the first carrier, wherein the semiconductor die has a surface and another surface opposite to each other; forming a filling layer on a side surface of the semiconductor die; forming a reflective layer on the semiconductor die and the side surface, wherein the reflective layer includes a first part and a second part, the first part is disposed on the surface of the semiconductor die, and the second part is disposed on the filling layer; and forming a conductive layer on the another surface of the semiconductor die. The method of manufacturing the semiconductor chip of the disclosure may directly perform detection after the semiconductor chip is transferred.

Semiconductor devices and more particularly edge-emitting semiconductor devices and related methods are disclosed. Exemplary edge-emitting semiconductor devices include LED edge emitters. Electrical connections for edge-emitting devices may be provided along certain device edges with opposing edges forming light-emitting edges. LED edge emitters may be vertically arranged and assembled together to form LED arrays with reduced pitch. Related methods include bonding multiple wafer-level structures, such as LED wafers, together, followed by separation techniques that result in individual edge emitters or groupings of edge emitters in the form of LED arrays.

Disclosed are an antioxidant, a backlight module and a manufacturing method thereof. The antioxidant includes a film-forming component and a volatilization-suppressing additive. The film-forming component includes at least one of a substituted or unsubstituted acrylic resin, isopropanolamine, and imidazoline, and a boiling point of the volatilization-suppressing additive is greater than that of the film-forming component.

A display element includes a substrate, a three-colored LED light emitting structure, a first insulation layer, a first active device layer, at least one conductive via and at least one electrode. The three-colored LED light emitting structure is located on the substrate. The first insulation layer is located on the fourth semiconductor layer. The first active device layer is located on the first insulation layer, and the first active device layer includes at least one transistor. The conductive via extends from the first active device layer to and electrically connects at least one of the first semiconductor layer, the second semiconductor layer, the third semiconductor layer and the fourth semiconductor layer. The electrode is located upon the first active device layer.

A method for fabricating a single pixel micro LED device for a display panel includes providing a substrate having a pixel driver and fabricating an LED structure layer stacked on top of the substrate. The method further includes bonding the substrate and the LED structure layer together by a bonding layer. The LED structure layer is electrically connected to the pixel driver via the bonding layer. In some embodiments, before bonding the substrate and the LED structure layer, the method includes coating a reflection layer on the LED structure layer. In some embodiments, the method includes patterning the LED structure layer to form a red light LED.

A metallic structure for an optical semiconductor device, including a base body having disposed thereon at least in part metallic layers in the following order; a nickel or nickel alloy plated layer, a gold or gold alloy plated layer, and a silver or silver alloy plated layer, wherein the silver or silver alloy plated layer has a thickness in a range of 0.001 m or more and 0.01 m or less.

In an embodiment a method for producing an optoelectronic assembly includes providing at least one component of the optoelectronic assembly, providing a source carrier with a functional material on a lower face of the source carrier facing the at least one component, detaching a part of the functional material by irradiation via a laser beam through an upper face of the source carrier facing away from the at least one component, attaching the detached part of the functional material to a side of the at least one component facing the source carrier and completing the optoelectronic assembly, wherein the source carrier comprises cavities, each cavity being filled with the functional material.

The manufacturing method of the display device according to the embodiment includes a step of self-aligning the light emitting device inside the opening of the planarization layer overlapping the first assembly wiring and the second assembly wiring, a step of sequentially forming a conductive layer and an organic layer on a planarization layer and a light emitting device, a step of ashing the organic layer to remove the second part on the first part of the organic layer, and a step of forming a contact electrode by etching the conductive layer corresponding to the second part, wherein the contact electrode is in contact with the side of the first semiconductor layer below the light emitting device.

The present application provides a display panel and a manufacturing method thereof, the manufacturing method comprises: providing a first substrate, wherein a side of the first substrate is provided with a plurality of Micro-LED chips that are spaced apart from each other; providing a second substrate, wherein a surface on a side of the second substrate has a plurality of conductive layer parts; forming an isolation layer on the second substrate, wherein the isolation layer has a plurality of opening groups, each of the opening groups comprises a first opening and a second opening to expose a surface of one of the conductive layer parts, wherein a width of the first opening is greater than that of a P-type electrode, and a width of the second opening is greater than that of a N-type electrode; forming a first bonding layer in the first opening and forming a second bonding layer in the second opening; while supporting the chip body by the isolation layer, bonding the P-type electrode with the first bonding layer and simultaneously bonding the N-type electrode with the second bonding layer, wherein the P-type electrode is embedded into the first bonding layer and the N-type electrode is embedded into the second bonding layer.

A light sensor structure and a packaging method thereof are disclosed. The light sensor structure comprises a light emitting element, a light sensing element, an opaque molding substance, an insulation layer and a connection layer. The opaque molding substance encloses the light emitting element and the light sensing element, and the opaque molding substance is provided with a via. The insulation layer is disposed on the bottom surface of the light emitting element, and the insulation layer is provided with a number of connection pads on a side away from the light emitting element and the light sensing element. The connection pads are electrically connected to the contacts on the bottom surface of the light emitting element through the connection layer, and the connection pads are electrically connected to the contacts on the light sensing surface of the light sensing element through the connection layer and the via.