The present invention is applicable to the technical field of display devices and relates to a display device which uses, for example, a light-emitting diode (LED). To achieve the aforementioned objective, the present invention comprises: a wiring board; a light-emitting element which is composed of individual pixels and arranged on the wiring board; an insulation layer which is located at least on a side surface of the light-emitting element; and a black-colored layer which is located on the insulation layer, wherein the black-colored layer may include a material formed by modifying the material constituting the insulation layer.

A display device comprising a variable-wavelength light emitting diode (LED) is provided. The variable-wavelength LED comprises: an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and the p-doped portion. The light emitting region comprises a light-emitting layer which emits light at a peak emission wavelength under electrical bias thereacross. The variable-wavelength LED is configured to receive a power supply, and the peak emission wavelength of the LED is continuously controllable over an emission wavelength range of at least 40 nm by varying the power supply.

A display device includes a first epitaxial structure vertically stacked, a first light emitting element including a second epitaxial structure and a third epitaxial structure, a second light emitting element spaced apart from the first light emitting element and including the first epitaxial structure, a first passivation layer arranged to surround a sidewall of the first light emitting element, and a second passivation layer arranged to surround a sidewall of the second light emitting element. Each of the first epitaxial structure, the second epitaxial structure, and the third epitaxial structure may include a structure in which a first semiconductor layer of a first conductivity type, a carrier blocking layer, an active layer, and a second semiconductor layer of a second conductivity type are sequentially stacked.

Disclosed are an LED having a multi-series junction structure and improved light characteristics and a method of manufacturing the same. An LED includes a substrate, a buffer layer deposited on the substrate, a first n type semiconductor layer, a first active layer, and a first p type semiconductor layer sequentially deposited on the buffer layer, a tunnel junction layer deposited on the p type semiconductor layer, a second n type semiconductor layer, a second active layer, and a second p type semiconductor layer sequentially deposited on the tunnel junction layer, ITO formed on the second p type semiconductor layer, and a passivation layer deposited on the side or front of the first n type semiconductor layer to the ITO. Etching is performed from the ITO to one location of the first n type semiconductor layer so that the ITO to the first n type semiconductor layer have a mesa structure.

A semiconductor chip includes a first semiconductor die, a second semiconductor die, a filling layer, a transparent conductive layer and a reflective layer. The second semiconductor die is disposed on the first semiconductor die and electrically connected to the first semiconductor die. The filling layer surrounds a sidewall of the first semiconductor die and a sidewall of the second semiconductor die. The transparent conductive layer is disposed on the second semiconductor die and the filling layer and electrically connected to the second semiconductor die. The reflective layer is disposed on a sidewall of the filling layer.

A light emitting device for a display including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, electrode pads disposed below the first LED sub-unit, and a planarization layer disposed between the first and second LED sub-units and being light transmissive, in which the electrode pads include a common electrode pad electrically connected in common to the first, second, and third LED sub-units, first, second, and third electrode pads connected to the first, second, and third LED sub-units, respectively, the first, second, and third LED sub-units are independently drivable, light generated in the first LED sub-unit is configured to be emitted to the outside through the second and third LED sub-units, and light generated in the second LED sub-unit is configured to be emitted to the outside through the third LED sub-unit.

A method for producing a light emitting element, includes: forming, over a substrate, an n-type layer; forming, over the n-type layer, a first active layer; forming, over the first active layer, a first intermediate layer; forming, over the first intermediate layer, a second active layer having a band gap energy different from the first active layer; forming a first groove having a depth reaching the first intermediate layer from a side of the second active layer; forming a p-type layer containing a p-type Group III nitride semiconductor over the second active layer, over a bottom surface of the first groove, and over a side surface of the first groove; and etching the p-type layer in a vicinity of a region that connects a region over the second active layer and a region over the bottom surface of the first groove to form a first recessed portion.

A vertical light-emitting diode package structure includes a first structural layer, a second structural layer and a third structural layer. The second structural layer is connected to the first structural layer. The third structural layer is connected to the second structural layer to make the second structural layer be arranged between the first structural layer and the third structural layer. The first structural layer includes a first substrate and a first light-emitting element. The second structural layer includes a second substrate and a second light-emitting element. The third structural layer includes a third substrate and a third light-emitting element. The first light-emitting element, the second light-emitting element and the third light-emitting element are respectively disposed on the upper surfaces of the first substrate, the second substrate and the third substrate.

The present invention relates to a vertically stacked LEDoS micro display panel and a manufacturing method therefor, in which an engineering monolithic epitaxy wafer is used when bonding a front wafer and a back wafer to each other, thus making a process for aligning an LED laminate with a CMOS electrode pad unnecessary, and at the same time, each LED laminate emits only light of a specific color, thus making a color filter unnecessary.

The present invention relates to a vertically-laminated microdisplay panel requiring no color filter, the panel comprising: a back wafer, the top surface of which has multiple CMOS electrode pads aligned thereon; multiple LED laminates, each of which includes multiple light emitting units and multiple bonding layers vertically laminated on the back wafer, and which are aligned on the multiple CMOS electrode pads, respectively; and a common electrode formed on the multiple LED laminates, wherein each of the multiple LED laminates emits only a particular color by having a short passage formed through at least one light emitting unit among the multiple light emitting units to bypass current so as to prevent the current from being injected into the light emitting unit.