In an embodiment an optoelectronic semiconductor component includes a first semiconductor layer of an n-conductivity type, the first semiconductor layer being of Al.sub.xGa.sub.1-xN composition, with 0.3x0.95, a second semiconductor layer of a p-conductivity type, an active zone between the first semiconductor layer and the second semiconductor layer, the active zone including a quantum well structure and an intermediate layer between the first semiconductor layer and the active zone, wherein the intermediate layer includes a semiconductor material of Al.sub.yGa.sub.1-yN composition, with x*1.05y1, and wherein the intermediate layer is located directly adjacent to the active zone.

Disclosed is a Light-Emitting Device-Thin Film Transistor (LED-TFT) integration structure, comprising a substrate comprising a light emitting area and a driving area; a metal reflective film formed on the substrate; a buffer layer formed on the metal reflective film; LED disposed in the light emitting area; a protective layer formed on the LED; a thin film transistor disposed in the driving area and configured to drive the LED; and an ohmic contact metal for electrically connecting a cathode of the LED with the metal reflective film, wherein the LED and the thin film transistor are integrally formed on the substrate.

A semiconductor heterostructure for an optoelectronic device with improved light emission is disclosed. The heterostructure can include a first semiconductor layer having a first index of refraction n1. A second semiconductor layer can be located over the first semiconductor layer. The second semiconductor layer can include a laminate of semiconductor sublayers having an effective index of refraction n2. A third semiconductor layer having a third index of refraction n3 can be located over the second semiconductor layer. The first index of refraction n1 is greater than the second index of refraction n2, which is greater than the third index of refraction n3.

A light emitting diode epitaxial structure (LEDES) based on an aluminum gallium nitride material and a manufacturing method thereof are described. The LEDES includes a first layer of n-type aluminum gallium nitride, an active layer comprising aluminum gallium nitride, a p-type aluminum gallium nitride, and a second layer of n-type aluminum gallium nitride disposed above the p-type aluminum gallium nitride along an epitaxial growth direction. An epitaxial layer comprising a gallium nitride layer is contained between an epitaxial layer of the p-type aluminum gallium nitride and an epitaxial layer of the second layer of n-type aluminum gallium nitride. The epitaxial layer comprising the gallium nitride layer has an energy band width smaller than those of the epitaxial layers of the p-type aluminum gallium nitride and the second layer of n-type aluminum gallium nitride. A coarsened structure exists on a surface of the second layer of n-type aluminum gallium nitride.

The present disclosure provides a driving substrate, a method for preparing the same, and a display device. The driving substrate includes: a base substrate; a stress buffer layer located on the base substrate; a plurality of first wirings located on a surface of the stress buffer layer away from the base substrate; a first insulating layer located on a surface of the first wiring away from the base substrate; a plurality of second wiring structures located on a surface of the first insulating layer away from the base substrate; a second insulating layer located on a surface of the second wiring structure away from the base substrate; an electronic element located on a surface of the second insulating layer away from the base substrate.

A device for facilitating emitting light is disclosed. Accordingly, the device may include at least one substrate, at least one first layer configured to be placed on the at least one substrate. Further, the at least one first layer may be an n-type nitride based semiconductor layer. At least one second layer configured to be placed on the at least one first layer. Further, the at least one second layer may be a nitride based semiconductor. At least one third layer configured to be placed on the at least one second layer. Further, the at least one third layer may be a p-type semiconductor layer. At least one fourth layer configured to be placed on the at least one third layer. Further, the at least one fourth layer may include at least one transparent electrode.

A thin film packaging structure includes a first inorganic packaging layer, an organic packaging layer provided at a side of the first inorganic packaging layer, a second inorganic packaging layer provided at a side of the organic packaging layer facing away from the first inorganic packaging layer, and at least one first inorganic adjusting layer. An oxygen content of the at least one first inorganic adjusting layer is greater than an oxygen content of the first inorganic packaging layer and/or the second inorganic packaging layer; the at least one first inorganic adjusting layer includes two first inorganic adjusting layers; one of the two first inorganic adjusting layers is provided between the organic packaging layer and the second inorganic packaging layer; and another one of the two first inorganic adjusting layers is provided on a side of the second inorganic packaging layer facing away from the organic packaging layer.

Discussed is a display device, including a substrate, a wiring electrode disposed on the substrate, a plurality of semiconductor light-emitting elements electrically connected to the wiring electrode, an anisotropic conductive layer disposed between the plurality of semiconductor light-emitting elements and formed of a mixture of conductive particles and an insulating material; and a buffer portion disposed on a lower surface of a semiconductor light-emitting element of the plurality of semiconductor light-emitting elements so as to allow the wiring electrode and the semiconductor light-emitting element to be spaced apart by a predetermined distance, and provided with at least one hole, wherein the mixture of the conductive particles and the insulating material is disposed inside the at least one hole, and the wiring electrode is electrically connected to the semiconductor light-emitting element through conductive particles disposed inside the at least one hole.

An alternating electric field-driven gallium nitride (GaN)-based nano-light-emitting diode (nanoLED) structure with an electric field enhancement effect is provided. The GaN-based nanoLED structure forms a nanopillar structure that runs through an indium tin oxide (ITO) layer, a p-type GaN layer, a multiple quantum well (MQW) active layer and an n-type GaN layer and reaches a GaN buffer layer; and the nanopillar structure has a cross-sectional area that is smallest at the MQW active layer and gradually increases towards two ends of a nanopillar, forming a pillar structure with a thin middle and two thick ends. The shape of the GaN-based nanopillar improves the electric field strength within the QW layer in the alternating electric field environment and increases the current density in the QW region of the nanopillar structure under current driving, forming strong electric field gain and current gain, thereby improving the luminous efficiency of the device.

The present disclosure provides a growth method and structure of LED epitaxy. The growth method of LED epitaxy comprises: providing a layer of substrate, wherein the substrate is an Al.sub.2O.sub.3 substrate or an Al.sub.2O.sub.3/SiO.sub.2 composite substrate; successively depositing and growing a SiC buffer layer and a u-GaN layer on the substrate; wherein the temperature used for depositing the SiC buffer layer is 6501550 degrees; the gas used for depositing the SiC buffer layer is a silicon source gas and a carbon source gas, a flow rate of the silicon source gas is 11000 sccm, and a flow rate of the carbon source gas is 11000 sccm; a gas carrier gas used for depositing the SiC buffer layer has a flow rate of 10500 slm; the SiC buffer layer is deposited at a pressure of 100700 torr; the SiC buffer layer is deposited for a thickness of 101000 A.