A semiconductor LED includes p-doped, n-doped, and active layers, and has anode and cathode electrical contacts. The p-doped layer has a refractive index of n.sub.P and a nonzero thickness less than 10.sub.0/n.sub.P. The LED is less than 30.sub.0/n.sub.P wide, and the anode electrical contact is in direct contact with only a central region of the p-doped layer that is separated from the LED side surfaces by more than .sub.0/2n.sub.P. The LED width, the separation of the anode contact from the LED side surface, and the p-doped layer thickness can result in one or more of (i) increased Purcell factor, (ii) increased extraction efficiency, (iii) increased overall light output efficiency, or (iv) narrowed light output angular distribution.

A light-emitting diode includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer, having an upper surface providing a first electrode area containing a pad area and an extended area; a transparent conductive layer over the first semiconductor layer having a first opening to expose a portion of a surface of the first semiconductor layer corresponding to the pad area; a protective layer over the transparent conductive layer having a second opening and a third opening respectively at positions corresponding to the pad area and the extended area, while exposing a portion of the surface of the first semiconductor layer corresponding to the pad area and a portion of a surface of the transparent conductive layer corresponding to the extended area; and a first electrode over the protective layer directly contacting the first semiconductor layer corresponding to the pad area via the first and second openings.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly arrangements of lumiphoric materials within LED chips are disclosed. Lumiphoric materials are incorporated or otherwise embedded within LED chips. Embedded lumiphoric materials are provided so that at least some portions of light generated by active LED structures are subject to wavelength conversion before exiting LED chip surfaces. Lumiphoric materials may form dielectric and/or passivation layers between various chip structures, such as between active LED structures and internal reflective layers and/or electrical contacts. Internally converted light propagating within LED chips may pass back through active LED structures with reduced light absorption.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly current injection structures for LED chips are disclosed. Current injection structures include integrated layers or materials with high work functions as part of contact structures for epitaxial layers of active LED structures. Exemplary structures provide high work function contact layers for p-type epitaxial layers to enhance hole mobility and transport. Further contact structures include combinations of high work function layers with other current spreading layers. Exemplary materials for high work function layers include transition metal oxides.

The presented devices and methods are directed to efficient and effective photon emission. In one embodiment, high-performance tunnel junction deep ultraviolet (UV) light-emitting diodes (LEDs) are created using plasma-assisted molecular beam epitaxy. The device heterostructure was grown under slightly Ga-rich conditions to promote the formation of nanoscale clusters in the active region. The nanoscale clusters can act as charge containment configurations. In one exemplary implementation, a device operates at approximately 255 nm light emission with a maximum external quantum efficiency (EPE) of 7.2% and wall-plug efficiency (WPE) of 4%, which are nearly one to two orders of magnitude higher than previously reported tunnel junction devices operating at this wavelength. The devices exhibit highly stable emission originating from highly localized carriers in Ga-rich regions formed in the active region, with nearly constant emission peak with increasing current density up to 200 A/cm.sup.2, due to the strong charge carrier confinement related to the presence of nanoclusters (e.g., Ga-rich) and radiative emission originating from highly localized carriers in Ga-rich regions formed in the active region

A micro light-emitting device includes a semiconductor epitaxial structure having a bottom surface and a top surface opposite to each other, and including a first cladding layer, an active layer, and a second cladding layer disposed sequentially in such order in a direction from the bottom surface to the top surface. At least one of the first and second cladding layers has a super-lattice structure. The super-lattice structure of the first cladding layer includes first sublayers and second sublayers stacked alternately. Each first sublayer includes Al.sub.x1Ga.sub.1-x1InP, and each second sublayer includes Al.sub.x2Ga.sub.1-x2InP, where 0<x1<x21. The super-lattice structure of the second cladding layer including third sublayers and fourth sublayers stacked alternately. Each third sublayer includes Al.sub.z1Ga.sub.1-z1InP, and each fourth sublayer includes Al.sub.z2Ga.sub.1-z2InP, where 0<z1<z21.

An optoelectronic semiconductor device has a semiconductor body including a semiconductor layer sequence with an active region that generates radiation, a semiconductor layer and a further semiconductor layer, wherein the active region is arranged between the semiconductor layer and the further semiconductor layer, a current spreading layer is arranged on a radiation exit face of the semiconductor body, the current spreading layer connects electrically conductively with a contact structure for external electrical contacting of the semiconductor layer, in a plan view of the semiconductor device the current spreading layer adjoins the semiconductor layer in a connection region, and the current spreading layer includes a patterning with a plurality of recesses through which radiation exits the semiconductor device during operation.

Disclosed are a light emitting diode and a light emitting diode module. The light emitting diode module includes a printed circuit board and a light emitting diode joined thereto through a solder paste. The light emitting diode includes a first electrode pad electrically connected to a first conductive type semiconductor layer and a second electrode pad connected to a second conductive type semiconductor layer, wherein each of the first electrode pad and the second electrode pad includes at least five pairs of Ti/Ni layers or at least five pairs of Ti/Cr layers and the uppermost layer of Au. Thus a metal element such as Sn in the solder paste is prevented from diffusion so as to provide a reliable light emitting diode module.

A light emitting device includes a metal support structure comprising Cu; an adhesion structure on the metal support structure and comprising Au; a reflective conductive contact on the adhesion structure; a GaN-based semiconductor structure on the reflective conductive contact, the GaN-based semiconductor structure comprising a first-type GaN layer, an active layer, and a second-type GaN layer; a top interface layer on the GaN-based semiconductor structure and comprising Ti; and a contact pad on the top interface layer and comprising Au, wherein the GaN-based semiconductor structure is less than 1/20 thick of a thickness of the metal support structure.

A light-emitting device is provided. The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer. The light-emitting device further comprises a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the composition of the first sub-layer is with a different atomic ratio from that of the second sub-layer. A method for manufacturing the light-emitting device is also provided.