The present invention is a wafer having a micro-LED structure, the wafer including a starting substrate, a mask formed on the starting substrate and having a mask pattern including an opening, and a plurality of epitaxial layer structures, each of the plurality of structures selectively grown on a portion corresponding to the opening of the mask pattern on the starting substrate, in which each of the plurality of the epitaxial layer structures has a pyramid-shape or a truncated pyramid-shape surrounded by {111} planes, the plurality of epitaxial layer structures includes a first structure, as a light-emitting device portion, and a second structure connected to the first structure, and a polarity of an electrode of the first structure is different from that of an electrode of the second structure, and the first structure and the second structure constitute a micro-LED structure operable as one micro-LED. Thereby, the wafer having a micro-LED structure, in which generation of brightness decrease is suppressed, can be provided.

A quantum dot material includes a quantum dot body and a ligand material coordinately bonded to the quantum dot body. The quantum dot material further includes a cross-linking agent, and the cross-linking agent includes at least two diazonaphthoquinone units. Each of the at least two diazonaphthoquinone units is configured to undergo a photochemical reaction under irradiation to generate a carbene intermediate; the ligand material is configured to be bonded to the carbene intermediate through an addition reaction to form a cross-linked quantum dot material.

In an embodiment a method for manufacturing a plurality of optoelectronic semiconductor chips includes providing a growth surface with a plurality of LED areas, which are separated from each other by reflector areas, epitaxial growing epitaxial semiconductor columns on the growth surface, epitaxial coalescing the epitaxial semiconductor columns so that a closed semiconductor surface is formed, epitaxial growing an active semiconductor layer on or over the closed semiconductor surface, wherein the active semiconductor layer is configured to generate electromagnetic radiation and removing the active semiconductor layer over the reflector areas such that a plurality of active semiconductor areas is generated over the LED areas.

In an embodiment an optoelectronic component includes a plurality of active regions configured to produce electromagnetic radiation, wherein the active regions are laterally arranged next to each other and spaced from each other, wherein the plurality of active regions comprises at least one first-type active region and at least one second-type active region, which are based on the same semiconductor material system and have different bandgaps in order to produce different electromagnetic radiations, wherein the first-type active region is laterally surrounded by a first-type mask and the second-type active region is laterally surrounded by a second-type mask, wherein the masks are of different materials, and wherein the materials of the masks are selected from SiO.sub.2, SiN, TiO, TiN, or Al.sub.2O.sub.3.

Light emitting nanowire devices, in accordance with aspects of the present technology, can include a short period superlattice (SPSL) region underlaying an N-polar multiple quantum well (MQW) region. The short period superlattice (SPSL) region can relax strain in the multiple quantum well (MQW) region. The nanowires can be submicron scale and characterized by red electroluminescence.

A curable composition including (A) a semiconductor nanorod, (B) a photopolymerizable monomer including a compound having an unsaturated carbon-carbon double bond, (C) a photopolymerization initiator including a compound of a specific structure, and (D) a solvent, a film manufactured using the same, and a display device including the film are provided.

An optoelectronic device including one or a plurality of light-emitting diodes, each light-emitting diode including a three-dimensional semiconductor element, an active area resting on the three-dimensional semiconductor element and a stack of semiconductor layers covering the active area, the active area including a plurality of quantum wells, said stack being in mechanical contact with a plurality of quantum wells.

A light-emitting element includes a substrate; a conductive member disposed on the substrate; a first insulating layer disposed on the conductive member; a semiconductor structure comprising a first light-emitting unit and a second light-emitting unit on the first insulating layer, each comprising a first semiconductor layer, a second semiconductor layer, and a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer; first wiring electrically connected to the first semiconductor layer of the first light-emitting unit; second wiring electrically connected to the second semiconductor layer of the first light-emitting unit and the first semiconductor layer of the second light-emitting unit; third wiring electrically connected to the second semiconductor layer of the second light-emitting unit; and a pad electrode disposed above the substrate and spaced apart from the semiconductor structure in a plan view, the pad electrode being electrically connected to the first wiring.

The present application relates to the technical field of light-emitting diodes, and particularly relates to a flip-chip high-voltage light-emitting diode. The present application designs on one light-emitting unit a protruding part which faces the center position of the flip-chip high-voltage light-emitting diode, so that a vulnerable position of an isolation groove is prevented from being pressed against by an ejector pin, and meanwhile, a situation of electric leakage caused by film layer breakage is avoided, thereby improving reliability.

Devices and methods of manufacturing light emitting devices including selective area epitaxy deposited N-polar semiconductors. The devices and methods can be utilized to realize high-quality, high-performance and/or high-efficiency nanowire based light emitting devices.