A display device includes a first electrode and a second electrode which are spaced apart from each other on a substrate. A light emitting element is disposed between the first electrode and the second electrode. A light emitting element core of the light emitting element includes a first semiconductor layer, a second semiconductor layer spaced apart from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer. A first element insulating layer surrounds a side surface of the light emitting element core. The first element insulating layer is an oxide insulating layer having a single crystalline structure.

The present disclosure provides techniques for epitaxial oxide materials, structures and devices. In some embodiments, an integrated circuit includes a field effect transistor (FET) and a waveguide coupled to the FET, wherein the waveguide comprises a signal conductor. The FET can include: a substrate comprising a first oxide material; an epitaxial semiconductor layer on the substrate, the epitaxial semiconductor layer comprising a second oxide material with a first bandgap; a gate layer on the epitaxial semiconductor layer, the gate layer comprising a third oxide material with a second bandgap, wherein the second bandgap is wider than the first bandgap; and electrical contacts. The electrical contacts can include: a source electrical contact coupled to the epitaxial semiconductor layer; a drain electrical contact coupled to the epitaxial semiconductor layer; and a first gate electrical contact coupled to the gate layer.

A substrate has a moth-eye nano pattern on a surface of the substrate in which cone-shaped protrusions are periodically formed, a first semiconductor layer on the moth-eye nano pattern and having a photonic crystal layer, an active layer on the first semiconductor layer and having a light-emitting layer, and a second semiconductor layer on the active layer.

Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.

Optical devices such as LEDs and lasers are discloses. The devices include a non-polar gallium nitride substrate member having an off-axis non-polar oriented crystalline surface plane. The off-axis non-polar oriented crystalline surface plane can be up to about 0.6 degrees in a c-plane direction and up to about 20 degrees in a c-plane direction in certain embodiments. In certain embodiments, a gallium nitride containing epitaxial layer is formed overlying the off-axis non-polar oriented crystalline surface plane. In certain embodiments, devices include a surface region overlying the gallium nitride epitaxial layer that is substantially free of hillocks.

High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm.sup.2.

A method of manufacturing a semiconductor substrate including forming a first layer on a substrate, patterning the first layer to form a plurality of patterns spaced apart from one another, forming a second layer on the patterns to cover each of the patterns, heat-treating the second layer to form cavities in the patterns between the second layer and the substrate, and growing the second layer covering the cavities.

An optoelectronic component and a method for the producing an optoelectronic component are disclosed. In an embodiment, the component comprises an active zone for generating electromagnetic radiation, wherein the active zone adjoins at least one layer arrangement of a semiconductor material, wherein the layer arrangement comprises at least two layers, wherein the two layers are formed in such a way that at an interface between the two layers a piezoelectric field is provided, the piezoelectric field configured to provide an electrical voltage drop at the interface, wherein a peak doping region is provided at the interface of the two layers in order to reduce the electrical voltage drop, wherein, in the direction away from the active zone, a doping of the peak doping region increases at least by a first percentage value and then decreases by at least a second percentage value, and wherein the first percentage value and the second percentage value are greater than 10% of a maximum doping of the peak doping region.

A p-type semiconductor layer includes a plurality of unit semiconductor layers, and each of the plurality of unit semiconductor layers includes a p-type nitride semiconductor whose main surface is a polar surface or a semi-polar surface. The nitride semiconductor constituting the unit semiconductor layer includes nitrogen and two or more elements, and each of the plurality of unit semiconductor layers has a composition changing in a stacking direction such that, for example, a lattice constant in a c-axis direction increases in a c-axis positive direction.

A p-type semiconductor layer includes a plurality of unit semiconductor layers, and each of the plurality of unit semiconductor layers includes a p-type nitride semiconductor whose main surface is a polar surface or a semi-polar surface. The nitride semiconductor constituting the unit semiconductor layer includes nitrogen and two or more elements, and each of the plurality of unit semiconductor layers has a composition changing in a stacking direction such that, for example, a lattice constant in a c-axis direction increases in a c-axis positive direction.