A quantum dot having a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the surface of the core, the shell including zinc, selenium, and sulfur. The quantum dot is configured to emit green light, the quantum dot does not include cadmium, and the quantum dot has a mole ratio Te:Se of tellurium relative to selenium of greater than about 0.05 and less than or equal to about 0.5:1. A method of producing the quantum dot and an electronic device including the same.

A device for facilitating emitting light is disclosed. Accordingly, the device may include at least one substrate, at least one first layer configured to be placed on the at least one substrate. Further, the at least one first layer may be an n-type nitride based semiconductor layer. At least one second layer configured to be placed on the at least one first layer. Further, the at least one second layer may be a nitride based semiconductor. At least one third layer configured to be placed on the at least one second layer. Further, the at least one third layer may be a p-type semiconductor layer. At least one fourth layer configured to be placed on the at least one third layer. Further, the at least one fourth layer may include at least one transparent electrode.

A method for manufacturing a light emitting device can include providing a substrate, forming a first active layer including a first electrical polarity, forming a light emitting region, forming a second active layer including a second electrical polarity, and forming a first electrical contact layer. The light emitting region can emit light with a target wavelength between 200 nm and 300 nm. A plurality of mesas can be formed, where each mesa can include a portion of the first active layer, the light emitting region, the second active layer, and the first electrical contact layer. A mesa width of each mesa is smaller than twice a current spreading length of the light emitting device. In some cases, the current spreading length is from 400 nm to 5 microns. In some cases, a distance separating the mesas from 1 micron to 10 microns.

Various forms of Mg.sub.xGe.sub.1xO.sub.2x are disclosed, where an epitaxial layer comprises single crystal Mg.sub.xGe.sub.1xO.sub.2x, with x having a value of 0x<1, wherein the single crystal Mg.sub.xGe.sub.1xO.sub.2x has a crystal symmetry compatible with a substrate or with an underlying layer on which the single crystal Mg.sub.xGe.sub.1xO.sub.2x is grown. Semiconductor structures and devices comprising the epitaxial layer of Mg.sub.xGe.sub.1xO.sub.2x are disclosed, along with methods of making the epitaxial layers and semiconductor structures and devices.

A semiconductor nanoparticle, a method of preparing the semiconductor nanoparticle, and an electroluminescent device including the semiconductor nanoparticle. The method of preparing the semiconductor nanoparticle includes contacting a zinc precursor and a sulfur precursor in the presence of a first particle at a predetermined temperature to form a semiconductor nanocrystal layer containing zinc sulfide on the first particle, wherein the first particle includes a Group II-VI compound including zinc, selenium, and, optionally, tellurium, or the first particle includes a Group III-V compound including indium and phosphorus. The predetermined temperature includes (e.g., is) a temperature (e.g., a reaction temperature) of greater than 300 C. and less than or equal to about 380 C., and the sulfur precursor includes a thiol compound of C3 (e.g. C9) to C50 or a combination thereof.

In various embodiments, lighting systems include an electrically insulating carrier having a plurality of conductive elements disposed thereon and a light-emitting array. The light-emitting array is disposed over the carrier and includes a plurality of light-emitting diodes (LEDs) that each has at least two electrical contacts electrically connected to conductive elements by an electrical connection featuring solder.

To provide an illumination method and a light-emitting device which are capable of achieving, under an indoor illumination environment where illuminance is around 5000 lx or lower when performing detailed work and generally around 1500 lx or lower, a color appearance or an object appearance as perceived by a person, will be as natural, vivid, highly visible, and comfortable as though perceived outdoors in a high-illuminance environment, regardless of scores of various color rendition metric. Light emitted from the light-emitting device illuminates an object such that light measured at a position of the object satisfies specific requirements. A feature of the light-emitting device is that light emitted by the light-emitting device in a main radiant direction satisfies specific requirements.

A method for manufacturing a light emitting device includes preparing a light emitting element that includes a light transmissive substrate comprising a first main surface, a second main surface, and a side surface having a light transmitting part and a light absorbing part whose optical transmissivity is lower than that of the light transmitting part, and a semiconductor laminate that is provided to the first main surface of the light transmissive substrate, joining the light emitting element to an upper surface of a base body such that the base body is opposite to the side where the semiconductor laminate is provided, providing a support member that covers the side surface of the light emitting element and part of the base body, and removing the light absorbing part by thinning the light transmissive substrate from the second main surface side.

In various embodiments, lighting systems include an electrically insulating carrier having a plurality of conductive elements disposed thereon and a light-emitting array. The light-emitting array is disposed over the carrier and includes a plurality of light-emitting diodes (LEDs) that each has at least two electrical contacts electrically connected to conductive elements by a conductive adhesive.

The invention provides a light emitting semiconductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn.sub.1-xMg.sub.xO with 1-350 ppm Al, wherein x is in the range of 0<x0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.