A semiconductor LED includes p-doped, n-doped, and active layers, and has anode and cathode electrical contacts. The p-doped layer has a refractive index of n.sub.P and a nonzero thickness less than 10.sub.0/n.sub.P. The LED is less than 30.sub.0/n.sub.P wide, and the anode electrical contact is in direct contact with only a central region of the p-doped layer that is separated from the LED side surfaces by more than .sub.0/2n.sub.P. The LED width, the separation of the anode contact from the LED side surface, and the p-doped layer thickness can result in one or more of (i) increased Purcell factor, (ii) increased extraction efficiency, (iii) increased overall light output efficiency, or (iv) narrowed light output angular distribution.

A semiconductor LED includes p-doped, n-doped, and active layers, and has anode and cathode electrical contacts. The p-doped layer has a refractive index of n.sub.P and a nonzero thickness less than 10.sub.0/n.sub.P. The LED is less than 30.sub.0/n.sub.P wide, and the anode electrical contact is in direct contact with only a central region of the p-doped layer that is separated from the LED side surfaces by more than .sub.0/2n.sub.P. The LED width, the separation of the anode contact from the LED side surface, and the p-doped layer thickness can result in one or more of (i) increased Purcell factor, (ii) increased extraction efficiency, (iii) increased overall light output efficiency, or (iv) narrowed light output angular distribution.

A display element includes a first spacer, a second spacer, at least one first electrode, a second electrode, at least one LED structure, a reflective layer, a first transparent molding layer and a transparent conductive layer. The second spacer is located on one side of the first spacer. The first electrode is surrounded by the first spacer. The second electrode is surrounded by the second spacer. The LED structure is located on the first electrode. The reflective layer is located on a sidewall of the first spacer facing the LED structure. The first transparent molding layer is located on the reflective layer and surrounds the LED structure. The transparent conductive layer is located on the top surface of the second semiconductor layer and the top surface of the first transparent molding layer, and extends to the second electrode.

A semiconductor device is provided, which includes an epitaxial structure, a first contact electrode and a second contact electrode. The epitaxial structure includes a first semiconductor structure, a second semiconductor structure and an active region. The first semiconductor structure includes a first semiconductor contact layer. The second semiconductor structure includes a second semiconductor contact layer. The active region is located between the first semiconductor structure and the second semiconductor structure. The first contact electrode is located on the second semiconductor contact layer and directly contacts the first semiconductor contact layer. The second contact electrode is located on the second semiconductor contact layer and directly contacts the second semiconductor contact layer. The first semiconductor contact layer has a conductivity type of n-type and includes a first group III-V semiconductor material. The second semiconductor contact layer has a conductivity type of p-type and includes a second group III-V semiconductor material.

A light emitting display apparatus includes a substrate including a plurality of pixels each including an emission area; a light extraction pattern including a plurality of concave portions in the emission area; and a light emitting portion over the light extraction pattern, wherein at least one of the plurality of concave portions has a curvature of 0.217 m.sup.1 to 0.311 m.sup.1.

A display device and a method of fabricating a display device. The display device includes a substrate including an emission area and a subarea adjacent to the emission area, a bank disposed in the emission area of the substrate, a height difference compensation pattern disposed in the subarea of the substrate, a first electrode and a second electrode that are disposed on the bank, the first electrode and the second electrode being spaced apart from each other, and a light-emitting element disposed in the emission area, between the first electrode and the second electrode.

A light-emitting diode includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer, having an upper surface providing a first electrode area containing a pad area and an extended area; a transparent conductive layer over the first semiconductor layer having a first opening to expose a portion of a surface of the first semiconductor layer corresponding to the pad area; a protective layer over the transparent conductive layer having a second opening and a third opening respectively at positions corresponding to the pad area and the extended area, while exposing a portion of the surface of the first semiconductor layer corresponding to the pad area and a portion of a surface of the transparent conductive layer corresponding to the extended area; and a first electrode over the protective layer directly contacting the first semiconductor layer corresponding to the pad area via the first and second openings.

A micro light-emitting device includes an epitaxial structure, a first electrode, a second electrode, a first contact layer and a diffusion structure. The epitaxial structure includes a first-type semiconductor layer, an active layer and a second-type semiconductor layer stacked in sequence. The second-type semiconductor layer has an outer surface relatively away from the first-type semiconductor layer. The first and second electrodes are respectively disposed on the epitaxial structure and electrically connected to the first-type and the second-type semiconductor layers. The first contact layer is disposed between the first electrode and the first-type semiconductor layer. The diffusion structure is disposed on a side of the second-type semiconductor layer away from the first-type semiconductor layer. A conductivity of the diffusion structure is less than that of the second-type semiconductor layer. The outer surface of the second-type semiconductor layer exposes a lower surface of the diffusion structure away from the first-type semiconductor layer.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly arrangements of lumiphoric materials within LED chips are disclosed. Lumiphoric materials are incorporated or otherwise embedded within LED chips. Embedded lumiphoric materials are provided so that at least some portions of light generated by active LED structures are subject to wavelength conversion before exiting LED chip surfaces. Lumiphoric materials may form dielectric and/or passivation layers between various chip structures, such as between active LED structures and internal reflective layers and/or electrical contacts. Internally converted light propagating within LED chips may pass back through active LED structures with reduced light absorption.

A micro-LED structure includes a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level from an edge of the second type conductive layer. An edge of the light emitting layer is aligned with an edge of the first type conductive layer. The edge of the first type conductive layer extends along the horizontal level away from the edge of the second type conductive layer.