A nitride semiconductor light emitting element includes: an n-side semiconductor layer; a p-side semiconductor layer; an active layer positioned between the n-side semiconductor layer and the p-side semiconductor layer; and an electron blocking layer positioned between the p-side semiconductor layer and the active layer. The active layer includes, successively from the n-side semiconductor layer side: a first barrier layer containing Al, a first well layer that contains Al and emits ultraviolet light, a second barrier layer containing Al, and a second well layer that is in contact with the electron blocking layer, contains Al, and emits ultraviolet light. An Al composition ratio of the second well layer is higher than an Al composition ratio of the first well layer. A thickness of the second well layer is less than a thickness of the first well layer.

A light-emitting diode (LED) structure includes an active region that has at least one aluminum-containing quantum well (QW) stack that emits light from the LED structure when activated. The LED structure exhibits a modified internal quantum efficiency value, which is higher than a LED structure that does not include aluminum within a QW stack. The LED structure also exhibits a modified peak wavelength, which is longer than an unmodified peak wavelength of the unmodified LED structure.

A light-emitting diode manufacturing method including the forming of three-dimensional semiconductor elements, extending along parallel axes, made of a III-V compound, each having a lower portion and a flared upper portion inscribed within a frustum of half apical angle . The method further comprises, for each semiconductor element, the forming of an active area covering the top of the upper portion and the forming of at least one semiconductor layer of the III-V compound covering the active area by vapor deposition at a pressure lower than 10 mPa, by using a flux of the group-III element along a direction inclined by an angle III and a flux of the group-V element along a direction inclined by an angle V with respect to the vertical axis, angles III and V being smaller than angle .

A light emitting diode including a substrate having a first area and a second area defined by an isolation groove line, a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer, an active layer, a first electrode pad electrically connected to the lower semiconductor layer, a second electrode pad electrically connected to the upper semiconductor layer, and a connecting portion electrically connecting the semiconductor stack disposed in the first and second areas to each other, and including a first portion, a second portion, and a third portion extending from a second distal end of the first portion, in which the isolation groove line is disposed between the first and second electrode pads and exposes the substrate, the first portion extends along a first direction substantially parallel to an extending direction of the isolation groove line, and the second and third portions extend in a second direction crossing the first direction.

The present disclosure provides a growth method and structure of LED epitaxy. The growth method of LED epitaxy comprises: providing a layer of substrate, wherein the substrate is an Al.sub.2O.sub.3 substrate or an Al.sub.2O.sub.3/SiO.sub.2 composite substrate; successively depositing and growing a SiC buffer layer and a u-GaN layer on the substrate; wherein the temperature used for depositing the SiC buffer layer is 6501550 degrees; the gas used for depositing the SiC buffer layer is a silicon source gas and a carbon source gas, a flow rate of the silicon source gas is 11000 sccm, and a flow rate of the carbon source gas is 11000 sccm; a gas carrier gas used for depositing the SiC buffer layer has a flow rate of 10500 slm; the SiC buffer layer is deposited at a pressure of 100700 torr; the SiC buffer layer is deposited for a thickness of 101000 A.

A nitride semiconductor light-emitting element includes an n-type semiconductor layer, an active layer being formed on the n-type semiconductor layer and emitting ultraviolet light, an electron blocking layer formed on the active layer, and a p-type semiconductor layer formed on the electron blocking layer. A plurality of pits are formed at least in the active layer. A ratio R=D2/D1, which is a ratio of a second density D2 to a first density D1, is less than 30%, where the first density D1 is a density of the pits on an upper surface of the active layer and the second density D2 is a density of the pits on an upper surface of the electron blocking layer.

A light emitting element is provided. The light emitting element includes: a light emitting stack including an active layer between an N-type nitride semiconductor layer and a P-type nitride semiconductor layer, the light emitting stack having a width of 5 nm or more and 200 m or less; a first electrode connected to the N-type nitride semiconductor layer; and a second electrode connected to the P-type nitride semiconductor layer. The P-type nitride semiconductor layer has a first surface, adjacent to the active layer, and a second surface, opposite to the first surface, and includes Al.sub.xIn.sub.yGa.sub.zN (0x<1, 0y<1, 0<z1), and a bandgap of the p-type nitride semiconductor layer does not increase in a stacking direction from the second surface to the first surface. The N-type nitride semiconductor layer includes a superlattice layer and an electron retardation layer.

A diode array includes a substrate and a plurality of light emitting diodes disposed on the substrate and arranged in an array. Each of the light emitting diodes includes a stack of functional layers includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer located between the first semiconductor layer and the second semiconductor layer. At least one of the light emitting diodes includes a first current limiting region covering at least a portion of the first semiconductor layer, the light emitting layer or the second semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer, wherein the first electrode and the second electrode are disposed at the same side of the first semiconductor layer.

Provided are an ultraviolet light-emitting element that enables high light emission output and a method of producing the same. The light-emitting element (100) includes, in stated order: an n-type semiconductor layer (3) formed of Al.sub.xGa.sub.1-xN having an Al composition ratio x; a quantum well-type light-emitting layer (4); a p-type electron blocking layer (6) formed of Al.sub.yGa.sub.1-yN having an Al composition ratio y; a p-type cladding layer (7) formed of Al.sub.zGa.sub.1-zN having an Al composition ratio z; and a p-type GaN contact layer (8). The p-type electron blocking layer (6) has an Al composition ratio y of 0.35 to 0.45 and a thickness of 11 nm to 70 nm. The total thickness of the p-type electron blocking layer (6) and p-type cladding layer (7) is 73 nm to 100 nm. The thickness of the p-type GaN contact layer (8) is 5 nm to 15 nm.

This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element.