A semiconductor light emitting device may be provided that reduces product defects of a light emitting device by including a distributed Bragg reflector disposed at an edge of a light emitting structure, while improving the luminous efficiency of the light emitting device.

A semiconductor light emitting device may be provided that reduces product defects of a light emitting device by including a distributed Bragg reflector disposed at an edge of a light emitting structure, while improving the luminous efficiency of the light emitting device.

A display element includes a first spacer, a second spacer, at least one first electrode, a second electrode, at least one LED structure, a reflective layer, a first transparent molding layer and a transparent conductive layer. The second spacer is located on one side of the first spacer. The first electrode is surrounded by the first spacer. The second electrode is surrounded by the second spacer. The LED structure is located on the first electrode. The reflective layer is located on a sidewall of the first spacer facing the LED structure. The first transparent molding layer is located on the reflective layer and surrounds the LED structure. The transparent conductive layer is located on the top surface of the second semiconductor layer and the top surface of the first transparent molding layer, and extends to the second electrode.

A micro light emitting diode (LED) structure, includes a mesa structure. The mesa structure further includes a first semiconductor layer having a first conductive type, a light emitting layer formed on the first semiconductor layer, a second semiconductor layer formed on the light emitting layer, the second semiconductor layer having a second conductive type different from the first conductive type. A top surface area of the second semiconductor layer is greater than each of: a bottom surface area of the first semiconductor layer, a top surface area of the first semiconductor layer, and a bottom surface area of the second semiconductor layer. The second semiconductor layer further includes a semiconductor region and an ion implantation region formed around the semiconductor region, the ion implantation region having a resistance higher than a resistance of the semiconductor region.

A light-emitting diode includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer, having an upper surface providing a first electrode area containing a pad area and an extended area; a transparent conductive layer over the first semiconductor layer having a first opening to expose a portion of a surface of the first semiconductor layer corresponding to the pad area; a protective layer over the transparent conductive layer having a second opening and a third opening respectively at positions corresponding to the pad area and the extended area, while exposing a portion of the surface of the first semiconductor layer corresponding to the pad area and a portion of a surface of the transparent conductive layer corresponding to the extended area; and a first electrode over the protective layer directly contacting the first semiconductor layer corresponding to the pad area via the first and second openings.

A unit pixel is provided. The unit pixel includes a transparent substrate, a first light blocking layer disposed on the transparent substrate and having windows that transmit light, an adhesive layer covering the first light blocking layer, a plurality of light emitting devices disposed on the adhesive layer to be arranged on the windows, and a second light blocking layer covering side surfaces of the light emitting devices.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly arrangements of lumiphoric materials within LED chips are disclosed. Lumiphoric materials are incorporated or otherwise embedded within LED chips. Embedded lumiphoric materials are provided so that at least some portions of light generated by active LED structures are subject to wavelength conversion before exiting LED chip surfaces. Lumiphoric materials may form dielectric and/or passivation layers between various chip structures, such as between active LED structures and internal reflective layers and/or electrical contacts. Internally converted light propagating within LED chips may pass back through active LED structures with reduced light absorption.

A micro-LED structure includes a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level from an edge of the second type conductive layer. An edge of the light emitting layer is aligned with an edge of the first type conductive layer. The edge of the first type conductive layer extends along the horizontal level away from the edge of the second type conductive layer.

The present invention provides a light emitting panel, which includes: a substrate, at least one light emitting element disposed on the substrate, and a reflective structure layer. The reflective structure layer includes a plurality of first microstructure units disposed on the substrate and distributed around the at least one light emitting element, and a plurality of second microstructure units disposed on and overlapping the first microstructure units. A spacing between adjacent first microstructure units among the first microstructure units is less than a spacing between adjacent second microstructure units among the second microstructure units.

A light-emitting element includes a semiconductor structure body, a light-transmissive conductive film, a light-transmissive insulating film provided with a plurality of first openings, and a light-reflective conductive film contacting the light-transmissive conductive film in the first openings. In a top view, the extending portions of a first semiconductor layer include end portions (the portion of the extending portion located closest to a side of a second outer peripheral portion), the light-transmissive conductive film includes outer edges facing the end portions of the extending portions in a second direction, respectively, the first openings are not located between a first outer peripheral portion and a first straight line passing through an outer edge closest to the second outer peripheral portion among the plurality of outer edges of the light-transmissive conductive film and extending in a first direction, and are located between the first straight line and the second outer peripheral portion.