A superlattice and method for forming that superlattice are disclosed. In particular, an engineered layered single crystal structure forming a superlattice is disclosed. The superlattice provides p-type or n-type conductivity, and comprises alternating host layers and impurity layers, wherein: the host layers consist essentially of a semiconductor material; and the impurity layers consist of a donor or acceptor material.

The present invention relates to a single-crystalline aluminum nitride wherein a carbon concentration is 110.sup.14 atoms/cm.sup.3 or more and less than 310.sup.17 atoms/cm.sup.3, a chlorine concentration is 110.sup.14 to 110.sup.17 atoms/cm.sup.3, and an absorption coefficient at 265 nm wavelength is 40 cm.sup.1 or less.

A method for manufacturing a light-emitting diode (LED) includes plural steps as follows. A first type semiconductor layer is formed. A second type semiconductor layer is formed on the first type semiconductor layer. An impurity is implanted into a first portion of the second type semiconductor layer. The concentration of the impurity present in the first portion of the second type semiconductor layer is greater than the concentration of the impurity present in a second portion of the second type semiconductor layer after the implanting, such that the resistivity of the first portion of the second type semiconductor layer is greater than the resistivity of the second portion of the second type semiconductor layer.

A superlattice and method for forming that superlattice are disclosed. In particular, an engineered layered single crystal structure forming a superlattice is disclosed. The superlattice provides p-type or n-type conductivity, and comprises alternating host layers and impurity layers, wherein: the host layers consist essentially of a semiconductor material; and the impurity layers consist essentially of a corresponding donor or acceptor material.

A white light-emitting device of the present invention includes a substrate (101); a diamond semiconductor layer (105) provided on the substrate (101), in which one or a plurality of p-type layers (102), a p-type or n-type layer (103), and one or a plurality of n-type layers (104) are laminated in this order from the substrate (101); a first electrode (106) provided on the layer (102) which injects an electric current; a second electrode (107) provided on the layer (104) which injects an electric current; and a fluorescent member (108) which coats a light emission extraction region of the surface of the diamond semiconductor layer.

The invention relates to an optoelectronic device and to the method for manufacturing same. The optoelectronic device (45), according to the invention includes, in particular: a semiconductor substrate (46) doped with a first type of conductivity; semiconductor contact pads (18) or a semiconductor layer on a surface (16) of the substrate which are/is respectively doped with a second type of conductivity that is the opposite of the first type; and semiconductor elements (24), each semiconductor element being in contact with a contact pad or with the layer.

A device including a first portion, a second portion, a first contact and a second contact, the first portion being made of a semiconductor having a first doping, the second portion being made of a semiconductor having a second doping different than the first, the first portion and the second portion forming a p/n junction including a depletion zone in the first portion, the contacts being configured so that when an electric voltage (V1) is applied between the contacts, a dimension of the depletion zone depends on a value of the electric voltage, an ionization energy being defined for dopants of the second portion. The device includes an emitter generating a radiation having an energy greater than the ionization energy and illuminating the second portion with the radiation.