A light emitting diode, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; an ohmic contact layer disposed on the second type semiconductor layer; a first insulating layer disposed on the semiconductor structure and including a first opening overlapping the first type semiconductor layer and a second opening overlapping the ohmic contact layer; a first connection wiring disposed on the first insulating layer, the first connection wiring having a first portion and a second portion; and a second connection wiring disposed on the first insulating layer and spaced apart from the first connection wiring, the second connection wiring electrically connected to the second type semiconductor layer through the second opening. The second connection wiring surrounds at least a portion of the first portion of the first connection wiring in a plan view.

The present disclosure provides an optoelectronic semiconductor chip including a semiconductor layer sequence with an active layer for generating primary radiation and an angle-selective filter on a first side of the semiconductor layer sequence. During operation, the semiconductor chip emits radiation in the UV range. The angle-selective filter is configured to let pass only radiation that hits the filter in a predefined angular range.

A micro light emitting diode (LED) structure, includes a mesa structure. The mesa structure further includes a first semiconductor layer having a first conductive type, a light emitting layer formed on the first semiconductor layer, a second semiconductor layer formed on the light emitting layer, the second semiconductor layer having a second conductive type different from the first conductive type. A top surface area of the second semiconductor layer is greater than each of: a bottom surface area of the first semiconductor layer, a top surface area of the first semiconductor layer, and a bottom surface area of the second semiconductor layer. The second semiconductor layer further includes a semiconductor region and an ion implantation region formed around the semiconductor region, the ion implantation region having a resistance higher than a resistance of the semiconductor region.

Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

A light emitting element and a display device including the same are provided. The light emitting element includes: a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; a passivation layer surrounding an outer surface of at least one selected from the first semiconductor layer, the second semiconductor layer, and the active layer; and an insulation layer surrounding an outer surface of the passivation layer, wherein the passivation layer includes a two-dimensional (2D) material.

A micro-LED structure includes a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level from an edge of the second type conductive layer. An edge of the light emitting layer is aligned with an edge of the first type conductive layer. The edge of the first type conductive layer extends along the horizontal level away from the edge of the second type conductive layer.

A light emitting element includes a first surface corresponding to an end of the light emitting element, a second surface corresponding to another end of the light emitting element, a first semiconductor layer adjacent to the first surface, the first semiconductor layer including a first type of semiconductor, a second semiconductor layer adjacent to the second surface, the second semiconductor layer including a second type of semiconductor different from the first type of semiconductor, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. An area of the first surface is larger than an area of the second surface, and a distance between the first surface and the second surface is shorter than a length defined by the first surface.

A light emitting diode includes: a substrate; an epitaxial structure disposed on a surface of the substrate and including a first semiconductor layer, an active layer, and a second semiconductor layer sequentially disposed in a direction away from the substrate; a first electrode disposed on the first semiconductor layer; a second electrode disposed on the second semiconductor layer; and a first trench disposed on a surface of the second semiconductor layer away from the substrate, penetrating the active layer starting from the surface of the second semiconductor layer away from the substrate, and extending to a portion of the first semiconductor layer. In the disclosure, the arrangement of the trench is beneficial to the uniform distribution of the current, so that the brightness of light emission and reliability of a chip is improved.

A light emitting diode epitaxial structure (LEDES) based on an aluminum gallium nitride material and a manufacturing method thereof are described. The LEDES includes a first layer of n-type aluminum gallium nitride, an active layer comprising aluminum gallium nitride, a p-type aluminum gallium nitride, and a second layer of n-type aluminum gallium nitride disposed above the p-type aluminum gallium nitride along an epitaxial growth direction. An epitaxial layer comprising a gallium nitride layer is contained between an epitaxial layer of the p-type aluminum gallium nitride and an epitaxial layer of the second layer of n-type aluminum gallium nitride. The epitaxial layer comprising the gallium nitride layer has an energy band width smaller than those of the epitaxial layers of the p-type aluminum gallium nitride and the second layer of n-type aluminum gallium nitride. A coarsened structure exists on a surface of the second layer of n-type aluminum gallium nitride.

A light-emitting diode manufacturing method including the forming of three-dimensional semiconductor elements, extending along parallel axes, made of a III-V compound, each having a lower portion and a flared upper portion inscribed within a frustum of half apical angle . The method further comprises, for each semiconductor element, the forming of an active area covering the top of the upper portion and the forming of at least one semiconductor layer of the III-V compound covering the active area by vapor deposition at a pressure lower than 10 mPa, by using a flux of the group-III element along a direction inclined by an angle III and a flux of the group-V element along a direction inclined by an angle V with respect to the vertical axis, angles III and V being smaller than angle .